Richard L. Espinola

Raman amplification in ultrasmall silicon-on-insulator wire waveguides.

We measure stimulated Raman gain at 1550 nm in an ultrasmall SOI strip waveguide, cross-section of 0.098 microm2. We obtain signal amplification of up to 0.7 dB in the counter-propagating configuration for a sample length of 4.2 mm and using a diode pump at 1435 nm with powers of <30 mW. The Raman amplifier has a figure-of-merit (FOM) of 57.47 dB/cm/W. This work shows the feasibility of ultrasmall SOI waveguides for the development of SOI-based on-chip optical amplifiers and active photonic integrated circuits.

Fast and low-power thermooptic switch on thin silicon-on-insulator

We have designed and fabricated Mach-Zehnder interferometer thermooptic switches using a wafer-bonded thin-silicon-on-insulator materials system. The thermally switched devices use single-mode strip waveguides with dimensions 0.26/spl times/0.6 /spl mu/m/sup 2/, operating at a wavelength of /spl lambda/=1.55 /spl mu/m. Useful device characteristics include a low switching power, 50 mW, and a fast rise time of <3.5 /spl mu/s. These results demonstrate the potential of this high-index-contrast materials system for the design of fast and low-power thermooptic switches and as an active element in photonic integrated circuits.

C-band wavelength conversion in silicon photonic wire waveguides

We demonstrate C-band wavelength conversion in Si photonic-wire waveguides with submicron cross-section by means of nonresonant, nondegenerate four-wave mixing (FWM) using low-power, cw-laser sources. Our analysis shows that for these deeply scaled Si waveguides, FWM can be observed despite the large phase mismatch imposed by strong waveguide dispersion. The theoretical calculations agree well with proof-of-concept experiments. The nonresonant character of the FWM scheme employed allows to demonstrate frequency tuning of the idler from ~ 20 GHz to > 100 GHz thus covering several C-band DWDM channels.

Magneto-optical nonreciprocal phase shift in garnet/silicon-on-insulator waveguides

We demonstrate the integration of a single-crystal magneto-optical film onto thin silicon-on-insulator (SOI) waveguides by use of direct wafer bonding. Simulations show that the high confinement and asymmetric structure of SOI allows an enhancement of approximately 3x over the nonreciprocal phase shift achieved in previous designs; this value is confirmed by our measurements. Our structure will allow compact magneto-optical nonreciprocal devices, such as isolators, integrated on a silicon waveguiding platform.

A study of high-index-contrast 90 degree waveguide bend structures.

We present an evaluation of the parameters involved in designing low-loss right-angle waveguide bends based on a high index contrast materials system. We apply the finite difference time domain method (FDTD) to several two-dimensional bend structures and study the effects of varying the bend geometry. Such a study is relevant for the understanding of bend mechanisms and for the optimization and fabrication of high-density high-contrast integrated optical components. The study indicates that high bend transmission can be achieved with the addition of a low- Q resonant cavity; however, similar or even better performance can be achieved with a structure that combines a corner mirror with a phase retarder. The use of a double corner mirror structure is shown to further increase the bend transmission, with little increase in bend area.

Ultracompact corner-mirrors and T-branches in silicon-on-insulator

In this letter, we have designed and fabricated low-loss ultrasmall corner mirrors and T-branches on thin silicon-on-insulator material system. The measured performance of the devices agrees with simulations using finite-difference time-domain calculations. These devices demonstrate the potential of this high-refractive-index-contrast material system for high-density planar optical integrated circuits.

Active and passive imaging in the THz spectral region : phenomenology, dynamic range, modes, and illumination

The useful compromise between resolution and penetration power of the submillimeter or terahertz (THz) spectral region has long made it attractive for a variety of imaging applications. However, many of the demonstrations of imaging in this spectral region have used strategically oriented targets, especially favorable concealment materials, proximate imaging geometries, etc. This paper reports the results of studies aimed at better understanding the phenomenology of targets, the impact of this phenomenology on various active and passive imaging strategies, and most importantly, the development of imaging strategies that do not require the aforementioned special circumstances. Particular attention is paid to the relationship between active and passive images, especially with respect to how they interact with the illumination- and detector-mode structures of various imaging scenarios. It is concluded that the very large dynamic range that can be obtained with active single-mode systems (including focal-plane arrays) can be used in system designs to overcome the deleterious effects that result from the dominance of specular reflections in single-mode active systems as well as to strategically orient targets to obtain recognition. This will aid in the development of a much more robust and generally useful imaging technology in this spectral region.

Modeling the target acquisition performance of active imaging systems

Recent development of active imaging system technology in the defense and security community have driven the need for a theoretical understanding of its operation and performance in military applications such as target acquisition. In this paper, the modeling of active imaging systems, developed at the U.S. Army RDECOM CERDEC Night Vision & Electronic Sensors Directorate, is presented with particular emphasis on the impact of coherent effects such as speckle and atmospheric scintillation. Experimental results from human perception tests are in good agreement with the model results, validating the modeling of coherent effects as additional noise sources. Example trade studies on the design of a conceptual active imaging system to mitigate deleterious coherent effects are shown.

Spontaneous Raman scattering in ultrasmall silicon waveguides

We report spontaneous Raman scattering at 1550 nm in ultrasmall silicon-on-insulator (SOI) strip waveguides of 0.098-microm2 cross-sectional area. The submicrometer-scale dimensions provide tight optical confinement and, hence, highly efficient Raman scattering with milliwatt-level cw pump powers. The prospect of Raman amplification in such a deeply scaled-down waveguide device in the presence of various loss mechanisms, particularly free-carrier loss that arises from two-photon absorption, is discussed, and the feasibility of high-gain SOI-based fully integrated optical amplifiers is shown.

Comparison of tilted slit and tilted edge superresolution modulation transfer function techniques

With staring infrared sensors becoming more predominant, an increasing number of system Modulation Transfer Functions MTFs are being extracted from undersampled imagery. Contamination of the MTF measurement caused by aliasing must be avoided by using a su- perresolution technique. We compare differences in the utility of two of these techniques: the tilted edge technique, which is commonly used, and the tilted slit technique, which is not. While the tilted edge MTF measurement is taken for granted, the use of the tilted slit is both inno- vative and instructive. The differences between the two techniques are examined to determine their ability to successfully extract the MTF from an undersampled image without noise, with white noise, with fixed pat- tern noise, and with various angles of tilt. Ease of implementation is also considered. All things considered, the tilted edge technique is more eas- ily accomplished and gives superior results. The tilted slit technique, however, gives valuable insight into the nature of aliasing in the real world. It is shown to be an excellent tool by which the difficult concept of aliasing may be easily illustrated.