Ross M. Audet

Widely tunable single-mode quantum cascade laser source for mid-infrared spectroscopy

We demonstrate a compact, single-mode quantum cascade laser source continuously tunable between 8.7 and 9.4μm. The source consists of an array of single-mode distributed feedback quantum cascade lasers with closely spaced emission wavelengths fabricated monolithically on a single chip and driven by a microelectronic controller. Our source is suitable for a variety of chemical sensing applications. Here, we use it to perform absorption spectroscopy of fluids.

DFB Quantum Cascade Laser Arrays

DFB quantum cascade laser (DFB-QCL) arrays operating between 8.7 and 9.4 mum are investigated for their performance characteristics-single-mode selection of the DFB grating, and variability in threshold, slope efficiency, and output power of different lasers in the array. Single-mode selection refers to the ability to choose a desired mode/frequency of laser emission with a DFB grating. We apply a theoretical framework developed for general DFB gratings to analyze DFB-QCL arrays. We calculate how the performance characteristics of DFB-QCLs are affected by the coupling strength kappaL of the grating, and the relative position of the mirror facets at the ends of the laser cavity with respect to the grating. We discuss how single-mode selection can be improved by design. Several DFB-QCL arrays are fabricated and their performance examined. We achieve desired improvements in single-mode selection, and we observe the predicted variability in the threshold, slope efficiency, and output power of the DFB-QCLs. As a demonstration of potential applications, the DFB-QCL arrays are used to perform infrared absorption spectroscopy with fluids.

Single-mode laser action in quantum cascade lasers with spiral-shaped chaotic resonators

The authors have fabricated and characterized quantum cascade lasers with spiral-shaped microresonators. The lasers operate in pulsed mode at room temperature with peak optical power greater than 20mW and in continuous wave at temperatures up to 125K. They exhibit single-mode emission in both pulsed mode and continuous wave operation, with a 30dB side-mode suppression ratio at injection currents well above threshold. Subthreshold spectral measurements indicate that the spiral cavities support whispering-gallery-like modes. Single-mode lasing occurs on one of these modes. Far-field profiles reveal enhanced directionality compared to microdisk lasers.

Intra-cavity absorption spectroscopy with narrow-ridge microfluidic quantum cascade lasers

We demonstrate microfluidic laser intra-cavity absorption spectroscopy with mid-infrared lambda approximately 9mum quantum cascade lasers. A deepetched narrow ridge waveguide laser is placed in a microfluidic chamber. The evanescent tails of the laser mode penetrate into a liquid on both sides of the ridge. The absorption lines of the liquid modify the laser waveguide loss, resulting in significant changes in the laser emission spectrum and the threshold current. A volume of liquid as small as ~10pL may, in principle, be sufficient for sensing using the proposed technique. This method, similar to the related gas-phase technique, shows promise as a sensitive means of detecting chemicals in small volumes of solutions.

Nanoscale resonant-cavity-enhanced germanium photodetectors with lithographically defined spectral response for improved performance at telecommunications wavelengths.

We demonstrate planar resonant photodetectors based on germanium fins self-aligned to metallic slits. By varying the fin widths, we engineer detectors with tunable and extended spectral response spanning the telecommunications Cand L-bands.

Investigation of Limits to the Optical Performance of Asymmetric Fabry-Perot Electroabsorption Modulators

We have investigated the suitability of surface-normal asymmetric Fabry-Perot electroabsorption modulators for short-distance optical interconnections between silicon chips. These modulators should be made as small as possible to minimize device capacitance; however, size-dependent optical properties impose constraints on the dimensions. We have thus performed simulations that demonstrate how the optical performance of the modulators depends on both the spot size of the incident beam and the dimensions of the device. We also discuss the tolerance to nonidealities such as surface roughness and beam misalignment. The particular modulators considered here are structures based upon the quantum-confined Stark effect in Ge/GeSi quantum wells. We present device designs that have predicted extinction ratios greater than 7 dB and switching energies as low as 10 fF/bit, which suggests that these silicon-compatible devices can enable high interconnect bandwidths without the need for wavelength division multiplexing.

Angular emission characteristics of quantum cascade spiral microlasers

We perform ray and wave simulations of passive and active spiral-shaped optical microcavities, comparing our results to experimental data obtained with mid-infrared quantum cascade spiral microlasers. Focusing on the angular emission characteristics, we find that both ray and wave simulations are consistent with the experimental data, showing richly-featured, multidirectional far-field emission patterns in the case of uniform pumping and TM-polarized light. Active cavity simulations using the Schr odinger-Bloch model indicate that selective pumping of the quantum cascade spiral microlasers near the resonator boundary will yield unidirectional laser emission.

Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators

We demonstrate vertical-incidence electroabsorption modulators for free-space optical interconnects. The devices operate via the quantum-confined Stark effect in Ge/SiGe quantum wells grown on silicon substrates by reduced pressure chemical vapor deposition. The strong electroabsorption contrast enables use of a moderate-Q asymmetric Fabry-Perot resonant cavity, formed using a film transfer process, which allows for operation over a wide optical bandwidth without thermal tuning. Extinction ratios of 3.4 dB and 2.5 dB are obtained for 3 V and 1.5 V drive swings, respectively, with insertion loss less than 4.5 dB. For 60 ?m diameter devices, large signal modulation is demonstrated at 2 Gbps, and a 3 dB modulation bandwidth of 3.5 GHz is observed. These devices show promise for high-speed, low-energy operation given further miniaturization.

Surface-Normal Ge/SiGe Asymmetric Fabry–Perot Optical Modulators Fabricated on Silicon Substrates

We demonstrate the first vertical-incidence Ge/SiGe quantum well reflection modulators fabricated entirely on standard silicon substrates. These modulators could help enable massively parallel, free-space optical interconnects to silicon chips. An asymmetric Fabry-Perot resonant cavity is formed around the quantum well region by alkaline etching the backside of the Si substrate to leave suspended SiGe membranes, upon which high-index-contrast Bragg mirrors are deposited. Electroabsorption and electrorefraction both contribute to the reflectance modulation. The devices exhibit greater than 10 dB extinction ratio with low insertion loss of 1.3 dB. High-speed modulation with a 3 dB bandwidth of 4 GHz is demonstrated. The moderate-Q cavity (Q ~ 600) yields an operating bandwidth of more than 1 nm and permits operation without active thermal stabilization.

Si-Ge surface-normal asymmetric Fabry-Perot quantum-confined stark effect electroabsorption modulator

The strong electroabsorption modulation possible in Ge/SiGe quantum wells promises efficient, CMOS-compatible integrated optical modulators. Using an asymmetric Fabry-Perot design, we demonstrate the first surface-normal semiconductor modulator structure grown on silicon.