Rui Qing Chu

Structure and Dielectric Behavior of La-Doped BaTiO3 Ceramics

BaTiO3 ceramics doped with 1, 2, 3 and 4 mol% La were prepared by sol-gel method. The effects of La doping on structure and dielectric characteristics of Ba1−xLaxTiO3 were investigated. The results show that: All the powders calcined at 800°C were found to be perovskite structure with cubic phase. Ba1−xLaxTiO3 were sintered at 1300°C, phase transition behavior appeared from tetragonal phase to cubic phase with increasing La-doping level. As the doping concentration increases, the grain growth of the Ba1−xLaxTiO3 ceramics was controlled efficiently and Curie point shifted to lower temperature. The grain size decreased from 20μm with 0 mol% La doped to 0.5μm with 4 mol% La doped. The Curie point shift rate was 22 °C/ mol% with increasing La content. The dielectric constant of La doped Ba1−xLaxTiO3 ceramics increased with increasing La content and a maximum value of 8900 was attained with 4 mol% La doped.

Study on Ferroelectric and Dielectric Properties of Zr-Doped Sr2Bi4Ti5O18 Ceramics

Zr-doped Sr2Bi4Ti5O18 (SBTi) bismuth layer-structured ferroelectric ceramics were prepared and studied. XRD patterns revealed that all the ceramic samples were single phase compounds. SEM images showed that dense microstructures with uniform gain size were obtained in all samples. The effects of Zr4+ doping on the dielectric, ferroelectric and piezoelectric properties of SBTi ceramics were also investigated. It was found that Zr4+ dopant gradually decreased the Curie temperature (Tc), enhanced the remnant polarization (2Pr) and decreased the coercive field (Ec) of SBTi ceramics. Furthermore, the piezoelectric properties of the SBTi ceramics were improved by enlarging the content of Zr. The SBTi ceramics with 4 mol% of Zr4+ dopant exhibited good electrical properties: d33 = 21 pC/N, 2Pr = 14.3 μC/cm2, Tc = 251°C, εr = 376, tanδ = 1.8%.

Microstructure and Electrical Properties of the (Ba1-xCax)(Ti0.96Zr0.02Sn0.02)O3 Ceramics

Lead-free (Ba1-xCax)(Ti0.96Zr0.02Sn0.02)O3 (BCTZS) (x=0, 0.01, 0.02, 0.03) ceramics were prepared using conventional solid-state reaction technique. The effects of Ca content on the microstructure and electrical properties of the BCTZS ceramics were investigated. High piezoelctric coefficient was obtained for the sample at x=0.02.

Effects of La-Doping on Phase Structure and Electrical Properties of Pb(Mg1/3Nb2/3)0.67Ti0.33O3 Ceramic

La-doped Pb(Mg1/3Nb2/3)0.67Ti0.33O3 ceramics were fabricated by a two-stage sintering method from conventional raw materials. The effects of La doping on the phase structure and electrical properties of ceramics were investigated. X-ray diffraction analysis showed that the pyrochlore phase increased with the increase of La-doping level. The effects of La doping on the dielectric, ferroelectric and piezoelectric properties of the ceramics were also investigated. The results showed that La doping seriously weakened the electrical properties of the ceramics. The ceramics possess optimum properties (d33=239pC/N, Pr=10.6μC/cm2, Ec=8.5kV/cm, tanδ=0.029, εr = 2250) when the doping level is low (x = 0.02).

Effect of La2O3 on the Microstructure and Electrical Properties of 0.82Bi0.5Na0.5TiO3-0.18Bi0.5K0.5TiO3 Ceramics

La2O3-doped lead-free 0.82Bi0.5Na0.5TiO3-0.18Bi0.5K0.5TiO3 (abbreviated to 0.82BNT-0.18BKT) piezoelectric ceramics were synthesized by the conventional mixed-oxide method, and the effect of La2O3 addition on the dielectric and piezoelectric properties was investigated. X-ray diffraction (XRD) patterns show that La2O3 diffuses into the lattice of the 0.82BNT-0.18BKT ceramics to form a solid solution with a pure perovskite structure. SEM images indicate that the grain size of the 0.82BNT-0.18BKT ceramics increased with the addition of La2O3 doping. The electrical properties of 0.82BNT-0.18BKT ceramics have been greatly improved by certain amount of La2O3 substitutions. At room temperature, the 0.82BNT-0.18BKT ceramics doped with 0.25 wt. % La2O3 exhibited the optimum properties with high piezoelectric constant (d33 = 142 pC/N) and high planar coupling factor (kp = 0.23).

Study on Dielectric and Ferroelectric Properties of Gd-Doped Sr2Bi4Ti5O18 Ceramics

Lead-free piezoelectric ceramics Sr2Bi4-xGdxTi5O18 were prepared by conventional solid-state reaction method. Pure bismuth layered structural ceramics with uniform gain size were obtained in all samples. The effect of Gd-doping on the dielectric, ferroelectric and piezoelectric properties of Sr2Bi4Ti5O18 ceramics were also investigated. It was found that that Gd3+ dopant gradually decreased the Curie temperature (Tc) with the lower dielectric loss (tand) of SBTi ceramics. In addition, Gd-doping with appropriate content improved the ferroelectric and piezoelectric properties of the SBTi ceramics. The piezoelectric constant (d33) of the Sr2Bi3.9Gd0.1Ti5O18 ceramic reached the maximum value, which is 22 pC/N. The results showed that the Sr2Bi4-xGdxTi5O18 ceramic was a promising lead-free piezoelectric material.

Study on Phase Structure and Electrical Properties of La-Doped (K0.5Na0.5)0.94Li0.06NbO3 Ceramics

Lead-free piezoceramics (K0.5Na0.5)0.94-3xLi0.06LaxNbO3 were synthesized by the conventional solid-state reaction process. The effect of La-doping on the phase structure and electrical properties of (K0.5Na0.5)0.94Li0.06NbO3 ceramics was investigated. X-ray diffraction analysis showed that the crystal structure of the ceramics changed from coexistence of orthorhombic and tetragonal phases to pseudo-cubic phase with the increase of La-doping level, and the change of phase structure seriously weakened the dielectric, ferroelectric and piezoelectric properties of the ceramics. In addition, it was found that the La-doping improved the density of the ceramics and the ceramics became dense. Meanwhile, the ceramics with La-doping displayed a relative lower loss tangent (tanδ) from room temperature to approximately 350°C.

Electrical Properties of Nb-Doped and Nb-Mn-Codoped BaTiO3-(Bi0.5Na0.5)TiO3 Lead-Free PTCR Ceramics

Nb-doped and Nb-Mn-codoped (1-xmol%)BaTiO3-xmol%(Bi0.5Na0.5)TiO3 (BBNTx) lead-free positive temperature coefficient of resistivity (PTCR) ceramics were prepared by the conventional solid state reaction method. The XRD patterns indicated that all BBNTx samples formed a single perovskite structure with tetragonal phase. 0.25 mol% Nb doped BBNT1 ceramic, sintered at 1330°C for 1h in air, had low room-temperature resistivity (ρ25) of 80 Ω•cm and a high resistivity jump (maximum resistivity [ρmax]/minimum resistivity [ρmin]) of 4.2 orders of magnitude with Tc about 152°C. The Nb-doped BBNTx (10≤x≤60) ceramics also showed distinct PTC effect with Tc between 185 and 232°C by sintering in N2, which was shut off when samples were cooled to a low temperature. In addition, The Nb-Mn-codoped BBNT1 ceramics exhibited higher resistivity jump than the single Nb-doped ones, with increasing the room-temperature resistivity.

Ferroelectric and Dielectric Properties of Vanadium-Doped Bismuth Layer Sr2Bi4Ti5O18 Ceramics

Sr2Bi (4-x/3) Ti (5-x) VxO18 (x = 0.0-0.06) (SBTV) ceramics were prepared by a solid-state reaction method, and the ferroelectric and dielectric properties of the ceramics were investigated with respect to the amount of V deficiency. XRD analysis indicated that the oxide compounds were Aurivillius phases. The Curie temperature of SBTV ceramics was improved by doping of certain amount of V. The V deficiency also led to a steady increase in the density together with a decrease in the coercive field. For the ceramics with x = 0.06, the properties become optimum: d33 = 19 pC/N, Tc = 306oC, Ec = 43.7 KV/cm.

Preparation and Dielectric Properties of the Layered Perovskite Sr4Bi4Ti7O24 Ferroelectric Ceramics

Sr4Bi4Ti7O24 (SBT7) ceramics were prepared. X-ray powder diffraction indicated that single layered perovskite ferroelectrics were obtained. The ferroelectric and dielectric properties of SBT7 ceramics were investigated. The results showed that Sr4Bi4Ti7O24 is piezoelectric material. The dielectric properties were measured as a function of temperature and two peaks were observed in the curve.