Robert K. Grubbs

Enhancement-mode double-top-gated metal-oxide-semiconductor nanostructures with tunable lateral geometry

We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb-blockade behavior showing single-period conductance oscillations that are consistent with a lithographically defined quantum dot is exhibited in several MOS quantum dots with an open-lateral quantum-dot geometry. Decreases in mobility and increases in charge defect densities (i.e., interface traps and fixed-oxide charge) are measured for critical process steps, and we correlate low disorder behavior with a quantitative defect density. This work provides quantitative guidance that has not been previously established about defect densities and their role in gated Si quantum dots. These devices make use of a double-layer gate stack in which many regions, including the critical gate oxide, were fabricated in a fully qualified complementary metal-oxide semiconductor facility.

Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots

Laterally coupled charge sensing of quantum dots is highly desirable because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double-top-gated metal-oxide-semiconductor system. The current through a point contact constriction integrated near a quantum dot shows sharp 2% changes corresponding to charge transitions between the dot and a nearby lead. We extract the coupling capacitance between the charge sensor and the quantum dot, and we show that it agrees well with a three-dimensional capacitance model of the integrated sensor and quantum dot system.

Near-infrared surface plasmon polariton dispersion control with hyperbolic metamaterials

We demonstrate experimentally signatures and dispersion control of surface plasmon polaritons from 1 to 1.8 µm using periodic multilayer metallo-dielectric hyperbolic metamaterials. The fabricated structures are comprised of smooth films with very low metal filling factor. The measured dispersion properties of these hyperbolic metamaterials agree well with calculations using transfer matrix, finite-difference time-domain, and effective medium approximation methods despite using only 2.5 periods. The enhancement factor in the local photonic density of states from the studied samples in the near-infrared wavelength region is determined to be 2.5-3.5. Development of this type of metamaterial is relevant to sub-wavelength imaging, spontaneous emission and thermophotovoltaic applications.

Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry

We present transport measurements of a tunable silicon metal-oxide semiconductor double quantum dot device with lateral geometry. The experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate voltages applied. Intriguingly, these gate voltages themselves are not symmetric. A comparison with numerical simulations indicates that the applied gate voltages serve to offset an intrinsic asymmetry in the physical device. We also show a transition from a large single dot to two well isolated coupled dots, where the central gate of the device is used to controllably tune the interdot coupling.

Excitation rate dependence of Auger recombination in silicon

This work reports on measurements of the Auger recombination coefficients in silicon wafers with pump-probe thermoreflectance techniques operating at two different excitation rates: 250 kHz (low repetition rate) and 80 MHz (high repetition rate). The different excitation frequencies give rise to different thermoreflectance signals in the Si samples, which is ascribed to the excited number density in the conduction band. In the low repetition rate case, the excited carriers recombine via Auger processes before the next pump excitation is absorbed. However, in the high repetition rate case, the rate in which the pump excitations are absorbed at the sample surface is higher than the Auger recombination rate, indicating that the excited carrier densities in the high repetition rate experiments are much higher than in the low repetition rate measurements even though the pump fluences are comparable. This is ascribed to pulse accumulation in the high repetition rate measurements, and is quantified with rate equ...

Thin and small form factor cells: Simulated behavior

Thin and small form factor cells have been researched lately by several research groups around the world due to possible lower assembly costs and reduced material consumption with higher efficiencies. Given the popularity of these devices, it is important to have detailed information about the behavior of these devices. Simulation of fabrication processes and device performance reveals some of the advantages and behavior of solar cells that are thin and small. Three main effects were studied: the effect of surface recombination on the optimum thickness, efficiency, and current density, the effect of contact distance on the efficiency for thin cells, and lastly the effect of surface recombination on the grams per Watt-peak. Results show that high efficiency can be obtained in thin devices if they are well-passivated and the distance between contacts is short. Furthermore, the ratio of grams per Watt-peak is greatly reduced as the device is thinned.

Transport spectroscopy of low disorder silicon tunnel barriers with and without Sb implants

We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The implanted device has resonances superposed on the PC transport indicative of transport through the Sb donors. We fit the differential conductance to a rectangular tunnel barrier model with a linear barrier height dependence on source-drain voltage and non-linear dependence on gate bias. Effects such as Fowler-Nordheim (FN) tunneling and image charge barrier lowering (ICBL) are considered. Barrier heights and widths are estimated for the entire range of relevant biases. The barrier heights at the locations of some of the resonances for the implanted tunnel barrier are between 15-20 meV, which are consistent with transport through shallow partially hybridized Sb donors. The dependence of width and barrier height on gate voltage is found to be linear over a wide range of gate bias in the split gate geometry but deviates considerably when the barrier becomes large and is not described completely by standard 1D models such as FN or ICBL effects.

Gas Permeation Measurements on Low Temperature Cofired Ceramics

Commercial low temperature cofired ceramic (LTCC) technology is established in microelectronics and microsystems packaging, multichip and radio frequency (RF) modules, and sensors. The ability to combine structural considerations with embedded traces and components using laminated glass-ceramic tapes has created solutions to unconventional packaging requirements of micro-electro-mechanical systems (MEMS) devices. Many MEMS devices such as resonators are very sensitive to pressure and require packaging in a vacuum environment. Attaining and maintaining desirable pressure levels in sealed vacuum packages requires knowledge of the permeation characteristics of the vacuum envelope and the sealing materials. An experimental system to measure the time dependent gas permeation through LTCC at temperatures from room temperature to 500°C has been developed. This system utilizes a membrane technique in which a gas is allowed to permeate through a test sample, held at a constant temperature, into a high vacuum chamb...

Dielectric properties of Zr-modified Pb(Mg1∕3Ta2∕3)O3 ceramic: Influence of pressure, biasing electric field, and B-site cationic order

The effects of hydrostatic pressure and biasing dc electric field on the relaxor dielectric response of samples of Pb[(Mg1∕3Ta2∕3)0.95Zr0.05]O3 with 12%, 15%, and 90% B-site cationic order were investigated. Qualitatively similar decreases in the amplitudes of the real part of the dielectric constant (e′) at both the peak temperatures (Tm) of the e′(T,ω) response in the high temperature phase, i.e., above Tm, are observed on increasing the three variables: pressure, biasing field, and B-site order - effects that are interpreted in terms of stiffening of the underlying soft ferroelectric mode of the lattice. Strong deviation of the frequency-independent e′(T) from the Curie-Weiss law above Tm, attributed to correlations among polar nanodomains, gives way to adherence to this law above the Burns temperature Td. This is the temperature where polar nanodomains first make their presence known. The evolution with decreasing temperature below Td of short-range order in the nanodomains is estimated from the e′(T)...