Rudheer D. Bapat

Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers

We report the synthesis and optical characterization of semipolar-oriented III-nitride quantum well (QW) structures obtained by growth on chemical vapor deposited graphene layers using metalorganic vapor phase epitaxy. Various multi-quantum well stacks of GaN(QW)/AlGaN(barrier) and InGaN (QW)/GaN (barrier) were grown. Growth on graphene not only helps achieve a semipolar orientation but also allows facile transfer of the QW multilayer stack to other cheap, flexible substrates. We demonstrate room-temperature photoluminescence from layers transferred to flexible Kapton films.

Comparison of GaN nanowires grown on c-, r- and m-plane sapphire substrates

Gallium nitride nanowires were grown on c-plane, r-plane and m-plane sapphire substrates in a showerhead metalorganic chemical vapor deposition system using nickel catalyst with trimethylgallium and ammonia as precursors. We studied the inuence of carrier gas, growth temperature, reactor pressure, reactant ow rates and substrate orientation in order to obtain thin nanowires. The nanowires grew along the and axes depending on the substrate orientation. These nanowires were further characterized using x-ray diraction, electron microscopy, photoluminescence and Raman

Light matter interaction in WS2 nanotube-graphene hybrid devices

We study the light matter interaction in WS2 nanotube-graphene hybrid devices. Using scanning photocurrent microscopy, we find that by engineering graphene electrodes for WS2 nanotubes we can improve the collection of photogenerated carriers. We observe inhomogeneous spatial photocurrent response with an external quantum efficiency of ∼1% at 0 V bias. We show that defects play an important role and can be utilized to enhance and tune photocarrier generation.

Enhanced optical-to-THz conversion efficiency of photoconductive antenna using dielectric nano-layer encapsulation

Photoconductive antennas (PCAs) are among the most conventional devices used for emission as well as detection of terahertz (THz) radiation. However, due to their low optical-to-THz conversion efficiencies, applications of these devices in out-of-laboratory conditions are limited. In this paper, we report several factors of enhancement in THz emission efficiency from conventional PCAs by coating a nano-layer of dielectric (TiO2) on the active area between the electrodes of a semi-insulating GaAs-based device. Extensive experiments were done to show the effect of thicknesses of the TiO2 layer on the THz power enhancement with different applied optical power and bias voltages. Multiphysics simulations were performed to elucidate the underlying physics behind the enhancement of efficiency of the PCA. Additionally, this layer increases the robustness of the electrode gaps of the PCAs with high electrical insulation as well as protect it from external dust particles.

Growth of high-quality Bi 2 Sr 2 CaCu 2 O 8+δ whiskers and electrical properties of resulting exfoliated flakes

In this work, we demonstrate a simple technique to grow high-quality whiskers of Bi2 Sr2 CaCu2 O8+δ – a high Tc superconductor. Structural analysis shows the single-crystalline nature of the grown whiskers. To probe electrical properties, we exfoliate these whiskers into thin flakes (~50 nm thick) using the scotch-tape technique and develop a process to realize good electrical contacts. We observe a superconducting critical temperature, Tc, of 86 K. We map the evolution of the critical current as a function of temperature. With 2-D materials emerging as an exciting platform to study low-dimensional physics, our work paves the way for future studies on two-dimensional high-Tc superconductivity.