Ren Zhao-xing

Surface Modification of Nanometre Silicon Carbide Powder with Polystyrene by Inductively Coupled Plasma

An investigation was made into polystyrene (PS) grafted onto nanometre silicon carbide (SiC) particles. In our experiment, the grafting polymerization reaction was induced by a radio frequency (RF) inductively coupled plasma (ICP) treatment of the nanometre powder. FTIR (Fourier transform infrared spectrum) and XPS (X-ray photoelectron spectroscopy) results reveal that PS is grafted onto the surface of silicon carbide powder. An analysis is presented on the effectiveness of this approach as a function of plasma operating variables including the plasma treating power, treating time, and grafting reaction temperature and time.

Microstructure, Hardness and Corrosion Resistance of ZrN Films Prepared by Inductively Coupled Plasma Enhanced RF Magnetron Sputtering

ZrN films were deposited on Si(111) and M2 steel by inductively coupled plasma (ICP)-enhanced RF magnetron sputtering. The effect of ICP power on the microstructure, mechanical properties and corrosion resistance of ZrN films was investigated. When the ICP power is below 300 W, the ZrN films show a columnar structure. With the increase of ICP power, the texture coefficient (Tc) of the (111) plane, the nanohardness and elastic modulus of the films increase and reach the maximum at a power of 300 W. As the ICP Power exceeds 300 W, the films exhibit a ZrN and ZrNx mixed crystal structure without columnar grain while the nanohardness and elastic modulus of the films decrease. All the ZrN coated samples show a higher corrosion resistance than that of the bare M2 steel substrate in 3.5% NaCl electrolyte. The nanohardness and elastic modulus mostly depend on the crystalline structure and Tc of ZrN(111).

Effect of Frequency on Emission of XeI* Excimer in a Pulsed Dielectric Barrier Discharge

Emission spectra of XeI* excimers and ultraviolet intensity at 253 nm from a dielectric barrier discharge (DBD) lamp excited by a pulsed voltage were measured as functions of pressure, electrical power, and frequency. In the DBD lamp driven by a higher frequency voltage, a more intense emission of XeI* excimers with high efficiency at 253 nm was found. A diffuse discharge mode was observed at high xenon pressure (>1 atm) with an excessive iodine concentration in the DBD driven by a high frequency (60 kHz) voltage.

The Characteristics of Dielectric Barrier Discharge and its Influence on the Excimer XeCl* Emission

In this work, the influence of discharge modes on the excimer XeCl* emission (308 nm) has been studied by adding helium gas into the xenon and chlorine mixture. It is found that the transition from filament discharge to glow/filament-combined discharge leads to the decrease in excimer emission. We are the first one to use a flowing water film as an outer transparent electrode, and achieve a higher UV intensity, compared with the case by using a metal mesh as the outer electrode. The influence of the gas temperature both in the reactor Tg and in a discharge channel Tc on the excimer emission has been analyzed preliminarily. Finally, it has been expected that the replacement of chlorine gas Cl2 by another chlorine gas may reduce the heat generated in the discharge processes and give rise to the excimer XeCl* radiation.

UV Emission of Excimer XeCl* Excited in Dielectric Barrier Discharge by using Pulse Power Supply

A dielectric barrier discharge experimental setup, which is convenient to vary the gas parameters of the mixture of xenon and chlorine, has been established and used to generate UV emission (308 nm). The influences of the partial pressure of chlorine and the total gas pressure on the UV emission under different electric parameters of pulse power supply have been studied preliminarily.

Atmospheric Pressure Plasma Jet in Organic Solution: Spectra, Degradation Effects of Solution Flow Rate and Initial pH Value

The organic compounds of p-nitrophenol (PNP) solution was treated by the active species generated in a stirred reactor by an atmospheric pressure plasma jet (APPJ). The emission intensities of hydroxyl (OH), oxygen (O), nitric oxide (NO), hydrogen (H) and molecular (N2) were measured by optical emission spectroscopy (OES). The relations between the flow rates of the PNP solution and degradation, the degradation effects and initial pH value of the solution were also investigated. Experimental results show that there exist intense emissions of O (777.1 nm), N2 (337.1 nm), OH (306–310 nm) and NO band (200–290 nm) in the region of plasma. Given the treatment time and gas flow rate, the degradation increased as a function of discharge energy and solution flow rate, respectively. The solution flow rate for the most efficient degradation ranged from 1.414 m/s to 1.702 m/s, and contributed very little when it exceeded 2.199 m/s. This indicates the existence of diffusion-controlled reactions at a low solution flow rate and activation-controlled reactions at a high solution flow rate. Moreover, increasing or decreasing the initial pH value of neutral PNP solution (pH=5.95) could improve the degradation efficiency. Treated by APPJ, the PNP solutions with different initial pH values of 5.95, 7.47 and 2.78 turned more acidic in the end, while the neutral solution had the lowest degradation efficiency. This work clearly demonstrates the close coupling of active species, photolysis of ultraviolet, the organic solution flow rate and the initial pH value, and thus is helpful in the study of the mechanism and application of plasma in wastewater treatment.

Preparation and Analysis of Si3N4 Film

Microwave Electron Cyclotron Resonance (ECR) Plasma assisted Chemical Vapor Deposition (CVD) technology has been used to prepare Si3N4 films, which were analyzed by using infrared (IR) transmission spectroscopy and XPS. The analysis results show that with the increase of the deposition temperature, the H content decreases, and the densification of the film increases. When the temperature is up to 360 °C, the stoichiometrical rate of Si:N is close to 0.75. The protective property of Si3N4 films is also examined.

On the Characteristics of Coaxial-Type Microwave Excited Linear Plasma: a Simple Numerical Analysis

To unveil the characteristics and available propagation mechanism of coaxial-type microwave excited line-shape plasma, the effects of parameters including microwave power, working pressure, dielectric constant, and external magnetic field on the plasma distribution were numerically investigated by solving a coupled system of Maxwells equations and continuity equations. Numerical results indicate that high microwave power, relatively high working pressure, low dielectric constant, and shaped magnetic field profiles will help produce a high-density and uniform plasma source. Exciting both ends by microwave contributed to the high-density and uniform plasma source as well. Possible mechanisms were analyzed by using the polarization model of low temperature plasma. The generation and propagation processes of the line-shape plasma mainly depend on the interaction of three aspects, i.e. the transmitted part, penetration part and absorptive part of the electromagnetic field. The numerical results were qualitatively consistent with available experimental results from literature. More elaborate descriptions of the three aspects and corresponding interactions among them need to be investigated further to improve the properties of the line-shape plasma.

CRITERION OF ANISOTROPIC MODES AND REJECTION BAND IN A WAVEGUIDE FILLED WITH COLD MAGNETOACTIVE PLASMA

The dispersion equation characterizing quasi-static TE mode and the criterion for the existence of the anisotropic mode are derived. The characteristics of the rejection band and its bandwidth are investigated in comparison with the previous conclusion.

Microstructure and Mechanical Properties of CrN Films Deposited by Inductively Coupled Plasma Enhanced Radio Frequency Magnetron Sputtering

CrN films have been synthesized on Si(100) wafer by inductively coupled plasma (ICP)-enhanced radio frequency (RF) magnetron sputtering. The effects of ICP power on microstructure, crystal orientation, nanohardness and stress of the CrN films have been investigated. With the increase of ICP power, the current density at substrate increases and the films exhibit denser structure, while the DC self-bias of target and the deposition rate of films decrease. The films change from crystal structure to amorphous structure with the increase of ICP power. The measured nanohardness and the compressive stress of films reach the topmost at ICP power of 150 W and 200 W, respectively. The mechanical properties of films show strong dependence on the crystalline structure and the density influenced by the ICP power.