Rin Miyagawa

Influence of GaN column diameter on structural properties for InGaN nanocolumns grown on top of GaN nanocolumns

The influence of GaN column diameter DGaN on structural properties was systematically investigated for InGaN nanocolumns (NCs) grown on top of GaN NCs. We demonstrated a large critical layer thickness of above 400 nm for In0.3Ga0.7N/GaN NCs. The structural properties were changed at the boundary of DGaN=D0 (∼120 nm). Homogeneous InGaN NCs grew axially on the GaN NCs with DGaN≤D0, while InGaN-InGaN core-shell structures were spontaneously formed on the GaN NCs with DGaN>D0. These results can be explained by a growth system that minimizes the total strain energy of the NCs.

Spatial emission distribution and carrier recombination dynamics in regularly arrayed InGaN/GaN quantum structure nanocolumns

Emission mechanisms in regularly arrayed InGaN/GaN quantum structures on GaN nanocolumns were investigated, focusing on the spatial emission distribution at the nanocolumn tops and the carrier recombination dynamics. The double-peak emission originated from the dot- and well-like InGaN areas with different In compositions was observed. From the results regarding the spatial emission distribution, we proposed a simple analytical approach to evaluating the carrier recombination dynamics using the rate equations based on the two energy states. The considerable six lifetimes can be uniquely determined from the experimental results. Carrier transfer from the high- to the low-energy state is dominant at high temperatures, producing the increased total emission efficiency of the inner low-energy area. In addition, the internal quantum efficiency should not be simply discussed using only the integrated intensity ratio between low and room temperatures because of the carrier transfer from high- to low-energy states.