Rosmalini Ab Kadir

Characterization of metal contacts for two-dimensional MoS2 nanoflakes

While layered materials are increasingly investigated for their potential in nanoelectronics, their functionality and efficiency depend on charge injection into the materials via metallic contacts. This work explores the characteristics of different metals (aluminium, tungsten, gold, and platinum) deposited on to nanostructured thin films made of two-dimensional (2D) MoS2 flakes. Metals are chosen based on their work functions relative to the electron affinity of MoS2. It is observed, and analytically verified that lower work functions of the contact metals lead to smaller Schottky barrier heights and consequently higher charge carrier injection through the contacts.

Anodized nanoporous WO3 Schottky contact structures for hydrogen and ethanol sensing

This paper reports the development of nanoporous tungsten trioxide (WO3) Schottky diode-based gas sensors. Nanoporous WO3 films were prepared by anodic oxidation of tungsten foil in ethylene glycol mixed with ammonium fluoride and a small amount of water. Anodization resulted in highly ordered WO3 films with a large surface-to-volume ratio. Utilizing these nanoporous structures, Schottky diode-based gas sensors were developed by depositing a platinum (Pt) catalytic contact and tested towards hydrogen gas and ethanol vapour. Analysis of the current–voltage characteristics and dynamic responses of the sensors indicated that these devices exhibited a larger voltage shift in the presence of hydrogen gas compared to ethanol vapour at an optimum operating temperature of 200 °C. The gas sensing mechanism was discussed, associating the response to the intercalating H+ species that are generated as a result of hydrogen and ethanol molecule breakdowns onto the Pt/WO3 contact and their spill over into nanoporous WO3.

Reduced impurity-driven defect states in anodized nanoporous Nb2O5: the possibility of improving performance of photoanodes.

Anodized nanoporous Nb2O5 films are synthesized using two different types of electrolyte compositions onto transparent conductive glasses and their impurities induced during the anodization process are assessed. These films are incorporated as photoanodes in dye sensitized solar cells (DSSCs). The one with no traces of impurity-driven defects exhibits higher current density and longer electron lifetimes, and consequently, an improvement in photoconversion efficiencies compared to the one that contains impurities.

TCAD process simulation for light effect improvement of ion sensitive field effect transistor

The conventional open gate ISFET sensor is normally very sensitive to light exposure which influences the sensor characteristics. In this study, different process conditions of ISFET were simulated using SILVACO TCAD in order to find the right doping profile which minimizes light effect. Various channels doping levels for ISFET sensor have been analyzed. Comparison with SRP samples was done in order to ensure the accuracy of the simulation output. Based on simulation results, the ISFETs were then fabricated and tested under the same intensities of light exposure and ambient temperatures. It shows that ISFET which underwent double PWELL implant and with deeper junction depth experiences lower light effect. This paper will discuss on how doping profiles affect ISFET performance with respect to light effect.