Rodrigo B. Capaz

Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies

We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities, for a given defect density, strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all excitations, the D to G intensity ratio reaches a maximum for an interdefect distance ∼3 nm. Thus, a given ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dispersion with excitation energy solves this ambiguity.

Theory and Ab Initio Calculation of Radiative Lifetime of Excitons in Semiconducting Carbon Nanotubes

We present a theoretical analysis and first-principles calculation of the radiative lifetime of excitons in semiconducting carbon nanotubes. An intrinsic lifetime of the order of 10 ps is computed for the lowest optically active bright excitons. The intrinsic lifetime is, however, a rapid increasing function of the exciton momentum. Moreover, the electronic structure of the nanotubes dictates the existence of dark excitons near in energy to each bright exciton. Both effects strongly influence measured lifetime. Assuming a thermal occupation of bright and dark exciton bands, we find an effective lifetime of the order of 10 ns at room temperature, in good accord with recent experiments.

Diameter and chirality dependence of exciton properties in carbon nanotubes

We calculate the diameter and chirality dependences of the binding energies, sizes, and bright-dark splittings of excitons in semiconducting single-wall carbon nanotubes. Using results and insights from ab initio calculations, we employ a symmetry-based variational method within the effective-mass and envelope-function approximations using tight-binding wave functions. Binding energies and spatial extents show a leading dependence on diameter as

Raman study of ion-induced defects in N-layer graphene

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Theory of Magnetic Edge States in Chiral Graphene Nanoribbons

and

Tight-binding study of the influence of the strain on the electronic properties of InAs 'GaAs quantum dots

d

Electromechanical Effects in Carbon Nanotubes

, respectively, with chirality corrections providing a spread of roughly 20% with a strong family behavior. Bright-dark exciton splittings show a

Systematic determination of absolute absorption cross-section of individual carbon nanotubes

1∕{d}^{2}

Theory of sodium ordering in Na x Co O 2

leading dependence. We provide analytical expressions for the binding energies, sizes, and splittings that should be useful to guide future experiments.

Electric-field control and adiabatic evolution of shallow donor impurities in silicon

Raman scattering is used to study the effect of low energy (90 eV) Ar(+) ion bombardment in graphene samples as a function of the number of layers N. The evolution of the intensity ratio between the G band (1585 cm(-1)) and the disorder-induced D band (1345 cm(-1)) with ion fluence is determined for mono-, bi-, tri- and ∼50-layer graphene samples, providing a spectroscopy-based method to study the penetration of these low energy Ar(+) ions in AB Bernal stacked graphite, and how they affect the graphene sheets. The results clearly depend on the number of layers. We also analyze the evolution of the overall integrated Raman intensity and the integrated intensity for disorder-induced versus Raman-allowed peaks.