Rolf Schaefer

Contactless probing of semiconductor dopant profile parameters by ir spectroscopy

The optical properties of arsenic‐implanted and annealed silicon in the infrared are investigated. A theory is fitted to transmittance and reflectance spectra. The fitted profile parameters are correlated with nonoptical measurement results. It is shown that infrared optical measurements offer the capability of probing nondestructively sheet resistance, electrically active dose, and surface concentration. Thus, it is a promising measurement technique for in‐line process control.

Comparison of characterization methods for As‐doped silicon

Silicon wafers implanted with arsenic doses from 1×1015 to 2×1016 As/cm2 were characterized with the following methods: four point probe, bevel and stain, secondary ion mass spectroscopy, spreading resistance, incremental sheet resistance, and infrared transmittance and reflectance. The results are compared and the capability of each method is discussed.