Romain G. Ladret

Nanopatterning and Hot Spot Modeling of YBCO Ultrathin Film Constrictions for THz Mixers

High-TC hot electron bolometers (HEB) are promising THz mixers due to their expected wide bandwidth, large mixing gain, and low intrinsic noise. To achieve this goal, 0.6-μm-size constrictions were patterned on YBaCuO-based, 10-40-nm-thick films grown on (100) MgO substrates, which as previously reported, exhibited good DC superconducting properties. In this paper, we have simulated the DC and mixer characteristics of YBaCuO HEBs with a hot spot model usually dedicated to low-TC devices. For a 100 nm × 100 nm × 10 nm constriction, the expected double sideband noise temperature TN is 2000 K for 5 μW local oscillator (LO) power (G = -13.5 dB conversion gain). For a larger (but more realistic according to YBaCuO aging effects) 600 nm × 1000 nm × 35 nm constriction, TN = 1300 K at 200 μW LO power (G = -12 dB). This approach is expected to allow optimizing the operation of the HEB constriction coupled to a THz planar antenna.

YBCO-Constriction Hot Spot Modeling: DC and RF Descriptions for HEB THz Mixer Noise Temperature and Conversion Gain

To investigate the THz mixing performance of YBCO hot electron bolometers (HEB), the influence of the local oscillator (LO) radiofrequency (RF) radiation has been considered in detail. As opposed to the usual hot spot modeling approach, where the LO power is assumed to be uniformly distributed over the HEB constriction length, a uniform RF current has been assumed. The local electron temperature-as obtained by solving the coupled electron and phonon thermal reservoir equations-could then be used to determine the local YBCO complex resistivity, hence the locally dissipated LO power. Besides, the use of a modified two-fluid description allowed to determine the RF-dependent temperature shift (~-1% THz-1) and broadening (~+20% THz-1) of the resistive transition. Finally, the impedance matching to the THz antenna was considered. For a typical constriction, the conversion loss and noise temperature TDSB were computed, with TDSB × exp(0.32f) behavior up to 2.5 THz.

High-Tc micro and nano-constrictions modeling: hot spot approach for DC characteristics and HEB THz mixer performance

High-TC hot electron bolometers (HEB) are promising THz mixers due to their expected wide bandwidth, large mixing gain, and low intrinsic noise. We have simulated the characteristics of YBaCuO HEBs with a hot spot model usually dedicated to low-TC phonon cooled devices. With respect to e.g., NbN, the high-TC specificities are mainly arising from the large values of YBaCuO phonon thermal conductivity, and the film to MgO substrate phonon escape time. The consequent effects on the electron temperature profiles along the YBaCuO constriction and the current voltage DC characteristics are considered. The conversion gain G and noise temperature TN were computed for two constriction dimensions. For a 100 nm long × 100 nm wide × 10 nm thick constriction at 9 microwatt local oscillator (LO) power, the expected double sideband (DSB) TN = 1520 K (G = −13.7 dB). For a larger (but more realistic according to YBaCuO aging effects) 400 nm long × 400 nm wide × 35 nm thick constriction, minimum TN = 1210 K DSB at 35 microwatt LO power (G = −13.1 dB).

Terahertz superconducting hot electron bolometers: technological issues and predicted mixer performance for Y-Ba-Cu-O devices

High-TC superconducting (HTS) hot electron bolometers (HEB) are promising THz mixers due to their large expected bandwidth and low local oscillator (LO) power requirements at 60-80 K operating temperature. To obtain HEB efficient mixing, it is mandatory to grow very thin high quality HTS films leading to good micro or nano-bolometer superconducting properties. The challenge for Y-Ba-Cu-O resides, however, in the chemical reactivity of the material and the related aging effects. Early HEB models described the device in terms of thermal reservoirs only, namely the electrons and the phonons of the superconductor. The electron-phonon interaction time, which drives the HEB mixer ultimate response, is 1-2 ps for Y-Ba-Cu-O, with an expected bandwidth close to 100 GHz. Recently, we introduced the hot spot model for Y-Ba-Cu-O HEBs, taking - more realistically - the spatial dependence of the electron temperature along the nano-bolometer (or constriction) length into account. From DC analysis, the I-V characteristics could be deduced. In this paper, we further consider a full description of the constriction impedance at THz frequencies, which allows to work out the mixer performance in terms of double sideband noise temperature TDSB and conversion gain G. For a constriction of technologically achievable dimensions, i.e., 400 nm long x 400 nm wide x 35 nm thick, minimum TDSB = 1900 K at 9 μW LO power, with G = -9.5 dB, is obtained at 400 GHz, assuming impedance matching with a selfcomplementary planar antenna.