Roberto Modica

Sicilia—silicon carbide detectors for intense luminosity investigations and applications

Silicon carbide (SiC) is a compound semiconductor, which is considered as a possible alternative to silicon for particles and photons detection. Its characteristics make it very promising for the next generation of nuclear and particle physics experiments at high beam luminosity. Silicon Carbide detectors for Intense Luminosity Investigations and Applications (SiCILIA) is a project starting as a collaboration between the Italian National Institute of Nuclear Physics (INFN) and IMM-CNR, aiming at the realization of innovative detection systems based on SiC. In this paper, we discuss the main features of silicon carbide as a material and its potential application in the field of particles and photons detectors, the project structure and the strategies used for the prototype realization, and the first results concerning prototype production and their performance.

Ni2Si/4H-SiC Schottky Photodiodes for Ultraviolet Light Detection

Ultraviolet (UV) monitoring is of great interest in the healthcare field to prevent excessive UV exposure risks. In the last years silicon carbide (SiC) has emerged as a suitable material for the fabrication of UV detectors. In this paper we propose a 4H-SiC Schottky photodiode with a continuous very thin Ni2Si layer operating at 0V, properly designed for UV radiation monitoring.

LOCOS induced stress effects on SOI bipolar devices

The effects of thermal and intrinsic stress produced on SOI substrates by the field oxidation have been studied. Results of electrical and structural characterization obtained on SOI have been compared with standard bulk Si and a different structure has been adopted in order to reduce the induced stress.