Rohini R. Kharade

Development of nanocoral-like Cd(SSe) thin films using an arrested precipitation technique and their application

Nanocrystalline cadmium sulfoselenide thin films have been synthesized using a self-organized arrested precipitation technique with different deposition times using triethanolamine as a complexing agent. Optical, structural, morphological and photoelectrochemical solar cell properties were investigated as a function of deposition time. A UV-Vis-NIR absorption study suggested a direct allowed transition type and the band gap energy decreased from 2.01 to 1.86 eV with the increase in deposition time. X-ray diffraction studies revealed that the thin films are nanocrystalline by nature with a pure hexagonal crystal structure and a calculated crystallite size of 51–68 nm. Field emission scanning electron microscopy demonstrated that the surface morphology was altered from nanoflakes to assorted nanoflakes–nanospheres and finally to a nanocoral-like morphology. X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy showed that the composition of the Cd(SSe) thin films was of good stoichiometry. Electrical conductivity and thermoelectric power measurements confirmed that the deposited films were n-type semiconductors. From J–V measurements, a highest photo-conversion efficiency of 0.57% was achieved. The significant boost in the PEC performance might be due to the improved crystallinity along with lower values of the grain boundary resistance, dislocation density and the microstrain of the Cd(SSe) thin films.

Simplistic construction of cadmium sulfoselenide thin films via a hybrid chemical process for enhanced photoelectrochemical performance

We have successfully synthesized cadmium sulfoselenide (Cd(S1−xSex)) thin films via a simplistic and promising self-organized chemical growth process for photoelectrochemical (PEC) application. The effects of bath composition on the optical, structural, morphological, and electrical properties and the photoelectrochemical performance of (Cd(S1−xSex)) thin films have been investigated. Deposited thin films were characterized using UV-Vis spectrophotometry, X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) with a selected area electron diffraction (SAED) pattern, field-emission scanning electron microscopy (FESEM) coupled with energy dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), electrical conductivity (EC) and thermoelectric power (TEP) measurement techniques. An optical absorption study showed that the maximum light absorption in the 630–720 nm wavelength range and the linear nature of absorption plots indicate that the transition is a direct allowed type. The optical band gap energy decreased from 2.13 to 1.71 eV with varying bath composition. The XRD study illustrated that deposited thin films are in the pure phase with a nanocrystalline nature. HRTEM images highlight the formation of clearly-defined, interconnected particle, which aggregated to form a well-grown custard apple-like morphology over the entire substrate and are in good accordance with FESEM micrographs. The SAED pattern shows a ring pattern indicating the nanocrystalline nature of the deposited thin film. The FESEM study demonstrated that the developed surface morphology is favorable for effectual light absorption in the solar spectrum. The XPS analysis specified the presence of Cd2+, S2− and Se2− elements in the deposited thin film. The EDS spectrum confirmed that thin film deposition occurs in a stoichiometric manner. From the EC measurement study, it was observed that electrical conductivity increases correspondingly for all thin films, indicating semiconducting behavior. TEP measurements established that Cd(S1−xSex) thin films are n-type in nature. Finally, the deposited thin films were tested for photoelectrochemical (PEC) application. The PEC study illustrated that (Cd(S0.2Se0.8)) thin film showed the highest power conversion efficiency (η) of 1.02% among reported values.

Langmuir–Blodgett self organized nanocrystalline tungsten oxide thin films for electrochromic performance

We explore a novel method to synthesize pebble-like nanocrystalline WO3 thin films for the first time by thermal decomposition of a multilayer Langmuir–Blodgett film of an octadecylamine–tungsten complex. The resulting film was thoroughly characterized by various characterization techniques. The electrochromic performance was evaluated in Li+ as a charge-balancing ion. The WO3 thin film displays a state-of-the-art performance with respect to optical modulation of 25.94% at λ630 nm with a very rapid coloration and bleaching time of 3.57 s and 3.14 s, respectively and a high coloration efficiency of 71.26 cm2 C−1. The excellent electrochromic performance can be attributed to the high size uniformity of WO3 nanoparticles, whose crystalline nature offer more active sites for Li+ diffusion and control the diffusion path length. Thus, the Langmuir–Blodgett WO3 film contributes to high energy conversion devices.

Synthesis and characterization of nanocrystalline MoBi2Te5 thin films for photoelectrode applications

Molybdenum bismuth telluride thin films have been prepared on clean glass substrate using arrested precipitation technique which is based on self-organized growth process. As deposited MoBi2Te5 thin films were dried in constant temperature oven at 110°C and further characterized for their optical, structural, morphological, compositional, and electrical analysis. Optical absorption spectra recorded in the wavelength range 300–800 nm showed band gap (E g) 1.44 eV. X-ray diffraction pattern and scanning electron microscopic images showed that MoBi2Te5 thin films are granular, nanocrystalline having rhombohedral structure. The compositional analysis showed close agreements in theoretical and experimental atomic percentages of Mo4+, Bi3+, and Te2− suggest that chemical formula MoBi2Te5 assigned to as deposited molybdenum bismuth telluride new material is confirmed. The electrical conductivity and thermoelectric power measurement showed that the films are semiconducting with n-type conduction. The fill factor and conversion efficiency was characterized by photoelectrochemical (PEC) technique. In this article, we report the optostructural, morphological, compositional, and electrical characteristics of nanocrystalline MoBi2Te5 thin films to check its suitability as photoelectrode in PEC cell.