Rubab Amin

Active material, optical mode and cavity impact on nanoscale electro-optic modulation performance

Abstract Electro-optic modulation is a key function in optical data communication and possible future optical compute engines. The performance of modulators intricately depends on the interaction between the actively modulated material and the propagating waveguide mode. While a variety of high-performance modulators have been demonstrated, no comprehensive picture of what factors are most responsible for high performance has emerged so far. Here we report the first systematic and comprehensive analytical and computational investigation for high-performance compact on-chip electro-optic modulators by considering emerging active materials, model considerations and cavity feedback at the nanoscale. We discover that the delicate interplay between the material characteristics and the optical mode properties plays a key role in defining the modulator performance. Based on physical tradeoffs between index modulation, loss, optical confinement factors and slow-light effects, we find that there exist combinations of bias, material and optical mode that yield efficient phase or amplitude modulation with acceptable insertion loss. Furthermore, we show how material properties in the epsilon near zero regime enable reduction of length by as much as by 15 times. Lastly, we introduce and apply a cavity-based electro-optic modulator figure of merit, Δλ/Δα, relating obtainable resonance tuning via phase shifting relative to the incurred losses due to the fundamental Kramers-Kronig relations suggesting optimized device operating regions with optimized modulation-to-loss tradeoffs. This work paves the way for a holistic design rule of electro-optic modulators for high-density on-chip integration.

Attojoule-efficient graphene optical modulators

Electro-optic modulation is a technology-relevant function for signal keying, beam steering, or neuromorphic computing through providing the nonlinear activation function of a perceptron. With silicon-based modulators being bulky and inefficient, here we discuss graphene-based devices heterogeneously integrated. This study provides a critical and encompassing discussion of the physics and performance of graphene. We provide a holistic analysis of the underlying physics of modulators including graphenes index tunability, the underlying optical mode, and discuss resulting performance vectors for this novel class of hybrid modulators. Our results show that reducing the modal area and reducing the effective broadening of the active material are key to improving device performance defined by the ratio of energy-bandwidth and footprint. We further show how the waveguides polarization must be in-plane with graphene, such as given by plasmonic-slot structures, for performance improvements. A high device performance can be obtained by introducing multi- or bi-layer graphene modulator designs. Lastly, we present recent results of a graphene-based hybrid-photon-plasmon modulator on a silicon platform and discuss electron beam lithography treatments for transferred graphene for the relevant Fermi level tuning. Being physically compact, this 100  aJ/bit modulator opens the path towards a novel class of attojoule efficient opto-electronics.

Low-loss tunable 1D ITO-slot photonic crystal nanobeam cavity

Tunable optical material properties enable novel applications in both versatile metamaterials and photonic components including optical sources and modulators. Transparent conductive oxides (TCOs) are able to highly tune their optical properties with applied bias via altering their free carrier concentration and hence plasma dispersion. The TCO material indium tin oxide (ITO) exhibits unity-strong index change and epsilon-near-zero behavior. However, with such tuning the corresponding high optical losses, originating from the fundamental Kramers–Kronig relations, result in low cavity finesse. However, achieving efficient tuning in ITO-cavities without using light–matter interaction enhancement techniques such as polaritonic modes, which are inherently lossy, is a challenge. Here we discuss a novel one-dimensional photonic crystal nanobeam cavity to deliver a cavity system offering a wide range of resonance tuning range, while preserving physical compact footprints. We show that a vertical silicon-slot waveguide incorporating an actively gated-ITO layer delivers ~3.4 nm of tuning. By deploying distributed feedback, we are able to keep the Q-factor moderately high with tuning. Combining this with the sub-diffraction limited mode volume (0.1 (λ/2n)3) from the photonic (non-plasmonic) slot waveguide, facilitates a high Purcell factor exceeding 1000. This strong light–matter-interaction shows that reducing the mode volume of a cavity outweighs reducing the losses in diffraction limited modal cavities such as those from bulk Si3N4. These tunable cavities enable future modulators and optical sources such as tunable lasers.

Waveguide-based electro-absorption modulator performance: comparative analysis

Electro-optic modulators perform a key function for data processing and communication. Rapid growth in data volume and increasing bits per second rates demand increased transmitter and thus modulator performance. Recent years have seen the introduction of new materials and modulator designs to include polaritonic optical modes aimed at achieving advanced performance in terms of speed, energy efficiency, and footprint. Such ad hoc modulator designs, however, leave a universal design for these novel material classes of devices missing. Here we execute a holistic performance analysis for waveguide-based electro-absorption modulators and use the performance metric switching energy per unit bandwidth (speed). We show that the performance is fundamentally determined by the ratio of the differential absorption cross-section of the switching materials broadening and the waveguide effective mode area. We find that the former shows highest performance for a broad class of materials relying on Pauli-blocking (absorption saturation), such as semiconductor quantum wells, quantum dots, graphene, and other 2D materials, but is quite similar amongst these classes. In this respect these materials are clearly superior to those relying on free carrier absorption, such as Si and ITO. The performance improvement on the material side is fundamentally limited by the oscillator sum rule and thermal broadening of the Fermi-Dirac distribution. We also find that performance scales with modal waveguide confinement. Thus, we find highest energy-bandwidth-ratio modulator designs to be graphene, QD, QW, or 2D material-based plasmonic slot waveguides where the electric field is in-plane with the switching material dimension. We show that this improvement always comes at the expense of increased insertion loss. Incorporating fundamental device physics, design trade-offs, and resulting performance, this analysis aims to guide future experimental modulator explorations.

Atto-Joule, high-speed, low-loss plasmonic modulator based on adiabatic coupled waveguides

Abstract In atomic multi-level systems, adiabatic elimination (AE) is a method used to minimize complicity of the system by eliminating irrelevant and strongly coupled levels by detuning them from one another. Such a three-level system, for instance, can be mapped onto physically in the form of a three-waveguide system. Actively detuning the coupling strength between the respective waveguide modes allows modulating light to propagate through the device, as proposed here. The outer waveguides act as an effective two-photonic-mode system similar to ground and excited states of a three-level atomic system, while the center waveguide is partially plasmonic. In AE regime, the amplitude of the middle waveguide oscillates much faster when compared to the outer waveguides leading to a vanishing field build up. As a result, the plasmonic intermediate waveguide becomes a “dark state,” hence nearly zero decibel insertion loss is expected with modulation depth (extinction ratio) exceeding 25 dB. Here, the modulation mechanism relies on switching this waveguide system from a critical coupling regime to AE condition via electrostatically tuning the free-carrier concentration and hence the optical index of a thin indium thin oxide (ITO) layer resides in the plasmonic center waveguide. This alters the effective coupling length and the phase mismatching condition thus modulating in each of its outer waveguides. Our results also promise a power consumption as low as 49.74aJ/bit. Besides, we expected a modulation speed of 160 GHz reaching to millimeter wave range applications. Such anticipated performance is a direct result of both the unity-strong tunability of the plasmonic optical mode in conjunction with utilizing ultra-sensitive modal coupling between the critically coupled and the AE regimes. When taken together, this new class of modulators paves the way for next generation both for energy and speed conscience optical short-reach communication such as those found in interconnects.

110 attojoule-per-bit Graphene plasmon modulator on Silicon

We demonstrate a plasmonic Graphene-based electro-absorption modulator heterogeneously integrated in Silicon photonics consuming 110 aJ/bit and being 15 μm compact. We show how the plasmonic metal enables steep switching via improved contact resistance.