Rm Ranson

Intrinsic photoluminescence from low temperature deposited zinc oxide thin films as a function of laser and thermal annealing

An investigation into the modification of low temperature deposited ZnO thin films by different annealing processes has been undertaken using laser, thermal and rapid thermal annealing of 60 nm ZnO films deposited by high-target-utilization sputtering. Single-pulse laser annealing using a KrF excimer laser (λ = 248 nm) over a range of fluences up to 318 mJ cm−2 demonstrates controlled in-depth modification of internal film microstructure and luminescence properties without the film degradation produced by high temperature thermal and RTA processes. Photoluminescence (PL) properties show that the ratio of defect related deep level emission (DLE, 450–750 nm, 2.76–1.65 eV) to excitonic near band-edge emission (NBE at 381 nm, 3.26 eV) is directly correlated to processing parameters. Thermal and rapid thermal processing results in the evolution of a strong visible orange/red DLE PL (with peaks at 590 nm, 2.10 eV and 670 nm, 1.85 eV) dominated by defects related to excess oxygen. At higher temperatures, the appearance of a green/yellow emission (530 nm, 2.34 eV) indicates a transition of the dominant radiative transfer mechanism. In contrast, laser processing removes defect related DLE and produces films with intense NBE luminescence, correlated to the observed formation of large grains (25–40 nm).

Decay time characteristics of La2O2S:Eu and La2O2S:Tb for use within an optical sensor for human skin temperature measurement

We focus on the development of a remote temperature sensing technology, i.e., an optical laser-based sensor, using thermographic phosphors for medical applications, particularly within an electromagnetically hostile magnetic resonance imaging (MRI) environment. A MRI scanner uses a strong magnetic field and radio waves to generate images of the inside of the body. The quality of the image improves with increasing magnetic resonance; however, the drawback of applying a greater magnetic strength is the inducement of heat into the body tissue. Therefore, monitoring the patients temperature inside MRI is vital, but until now, a practical solution for temperature measurement did not exist. We show europium doped lanthanum oxysulphide (La(2)O(2)S:Eu) and terbium doped lanthanum oxysulphide (La(2)O(2)S:Tb) are both temperature sensitive to a low temperature range of 10-50 degrees C when under ultraviolet (UV) excitation. The emission spectra and decay time characteristics of these phosphors were demonstrated. The results indicate that La(2)O(2)S:Eu has a quenching rate of 13.7 m degrees C(-1) and 4 m degrees C(-1) at 512 nm and 538 nm, respectively. In addition, La(2)O(2)S:Tb has a lower quenching rate of 4.19 m degrees C(-1) at 548 nm due to its faster decay time.

P-169: Optimization of the Electrical and Optical Properties of Ink-Jet-Printed SnO(2):Sb using Thermal Annealing and Excimer-Laser Processing

Sb doped SnO2 has been formulated and inkjet printed onto borosilicate glass substrates. The resultant films have been post processed using traditional thermal annealing up to 440°C and laser processing with a KrF excimer laser (λ = 248nm). Sheet resistance values of 700Ω/□ have been achieved with thermal annealing, whilst transparency remains >85% in the visible region. As a result of laser processing significant decreases in sheet resistance of the inkjet printed layers have been demonstrated indicating the viability of inkjet printing onto flexible substrates. The optical transmittance of the laser processed films has been shown to remain >85%. Initial measurements indicate that thermal and laser post processes reduce surface roughness.

Transparent and Flexible Thin Film Electroluminescent Devices Using HiTUS Deposition and Laser Processing Fabrication

Highly transparent thin film electroluminescent structures offering excellent switch on characteristics, high luminance and large break-down voltages have been deposited onto glass and flexible polymeric materials with no substrate heating using high target utilization sputtering. Deposition of ZnS:Mn as the active light emitting layer and Y₂O₃, Al₂O₃, Ta₂O₅, and HfO₂ as dielectric materials arranged in single and multiple layer configurations were investigated. Devices incorporating Al₂O₃, HfO₂ quadruple layers demonstrate the highest attainable luminance at low threshold voltage. Single pulse excimer laser irradiation of the phosphor layer prior to deposition of the top dielectric layer enhanced the luminance of the devices. The devices fabricated on glass and polymeric substrates exhibited a maximum luminance of 500 and 450 cdm^-2 when driven at 270 VRMS and 220 VRMS, respectively, with a 1.0 kHz sine wave.