Roy Moonseuk Kim
IBM
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Publication
Featured researches published by Roy Moonseuk Kim.
international solid-state circuits conference | 2005
Brian Flachs; Shigehiro Asano; Sang Hoo Dhong; P. Hotstee; Gilles Gervais; Roy Moonseuk Kim; T. Le; Peichun Liu; Jens Leenstra; John Samuel Liberty; Brad W. Michael; H. Oh; Silvia Melitta Mueller; Osamu Takahashi; A. Hatakeyama; Yukio Watanabe; Naoka Yano
The design of a 4-way SIMD streaming data processor emphasizes achievable performance in area and power. Software controls data movement and instruction flow, and improves data bandwidth and pipeline utilization. The micro-architecture minimizes instruction latency and provides fine-grain clock control to reduce power.
Ibm Journal of Research and Development | 2007
Brian Flachs; S. Asano; Sang Hoo Dhong; Harm Peter Hofstee; Gilles Gervais; Roy Moonseuk Kim; T. N. Le; P. Liu; Jens Leenstra; John Samuel Liberty; Brad W. Michael; H.-J. Oh; Stefan Mueller; Osamu Takahashi; K. Hirairi; A. Kawasumii; H. Murakami; H. Noro; S. Onishi; J. Pille; J. Silberman; S. Yong; A. Hatakeyama; Y. Watanabe; Naoka Yano; Daniel Alan Brokenshire; Mohammad Peyravian; V. To; Eiji Iwata
This paper describes the architecture and implementation of the original gaming-oriented synergistic processor element (SPE) in both 90-nm and 65-nm silicon-on-insulator (SOI) technology and introduces a new SPE implementation targeted for the high-performance computing community. The Cell Broadband Engine™ processor contains eight SPEs. The dual-issue, four-way single-instruction multiple-data processor is designed to achieve high performance per area and power and is optimized to process streaming data, simulate physical phenomena, and render objects digitally. Most aspects of data movement and instruction flow are controlled by software to improve the performance of the memory system and the core performance density. The SPE was designed as an 11-F04 (fan-out-of-4-inverter-delay) processor using 20.9 million transistors within 14.8 mm 2 using the IBM 90-nm SOI low-k process. CMOS (complementary metal-oxide semiconductor) static gates implement the majority of the logic. Dynamic circuits are used in critical areas and occupy 19% of the non-static random access memory (SRAM) area. Instruction set architecture, microarchitecture, and physical implementation are tightly coupled to achieve a compact and power-efficient design. Correct operation has been observed at up to 5.6 GHz and 7.3 GHz, respectively, in 90-nm and 65-nm SOI technology.
Archive | 2000
Maximino Aguilar; Sanjay Gupta; Roy Moonseuk Kim; James Michael Stafford
Archive | 2000
Maximino Aguilar; Sanjay Gupta; Roy Moonseuk Kim; James Michael Stafford
Archive | 1999
Maximino Aguilar; Norbert Blam; Michael Criscolo; Sanjay Gupta; John William Gorrell; Roy Moonseuk Kim; James Michael Stafford
Archive | 1997
Roy Moonseuk Kim; Sanjay Gupta
Archive | 2003
Michael Norman Day; Roy Moonseuk Kim; Mark Richard Nutter; Yasukichi Okawa; Thuong Quang Truong
Archive | 2000
Maximino Aguilar; Sanjay Gupta; Roy Moonseuk Kim; James Michael Stafford
Archive | 2006
Jonathan J. DeMENT; Roy Moonseuk Kim; Alvan W. Ng; Kevin C. Stelzer; Thuong Quang Truong
Archive | 2005
Roy Moonseuk Kim; Yasukichi Okawa; Thuong Quang Truong