Riccardo Comin

Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals

Large-crystal perovskite films The performance of organic-inorganic hybrid perovskite planar solar cells has steadily improved. One outstanding issue is that grain boundaries and defects in polycrystalline films degrade their output. Now, two studies report the growth of millimeter-scale single crystals. Nie et al. grew continuous, pinhole-free, thin iodochloride films with a hot-casting technique and report device efficiencies of 18%. Shi et al. used antisolvent vapor-assisted crystallization to grow millimeter-scale bromide and iodide cubic crystals with charge-carrier diffusion lengths exceeding 10 mm. Science, this issue p. 522, p. 519 Solution processing techniques enable the growth of high-quality, large-area perovskite crystals for solar cells. The fundamental properties and ultimate performance limits of organolead trihalide MAPbX3 (MA = CH3NH3+; X = Br– or I–) perovskites remain obscured by extensive disorder in polycrystalline MAPbX3 films. We report an antisolvent vapor-assisted crystallization approach that enables us to create sizable crack-free MAPbX3 single crystals with volumes exceeding 100 cubic millimeters. These large single crystals enabled a detailed characterization of their optical and charge transport characteristics. We observed exceptionally low trap-state densities on the order of 109 to 1010 per cubic centimeter in MAPbX3 single crystals (comparable to the best photovoltaic-quality silicon) and charge carrier diffusion lengths exceeding 10 micrometers. These results were validated with density functional theory calculations.

Homogeneously dispersed, multimetal oxygen-evolving catalysts

Modulating metal oxides The more difficult step in fuel cells and water electrolysis is the oxygen evolution reaction. The search for earth-abundant materials to replace noble metals for this reaction often turns to oxides of three-dimensional metals such as iron. Zhang et al. show that the applied voltages needed to drive this reaction are reduced for iron-cobalt oxides by the addition of tungsten. The addition of tungsten favorably modulates the electronic structure of the oxyhydroxide. A key development is to keep the metals well mixed and avoid the formation of separate phases. Science, this issue p. 333 The addition of tungsten to iron cobalt oxides lowers the overpotential required for the evolution of oxygen from water. Earth-abundant first-row (3d) transition metal–based catalysts have been developed for the oxygen-evolution reaction (OER); however, they operate at overpotentials substantially above thermodynamic requirements. Density functional theory suggested that non-3d high-valency metals such as tungsten can modulate 3d metal oxides, providing near-optimal adsorption energies for OER intermediates. We developed a room-temperature synthesis to produce gelled oxyhydroxides materials with an atomically homogeneous metal distribution. These gelled FeCoW oxyhydroxides exhibit the lowest overpotential (191 millivolts) reported at 10 milliamperes per square centimeter in alkaline electrolyte. The catalyst shows no evidence of degradation after more than 500 hours of operation. X-ray absorption and computational studies reveal a synergistic interplay between tungsten, iron, and cobalt in producing a favorable local coordination environment and electronic structure that enhance the energetics for OER.

Perovskite-fullerene hybrid materials suppress hysteresis in planar diodes

Solution-processed planar perovskite devices are highly desirable in a wide variety of optoelectronic applications; however, they are prone to hysteresis and current instabilities. Here we report the first perovskite–PCBM hybrid solid with significantly reduced hysteresis and recombination loss achieved in a single step. This new material displays an efficient electrically coupled microstructure: PCBM is homogeneously distributed throughout the film at perovskite grain boundaries. The PCBM passivates the key PbI3− antisite defects during the perovskite self-assembly, as revealed by theory and experiment. Photoluminescence transient spectroscopy proves that the PCBM phase promotes electron extraction. We showcase this mixed material in planar solar cells that feature low hysteresis and enhanced photovoltage. Using conductive AFM studies, we reveal the memristive properties of perovskite films. We close by positing that PCBM, by tying up both halide-rich antisites and unincorporated halides, reduces electric field-induced anion migration that may give rise to hysteresis and unstable diode behaviour.

Perovskite energy funnels for efficient light-emitting diodes

Organometal halide perovskites exhibit large bulk crystal domain sizes, rare traps, excellent mobilities and carriers that are free at room temperature-properties that support their excellent performance in charge-separating devices. In devices that rely on the forward injection of electrons and holes, such as light-emitting diodes (LEDs), excellent mobilities contribute to the efficient capture of non-equilibrium charge carriers by rare non-radiative centres. Moreover, the lack of bound excitons weakens the competition of desired radiative (over undesired non-radiative) recombination. Here we report a perovskite mixed material comprising a series of differently quantum-size-tuned grains that funnels photoexcitations to the lowest-bandgap light-emitter in the mixture. The materials function as charge carrier concentrators, ensuring that radiative recombination successfully outcompetes trapping and hence non-radiative recombination. We use the new material to build devices that exhibit an external quantum efficiency (EQE) of 8.8% and a radiance of 80 W sr-1 m-2. These represent the brightest and most efficient solution-processed near-infrared LEDs to date.

Materials Processing Routes to Trap-Free Halide Perovskites

Photovoltaic devices based on lead iodide perovskite films have seen rapid advancements, recently achieving an impressive 17.9% certified solar power conversion efficiency. Reports have consistently emphasized that the specific choice of growth conditions and chemical precursors is central to achieving superior performance from these materials; yet the roles and mechanisms underlying the selection of materials processing route is poorly understood. Here we show that films grown under iodine-rich conditions are prone to a high density of deep electronic traps (recombination centers), while the use of a chloride precursor avoids the formation of key defects (Pb atom substituted by I) responsible for short diffusion lengths and poor photovoltaic performance. Furthermore, the lowest-energy surfaces of perovskite crystals are found to be entirely trap-free, preserving both electron and hole delocalization to a remarkable degree, helping to account for explaining the success of polycrystalline perovskite films. We construct perovskite films from I-poor conditions using a lead acetate precursor, and our measurement of a long (600 ± 40 nm) diffusion length confirms this new picture of the importance of growth conditions.

Planar-integrated single-crystalline perovskite photodetectors

Hybrid perovskites are promising semiconductors for optoelectronic applications. However, they suffer from morphological disorder that limits their optoelectronic properties and, ultimately, device performance. Recently, perovskite single crystals have been shown to overcome this problem and exhibit impressive improvements: low trap density, low intrinsic carrier concentration, high mobility, and long diffusion length that outperform perovskite-based thin films. These characteristics make the material ideal for realizing photodetection that is simultaneously fast and sensitive; unfortunately, these macroscopic single crystals cannot be grown on a planar substrate, curtailing their potential for optoelectronic integration. Here we produce large-area planar-integrated films made up of large perovskite single crystals. These crystalline films exhibit mobility and diffusion length comparable with those of single crystals. Using this technique, we produced a high-performance light detector showing high gain (above 104 electrons per photon) and high gain-bandwidth product (above 108 Hz) relative to other perovskite-based optical sensors.

Charge Order Driven by Fermi-Arc Instability in Bi2Sr2−xLaxCuO6+δ

The understanding of the origin of superconductivity in cuprates has been hindered by the apparent diversity of intertwining electronic orders in these materials. We combined resonant x-ray scattering (REXS), scanning-tunneling microscopy (STM), and angle-resolved photoemission spectroscopy (ARPES) to observe a charge order that appears consistently in surface and bulk, and in momentum and real space within one cuprate family, Bi 2Sr 2−xLa xCuO 6+δ. The observed wave vectors rule out simple antinodal nesting in the single-particle limit but match well with a phenomenological model of a many-body instability of the Fermi arcs. Combined with earlier observations of electronic order in other cuprate families, these findings suggest the existence of a generic charge-ordered state in underdoped cuprates and uncover its intimate connection to the pseudogap regime. Surface and bulk measurements in bismuth-based cuprates agree and indicate a short-range charge order. [Also see Perspective by Morr] Copper-Oxide Superconductors Copper-oxide superconductors have a complex electronic structure. A charge density order has been observed in two cuprate families; however, it has been unclear whether such an order exists in Bi-based compounds (see the Perspective by Morr). Comin et al. (p. 390, published online 19 December) and da Silva Neto et al. (p. 393, published online 19 December) address this question in single-layer and double-layer Bibased cuprates, respectively. For both families of materials, surface measurements by scanning tunneling spectroscopy agree with bulk measurements obtained through resonant elastic x-ray scattering, which suggests the formation of short-range correlations that modulate the charge density of the carriers over a range of dopings. Thus, charge ordering may represent a common characteristic of the major cuprate families.

Ubiquitous Interplay Between Charge Ordering and High-Temperature Superconductivity in Cuprates

Besides superconductivity, copper-oxide high-temperature superconductors are susceptible to other types of ordering. We used scanning tunneling microscopy and resonant elastic x-ray scattering measurements to establish the formation of charge ordering in the high-temperature superconductor Bi2Sr2CaCu2O8+x. Depending on the hole concentration, the charge ordering in this system occurs with the same period as those found in Y-based or La-based cuprates and displays the analogous competition with superconductivity. These results indicate the similarity of charge organization competing with superconductivity across different families of cuprates. We observed this charge ordering to leave a distinct electron-hole asymmetric signature (and a broad resonance centered at +20 milli–electron volts) in spectroscopic measurements, indicating that it is likely related to the organization of holes in a doped Mott insulator. Surface and bulk measurements in bismuth-based cuprates agree and indicate a short-range charge order. [Also see Perspective by Morr] Copper-Oxide Superconductors Copper-oxide superconductors have a complex electronic structure. A charge density order has been observed in two cuprate families; however, it has been unclear whether such an order exists in Bi-based compounds (see the Perspective by Morr). Comin et al. (p. 390, published online 19 December) and da Silva Neto et al. (p. 393, published online 19 December) address this question in single-layer and double-layer Bibased cuprates, respectively. For both families of materials, surface measurements by scanning tunneling spectroscopy agree with bulk measurements obtained through resonant elastic x-ray scattering, which suggests the formation of short-range correlations that modulate the charge density of the carriers over a range of dopings. Thus, charge ordering may represent a common characteristic of the major cuprate families.

QUANTUM-DOT-IN-PEROVSKITE SOLIDS

Heteroepitaxy—atomically aligned growth of a crystalline film atop a different crystalline substrate—is the basis of electrically driven lasers, multijunction solar cells, and blue-light-emitting diodes. Crystalline coherence is preserved even when atomic identity is modulated, a fact that is the critical enabler of quantum wells, wires, and dots. The interfacial quality achieved as a result of heteroepitaxial growth allows new combinations of materials with complementary properties, which enables the design and realization of functionalities that are not available in the single-phase constituents. Here we show that organohalide perovskites and preformed colloidal quantum dots, combined in the solution phase, produce epitaxially aligned ‘dots-in-a-matrix’ crystals. Using transmission electron microscopy and electron diffraction, we reveal heterocrystals as large as about 60 nanometres and containing at least 20 mutually aligned dots that inherit the crystalline orientation of the perovskite matrix. The heterocrystals exhibit remarkable optoelectronic properties that are traceable to their atom-scale crystalline coherence: photoelectrons and holes generated in the larger-bandgap perovskites are transferred with 80% efficiency to become excitons in the quantum dot nanocrystals, which exploit the excellent photocarrier diffusion of perovskites to produce bright-light emission from infrared-bandgap quantum-tuned materials. By combining the electrical transport properties of the perovskite matrix with the high radiative efficiency of the quantum dots, we engineer a new platform to advance solution-processed infrared optoelectronics.

Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

A two-step ligand-exchange strategy is developed, in which the long-carbon- chain ligands on all-inorganic perovskite (CsPbX3 , X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-pair-capped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.