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Dive into the research topics where Ronald A. Quinlan is active.

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Featured researches published by Ronald A. Quinlan.


Journal of Physics D | 2008

Defect formation in graphene nanosheets by acid treatment: an x-ray absorption spectroscopy and density functional theory study

V. A. Coleman; Ronny Knut; Olof Karis; Helena Grennberg; Ulf Jansson; Ronald A. Quinlan; Brian C. Holloway; Biplab Sanyal; Olle Eriksson

In-plane defects have been introduced into graphene nanosheets by treatment with hydrochloric acid. Acid treatment induces bond cleavage in the C–C network via electrophilic attack. These resultant vacancy sites will then undergo further reactions with the surrounding ambient to produce C–O and C–H bonds. A σ ∗ resonance at 287 eV in the carbon K-edge x-ray absorption spectra is observed with acid treatment and is assigned to C–O states. Theoretical modelling of a di-vacancy in a graphene bilayer reproduces all essential features of this resonance and in addition predicts a metallic conductivity of states around this vacancy. The possibility of engineering the properties of graphene via the routes explored here is an important step towards establishing strategies for building devices based on this material. (Some figures in this article are in colour only in the electronic version)


ACS Nano | 2014

Fast Response, Vertically Oriented Graphene Nanosheet Electric Double Layer Capacitors Synthesized from C2H2

Minzhen Cai; Ronald A. Outlaw; Ronald A. Quinlan; Dilshan Premathilake; Sue M. Butler; John R. Miller

The growth and electrical characteristics of vertically oriented graphene nanosheets grown by radio frequency plasma-enhanced chemical vapor deposition from C2H2 feedstock on nickel substrates and used as electrodes in symmetric electric double layer capacitors (EDLC) are presented. The nanosheets exhibited 2.7 times faster growth rate and much greater specific capacitance for a given growth time than CH4 synthesized films. Raman spectra showed that the intensity ratio of the D band to G band versus temperature initially decreased to a minimum value of 0.45 at a growth temperature of 750 °C, but increased rapidly with further temperature increase (1.15 at 850 °C). The AC specific capacitance at 120 Hz of these EDLC devices increased in a linear fashion with growth temperature, up to 265 μF/cm(2) (2 μm high film, 850 °C with 10 min growth). These devices exhibited ultrafast frequency response: the frequency response at -45° phase angle reached over 20 kHz. Consistent with the increase in D band to G band ratio, the morphology of the films became less vertical, less crystalline, and disordered at substrate temperatures of 800 °C and above. This deterioration in morphology resulted in an increase in graphene surface area and defect density, which, in turn, contributed to the increased capacitance, as well as a slight decrease in frequency response. The low equivalent series resistance varied from 0.07 to 0.08 Ω and was attributed to the significant carbon incorporation into the Ni substrate.


Journal of Physics D | 2010

Conductivity engineering of graphene by defect formation

S.H. M Jafri; Karel Carva; Erika Widenkvist; Tobias Blom; Biplab Sanyal; Jonas Fransson; Olle Eriksson; Ulf Jansson; Helena Grennberg; Olof Karis; Ronald A. Quinlan; Brian C. Holloway; Klaus Leifer

Transport measurements have revealed several exotic electronic properties of graphene. The possibility to influence the electronic structure and hence control the conductivity by adsorption or doping with adatoms is crucial in view of electronics applications. Here, we show that in contrast to expectation, the conductivity of graphene increases with increasing concentration of vacancy defects, by more than one order of magnitude. We obtain a pronounced enhancement of the conductivity after insertion of defects by both quantum mechanical transport calculations as well as experimental studies of carbon nano-sheets. Our finding is attributed to the defect induced mid-gap states, which create a region exhibiting metallic behaviour around the vacancy defects. The modification of the conductivity of graphene by the implementation of stable defects is crucial for the creation of electronic junctions in graphene-based electronics devices.


Journal of Physics D | 2009

Mild sonochemical exfoliation of bromine-intercalated graphite: a new route towards graphene

Erika Widenkvist; D. W. Boukhvalov; Stefano Rubino; Sultan Akhtar; Jun Lu; Ronald A. Quinlan; M. I. Katsnelson; Klaus Leifer; Helena Grennberg; Ulf Jansson

A method to produce suspensions of graphene sheets by combining solution-based bromine intercalation and mild sonochemical exfoliation is presented. Ultrasonic treatment of graphite in water leads ...


Applied Physics Letters | 2008

Uniform and enhanced field emission from chromium oxide coated carbon nanosheets

Kun Hou; Ronald A. Outlaw; Sigen Wang; Mingyao Zhu; Ronald A. Quinlan; Dennis M. Manos; Martin E. Kordesch; Uwe Arp; Brian C. Holloway

Carbon nanosheets, a two-dimensional carbon nanostructure, are promising electron cathode materials for applications in vacuum microelectronic devices. This letter demonstrates a simple approach to improve the spatial emission uniformity of carbon nanosheets by coating them with a chromium oxide thin film. Photoelectron emission microscopy observations and in situ field emission tests revealed that chromium oxide coated carbon nanosheets not only have spatial uniformity but also have coating thickness dependent field emission properties. For example, a coating thickness of ∼1.5nm gave a substantially greater field emission than as-grown nanosheets or other thickness coatings.


Journal of Vacuum Science & Technology B | 2011

Transfer of carbon nanosheet films to nongrowth, zero thermal budget substrates

Ronald A. Quinlan; Artjay Javier; Edward E. Foos; Leonard Buckley; Mingyao Zhu; Kun Hou; Erika Widenkvist; Martin Drees; Ulf Jansson; Brian C. Holloway

Carbon-based nanostructures and materials have become a popular subject of research due to their unique thermal, mechanical, electrical, and optical properties. For example, the strong C–C bonds of graphene-based systems allow for excellent thermal conduction at room temperature and the conjugation of the sp2 lattice enables extremely high electron mobility. However, the use of carbon nanostructures as a component in polymer composites, sensors, mirco-electro-mechanical systems, and both rigid and flexible electronics has been limited by several factors, including the incompatibility with standard photolithography techniques, the high temperatures required for the nanostructure growth, and the presence of—or complication—of removing noncarbon species. Here, the authors report on a novel method for the transfer of carbon nanosheets to a low or zero thermal budget substrate while maintaining their original morphology and electrical properties. Four-point probe measurements’ post-transfer shows the retention...


Journal of The Electrochemical Society | 2013

Thermal Stability of Li2O2 and Li2O for Li-Air Batteries: In Situ XRD and XPS Studies

Koffi P. C. Yao; David G. Kwabi; Ronald A. Quinlan; Azzam N. Mansour; Alexis Grimaud; Yueh-Lin Lee; Yi-Chun Lu; Yang Shao-Horn


Crystal Growth & Design | 2008

Synthesis of Nanostructured Tungsten Oxide Thin Films

Erika Widenkvist; Ronald A. Quinlan; Brian C. Holloway; Helena Grennberg; Ulf Jansson


Inorganica Chimica Acta | 2005

Convenient synthesis of copper (I) thiolates and related compounds

Lynda M. Nguyen; Megan E. Dellinger; Jeffrey T. Lee; Ronald A. Quinlan; Arnold L. Rheingold; Robert D. Pike


Polymer Degradation and Stability | 2003

Cone calorimetric study of copper-promoted smoke suppression and fire retardance of poly(vinyl chloride)

William H. Starnes; Robert D. Pike; Jenine R. Cole; Alexander S. Doyal; Edward J. Kimlin; Jeffrey T. Lee; Philip J. Murray; Ronald A. Quinlan; Jing Zhang

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Azzam N. Mansour

Naval Surface Warfare Center

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Yang Shao-Horn

Massachusetts Institute of Technology

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Yi-Chun Lu

The Chinese University of Hong Kong

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