Robert F. Hainsey
Electro Scientific Industries, Inc.
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Publication
Featured researches published by Robert F. Hainsey.
International Congress on Applications of Lasers & Electro-Optics | 2006
Robert F. Hainsey; Andrew Hooper; Edward J. Swenson; Michael S. Nashner
Recent advances in fiber amplified lasers, modelocked technology, and harmonic conversion not only have enabled improvements in traditional micromachining applications but also have opened the door for laser processing in new areas. This paper will review recent work with UV diode-pumped solid state lasers, picosecond lasers and master oscillator fiber power amplifier systems in processing semiconductor, metal, dielectric and polymer materials for such diverse applications as memory repair, microfluidics, solar cells, and MEMS.Recent advances in fiber amplified lasers, modelocked technology, and harmonic conversion not only have enabled improvements in traditional micromachining applications but also have opened the door for laser processing in new areas. This paper will review recent work with UV diode-pumped solid state lasers, picosecond lasers and master oscillator fiber power amplifier systems in processing semiconductor, metal, dielectric and polymer materials for such diverse applications as memory repair, microfluidics, solar cells, and MEMS.
conference on lasers and electro optics | 2001
Brian W. Baird; Brady Nilsen; Robert F. Hainsey; Ho Wai Lo
Summary form only given. Fabrication of semiconductor memory devices, including dynamic random access memory (DRAM) and static random access memory (SRAM), relies upon laser repair. Laser repair of memory involves the single pulse severing of fuses to enable decoders to address redundant memory cells, thereby improving the wafer-level yield of useful die. The development of next generation memory devices, such as 1 gigabyte (GB) DRAM will utilize fuse sizes of less than 500 nm on link pitches of 1500 nm and smaller and utilize Cu and Al fuses. Current laser memory repair systems employ Q-switched diode-pumped Nd:YLF and Nd:YVO/sub 4/ lasers operating at 1.047 /spl mu/m and 1.343 /spl mu/m, respectively. Systems operating in the infrared are expected to encounter difficulty in repairing devices at this scale due to wavelength-induced spot size limitations. To overcome these difficulties, we have recently demonstrated the extension of laser memory repair to the ultraviolet region and at link severing rates as high as 20,000 Hz.
Archive | 2003
Yunlong Sun; Robert F. Hainsey; Lei Sun
Archive | 2004
Yunglong Sun; Robert F. Hainsey
Archive | 2010
Haibin Zhang; Glenn Simenson; Robert F. Hainsey; David Barsic; Jeffrey Howerton; Wayne Crowther; Patrick F. Leonard
Archive | 2004
Yunlong Sun; Liu Jinjiao; Richard S. Harris; Pradeep Subrahmanyan; Robert F. Hainsey; Weixiong Lu
Archive | 2008
Brian W. Baird; Clint Vandergiessen; Steve Swaringen; Robert F. Hainsey; Yunlong Sun; Kelly J. Bruland; Andrew Hooper
Archive | 2008
Brian W. Baird; Kelly J. Bruland; Robert F. Hainsey
Archive | 2003
Yunlong Sun; Edward J. Swenson; Richard S. Harris; Robert F. Hainsey; Lei Sun
Archive | 2005
Yunlong Sun; Richard S. Harris; Kelly J. Bruland; Robert F. Hainsey; Ho Wai Lo; Lei Sun