Robert A. de Groot

Anisotropy of the mobility of pentacene from frustration

The bandstructure of pentacene is calculated using first-principles density functional theory. A large anisotropy of the hole and electron effective masses within the molecular planes is found. The band dispersion of the HOMO and the LUMO is analyzed with the help of a tight-binding (TB) fit. The anisotropy is shown to be intimately related to the herringbone structure.

Band gap narrowing of SnS2 superstructures with improved hydrogen production

Transition metal sulfides exhibit chemical and physical properties that are of much scientific and technological interest and can largely be attributed to their covalent bonding of 3d electrons. Hierarchical structures of these materials are suited for a broad range of applications in energy storage, as biological scaffold, and as sensors. In this work, hierarchical SnS2 structures have been synthesized and show excellent photocatalytic performance for the production of H2 under blue light (450 nm) irradiation. A combination of high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy indicates the formation of layered SnS2/SnS superstructures with a lattice mismatch between the two alternating layers. This indicates the presence of S vacancies and results in a drastic decrease of the band gap by 0.3 eV compared to bulk SnS2. This strategy of self-narrowing of the band-gap demonstrates its great potential for the design of new materials with visible light reactivity. Finally, we have extended this strategy to the synthesis of other transition metal sulfides (Ni3S4, CuS, CuS@C, and FeS2) with similar hierarchical structures, which have potential applications such as supercapacitors and electrode materials for sodium/lithium ion batteries.

A solid-state NMR and DFT study of compositional modulations in AlxGa1-xAs

We have conducted (75)As and (69)Ga Nuclear Magnetic Resonance (NMR) experiments to investigate order/disorder in Al(x)Ga(1-x)As lift-off films with x∼ 0.297 and 0.489. We were able to identify all possible As(Al(n)Ga(4-n)) sites with n = 0-4 coordinations in (75)As NMR spectra using spin-echo experiments at 18.8 Tesla. This was achieved by employing high rf field strengths using a small solenoid coil and an NMR probe specifically designed for this purpose. Spectral deconvolution, using an evolutionary algorithm, complies with the absence of long-range order if a CuAu based order parameter is imposed. An unconstrained fit shows a deviation of the statistics imposed by this type of ordering. The occupational disorder in the Ga and Al positions is reflected in a distribution of the Electric Field Gradients (EFGs) experienced at the different arsenic sites. We established that this can be modelled by summing the effects of the first coordination sphere and a Czjzek type distribution resulting from the compositional variation in the Al/Ga sub-lattice in the higher coordination spheres. (69)Ga 3QMAS and nutation data exclude the presence of highly symmetric sites and also show a distribution in EFG. The experimentally obtained quadrupolar interactions are in good agreement with calculations based on Density Functional Theory (DFT). Using additivity of EFG tensors arising from distant charge perturbations, we could use DFT to model the EFG distributions of the n = 0-4 sites, reproducing the Czjzek and extended Czjzek distributions that were found experimentally. On the basis of these calculations we conclude that the (75)As quadrupolar interaction is sensitive to compositional modulations up to the 7th coordination shell in these systems.

Theoretical study of the stable radicals galvinoxyl, azagalvinoxyl and Wurster's blue perchlorate in the solid state

Calculations on crystalline organic radicals were performed to establish the ground states of these materials. These calculations show that the radicals may interact, depending on their orientation in the crystal structure. For galvinxoyl, a second structure is proposed which is similar to that of azagalvinoxyl, in which the radicals form pairs. This structure accounts for the anomalous magnetic properties of galvinoxyl at low temperatures.

Anionogenic Mixed Valency in KxBa1−xO2−δ

We have synthesized members of an isostructural solid solution series KxBa1-xO2-δ (x < 0.41, δ < 0.11) containing mixed-valent dioxygen anions. Synthesis in liquid ammonia solution allows a continuous range of compounds to be prepared. X-ray and neutron diffraction show that KxBa1-xO2-δ adopts the tetragonal rocksalt-derived structure of the end members KO2 and BaO2, without any structural phase transition down to 5 K, the lowest temperature studied here. We identify four oxygen-oxygen stretching modes above 750 cm(-1) in the measured Raman spectra, unlike the spectra of KO2 and BaO2 which both contain just a single mode. We use density functional theory calculations to show that the stretching modes in KxBa1-xO2-δ arise from in-phase and anti-phase coupling of the stretching of nearest-neighbor oxygen dimers when the valence state of the dimers lies between -1 and -2 because of mixed cation coordination. This coupling is a direct signature of a novel type of anionogenic mixed valency.

First-principles study of the optical properties ofMgxTi1−xH2

Thin films of MgxTi1-x show an optical black state upon hydrogenation. We calculate the dielectric function and the optical properties of MgxTi1-xH2, x=0.5, 0.75, and 0.875 using first-principles density-functional theory. We argue that the black state is an intrinsic property of these compounds, unlike similar optical phenomena observed in other metal hydride films. The structures of MgxTi1-xH2 are represented either by simple ordered or quasirandom structures. The density of states has a broad peak at the Fermi level, composed of Ti d states; hence, both interband and intraband transitions contribute to the optical response. Ordered structures have a plasma frequency of ~3 eV. The plasma frequency drops below 1 eV in disordered structures, which - as a result of interband transitions - then show a low reflection and considerable absorption in the energy range of 1-6 eV, i.e., a black state.

First-principles study of the optical properties of MgxTi1-xH2

Thin films of MgxTi1-x show an optical black state upon hydrogenation. We calculate the dielectric function and the optical properties of MgxTi1-xH2, x=0.5, 0.75, and 0.875 using first-principles density-functional theory. We argue that the black state is an intrinsic property of these compounds, unlike similar optical phenomena observed in other metal hydride films. The structures of MgxTi1-xH2 are represented either by simple ordered or quasirandom structures. The density of states has a broad peak at the Fermi level, composed of Ti d states; hence, both interband and intraband transitions contribute to the optical response. Ordered structures have a plasma frequency of ~3 eV. The plasma frequency drops below 1 eV in disordered structures, which - as a result of interband transitions - then show a low reflection and considerable absorption in the energy range of 1-6 eV, i.e., a black state.

Amorphous Semiconductors Studied by First-principles Simulations: Structure and Electronic Properties

Atomistic models of amorphous solids enable us to study properties that are difficult to address with experimental methods. We present a study of two amorphous semiconductors with a great technological importance, namely a- Si:H and a-SiN:H. We use first-principles density functional theory (DFT), i.e. the interatomic forces are derived from basic quantum mechanics, as only that provides accurate interactions between the atoms for a wide range of chemical environments (e.g. brought about by composition changes). This type of precision is necessary for obtaining the correct short range order. Our amorphous samples are prepared by a cooling from liquid approach. As DFT calculations are very demanding, typically only short simulations can be carried out. Therefore most studies suffer from a substantial amount of defects, making them less useful for modeling purposes. We varied the cooling rate during the thermalization process and found it has a considerable impact on the quality of the resulting structure. A rate of 0.02 K/fs proves to be sufficient to prepare realistic samples with low defect concentrations. To our knowledge these are the first calculations that are entirely based on first-principles and at the same time are able to produce defect-free samples. Because of the high computational load also the size of the systems has to remain modest. The samples of a-Si:H and a-SiN:H contain 72 and 110 atoms, respectively. To examine the convergence with cells size, we utilize a large cell of a-Si:H with a total of 243 atoms. As we obtain essentially the same structure as with the smaller sample, we conclude that the use of smaller cells is justified. Although creating structures without any defects is important, on the other hand a small number of defects can give valuable information about the structure and electronic properties of defects in a-Si:H and a-SiN:H. In our samples we observe the presence of both the dangling bond (undercoordinated atom) and the floating bond (over-coordinated atom). We relate structural defects to electronic defect states within the band gap. In a-SiN:H the silicon-silicon bonds induce states at the valence and conduction band edges, thus decreasing the band gap energy. This finding is in agreement with measurements of the optical band gap, where increasing the nitrogen content increases the band gap.