Ricardo J. Zednik

Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs

Biaxial and uniaxial strained silicon technologies are promising for enhancement of CMOS performance. However, the advantage of uniaxial/biaxial strain over biaxial/uniaxial strain in terms of carrier mobility is not clear, since biaxial and uniaxial strain effects on carrier mobility have not till date been directly compared. Furthermore, the carrier mobility under uniaxial strain has not been fully studied in terms of strain directions. On the other hand, in spite of the importance of ultrathin-body (UTB) SOI MOSFETs to suppress the short channel effects in sub-20-nm regime, strain effects in UTB MOSFETs with SOI thickness, T/sub SOI/, of less than 5nm have not be explored yet. In this report, biaxial and uniaxial strain effects on carrier mobility are systematically studied, for the fist time, utilizing externally applied mechanical stress. The biaxial and uniaxial strain effects in UTB MOSFETs with T/sub SOI/ of less than 5nm are also investigated, for the first time.

Analytical model of dynamic crack evolution in tempered and strengthened glass plates

Modern buildings and vehicles are increasingly employing tempered and strengthened glass plates as architectural and critical load-bearing structural components. Nevertheless, the fracture behavior of these components is only poorly understood and the literature is largely empirical or anecdotal. In this manuscript we implement a semi-static fracture mechanics-based model to describe the evolution of a single crack in tempered and strengthened glass plates. This analytical model applies to cracks driven by residual stress and to fracture origins located at the plate’s symmetry plane. The model was validated by comparing the branching length,

Power capacity from earcanal dynamic motion

R_{B}

Dynamic Piezoelectric Behavior of Lithium Niobate at High Temperature

RB, and the mirror radius,

Piezoelectric low frequency shear horizontal guided wave transduction

R_{m}

Mobile Ferroelastic Domain Walls in Nanocrystalline PZT Films: the Direct Piezoelectric Effect

Rm, computed, to mechanical tests conducted by the authors and results reported in the literature. Branching lengths and mirror radii were found to strongly correlate with the plate’s thickness,