Is this you? Create Your Porfile
Avatar

Roesner Wolfgang

Infineon Technologies

Network

Latest external collaboration on country level. Dive into details by clicking on the dots.

Explore More

Hotspot

Dive into the research topics where Roesner Wolfgang is active.

Explore More

Publication

Featured researches published by Roesner Wolfgang.

Archive | 2000

Mehrkanal-mosfet und verfahren zu seiner herstellung

Roesner Wolfgang; Schulz Thomas; Risch Lothar; Franosch Martin

Archive | 2003

Steg-Feldeffekttransistor und Verfahren zum Herstellen eines Steg-Feldeffekttransistors

Roesner Wolfgang; Hofmann Franz; Kretz Johannes; Schulz Thomas

Archive | 2003

Verfahren zum Herstellen eines Doppel-Gate-Transistors

Luyken Johannes R; Hofmann Franz; Roesner Wolfgang

Archive | 2006

Verfahren zum Herstellen eines integrierten Schaltkreises und Substrat mit vergrabener Schicht

Luyken Richard Johannes; Roesner Wolfgang; Ilicali Guerkan

Archive | 2003

Filter construction has a passage opening for fluids, covered by two intersecting unidimensional and intersecting nano-structures at the carrier, composed of nano wires and/or nano tubes

Luyken Johannes R; Hofmann Franz; Roesner Wolfgang; Landgraf Erhard; Schulz Thomas

Archive | 2002

Storage arrangement comprises a storage unit having a cell with a storage element, and a writing/reading device having a probe tip which moves via the storage unit with a single electron transistor arranged on the front end of the probe tip

Hofmann Franz; Roesner Wolfgang; Luyken Johannes R; Hartwich Jessica

Archive | 2003

Vertikal-Impedanz-Sensor-Anordnung und Verfahren zum Herstellen einer Vertikal-Impedanz-Sensor-Anordnung

Hofmann Franz; Luyken Johannes R; Roesner Wolfgang

Archive | 2002

Anschlussfläche für sublithographische Halbleiterstrukturen und Verfahren zu deren Herstellung

Hartwich Jessica; Luyken Richard Johannes; Roesner Wolfgang; Schulz Thomas

Archive | 2002

Heterostructure component used in electronic devices comprises a single hetero-nanotube having regions made from nanotube materials having different energy band gaps value

Luyken Johannes R; Roesner Wolfgang; Hofmann Franz; Schulz Thomas

Archive | 2001

Verfahren zur Herstellung eines Vertikal-Halbleitertransistorbauelements und Vertikal-Halbleitertransistorbauelement

Schulz Thomas; Roesner Wolfgang; Franosch Martin; Schaefer Herbert; Risch Lothar; Aeugle Thomas

Explore More

Collaboration

Dive into the Roesner Wolfgang's collaboration.

Top Co-Authors
Avatar

Hofmann Franz

Infineon Technologies

View shared research outputs
Top Co-Authors
Avatar

Schulz Thomas

Infineon Technologies

View shared research outputs
Top Co-Authors
Avatar

Luyken Johannes R

Infineon Technologies

View shared research outputs
Top Co-Authors
Avatar

Hartwich Jessica

Infineon Technologies

View shared research outputs
Top Co-Authors
Avatar

Luyken Richard Johannes

Infineon Technologies

View shared research outputs
Top Co-Authors
Avatar

Risch Lothar

Infineon Technologies

View shared research outputs
Top Co-Authors
Avatar

Specht Michael

Infineon Technologies

View shared research outputs
Top Co-Authors
Avatar

Landgraf Erhard

Infineon Technologies

View shared research outputs
Top Co-Authors
Avatar

Franosch Martin

Infineon Technologies

View shared research outputs
Top Co-Authors
Avatar

Ilicali Guerkan

Infineon Technologies

View shared research outputs
Explore More
Researchain Logo
Decentralizing Knowledge