Rina Pandey

Effect of geometric lattice design on optical/electrical properties of transparent silver grid for organic solar cells

Silver (Ag) grid transparent electrode is one of the most promising transparent conducting electrodes (TCEs) to replace conventional indium tin oxide (ITO). We systematically investigate an effect of geometric lattice modifications on optical and electrical properties of Ag grid electrode. The reference Ag grid with 5 μm width and 100 μm pitch (duty of 0.05) prepared by conventional photo-lithography and lift-off processes shows the sheet resistance of 13.27 Ω/sq, transmittance of 81.1%, and resultant figure of merit (FOM) of 129.05. Three different modified Ag grid electrodes with stripe added-mesh (SAM), triangle-added mesh (TAM), and diagonal-added mesh (DAM) are suggested to improve optical and electrical properties. Although all three of SAM, TAM, and DAM Ag grid electrodes exhibit the lower transmittance values of about 72 - 77%, they showed much decreased sheet resistance of 6 - 8 Ω/sq. As a result, all of the lattice-modified Ag grid electrodes display significant improvement of FOM and the highest value of 171.14 is obtained from DAM Ag grid, which is comparable to that of conventional ITO electrode (175.46). Also, the feasibility of DAM Ag gird electrode for use in organic solar cell is confirmed by finite difference time domain (FDTD) simulations. Unlike a conventional ITO electrode, DAM Ag grid electrode can induce light scattering and trapping due to the diffuse transmission that compensates for the loss in optical transparency, resulting in comparable light absorption in the photo active layer of poly(3-hexylthiophene) (P3HT): [6,6]-phenyl-C61-butyric acid methyl ester (PC₆₀BM). P3HT:PC₆₀BM based OSCs with the DAM Ag grid electrode were fabricated, which also showed the potential for ITO-free transparent electrode.

Fabrication and surface plasmon coupling studies on the dielectric/Ag structure for transparent conducting electrode applications

The dielectric/Ag structures were fabricated on glass substrates using various metal oxides as dielectrics and their optical properties were studied through transmittance and ellipsometry measurements. The structures with 10 nm Ag film deposited on various metal oxides (Al2O3, ZrO2, SrTiO3, TiO2, CaCu3Ti4O12, WO3 and HfO2) of 30 nm showed enhancement in transmittance compared to bare Ag film in the visible region. This enhancement in transmittance was explained through suppression of surface plasmon coupling at the dielectric/Ag interface. The surface plasmon wave-vector (kSP) was calculated using the measured dielectric constants for the dielectric and Ag through ellipsometry and employed to analyze the transmittance data. The kSP/k0 and δSP values were estimated and used to interpret the enhanced visible transmittance for different dielectric/Ag structures.

Transparent Conducting Multilayer Electrode (GTO/Ag/GTO) Prepared by Radio-Frequency Sputtering for Organic Photovoltaic`s Cells

Abstract Indium free consisting of three alternating layers GTO/Ag/GTO has been fabricated by radio-frequency (RF) sputtering for the appli-cations as transparent conducting electrodes and the structural, electrical and optical properties of the gallium tin oxide (GTO) films werecarefully studied. The gallium tin oxide thin films deposited at room temperature are found to have an amorphous structure. Hall Effectmeasurements show a strong influence on the conductivity type where it changed from n-type to p-type at 700 o C. GTO/Ag/GTO mul-tilayer structured electrode with a few nm of Ag layer embedded is fabricated and show the optical transmittance of 86.48% in the vis-ible range (λ = 380~770 nm) and quite low electrical resistivity of ~10 -5 Ω cm. The resultant power conversion efficiency of 2.60%of the multilayer based OPV (GAG) is lower than that of the reference commercial ITO. GTO/Ag/GTO multilayer is a promising trans-parent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.Keywords: Transparent conductive oxide, Gallium Tin Oxide (GTO), RF Sputtering, Structural and optical Properties, Bulkhetero-junction Organic Photovoltaic’s Cells (BHJ-OPVs), and power conversion efficiency

Electrical and Optical Properties of Asymmetric Dielectric/Metal/Dielectric (D/M/D) Multilayer Electrode Prepared by Radio-Frequency Sputtering for Solar Cells

【Transparent and conductive multilayer thin films consisting of three alternating layers FZTO/Ag/

Fluorine doped zinc tin oxide multilayer transparent conducting Oxides for organic photovoltaic׳s Cells

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Nano-sized indium-free MTO/Ag/MTO transparent conducting electrode prepared by RF sputtering at room temperature for organic photovoltaic cells

have been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting oxides and the structural and optical properties of the resulting films were carefully studied. The single layer fluorine doped zinc tin oxide (FZTO) and tungsten oxide (

Structural and electrical properties of fluorine-doped zinc tin oxide thin films prepared by radio-frequency magnetron sputtering

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Highly transparent ZTO/Ag/ZTO multilayer electrode deposited by inline sputtering process for organic photovoltaic cells

) films grown at room temperature are found to have an amorphous structure. Multilayer structured electrode with a few nm Ag layer embedded in FZTO/Ag/

Performance enhancement in organic photovoltaic solar cells using iridium (Ir) ultra-thin surface modifier (USM)

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Study about the single and multilayer GTO/Ag/GTO transparent conducting electrode prepared by radio-frequency magnetron sputtering for conducting electrode of organic Photovoltaic`s cells

(FAW) was fabricated and showed the optical transmittance of 87.60 % in the visible range (