Ruxue Li
Changchun University of Science and Technology
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Featured researches published by Ruxue Li.
Nanophotonics | 2017
Ruxue Li; Zhipeng Wei; Fenghuan Zhao; Xian Gao; Xuan Fang; Yongfeng Li; Xinwei Wang; Jilong Tang; Dan Fang; Haizhu Wang; Rui Chen; Xiaohua Wang
Abstract The localized states in ZnO nanowires (NWs) through the growth of ZnS shell have been introduced in this paper. Morphology and optical properties of the ZnO/ZnS core-shell heterostructured NWs after different rapid thermal annealing (RTA) treatments are investigated. Transmission electron microscopy measurements show the gradual disappearing of the jagged boundary between ZnO and ZnS with the increase of RTA temperature, while a decrease of interfacial composition fluctuation and a formation of ZnOS phase can be found after a RTA treatment of 300°C. Temperature-dependent photoluminescence exhibits the features of “S-shape” peak positions and a “valley shape” for the emission width, implying the existence of localized excitons in the core-shell NWs. Moreover, it is noted that the RTA treatments can lower the localized degree which is confirmed by optical measurement. The results indicate that the optical behavior of excitons in ZnO/ZnS core-shell heterostructured NWs can be manipulated by appropriate thermal treatments, which is very important for their practical device applications.
Nanoscale | 2018
Ruxue Li; Zhipeng Wei; Haixia Zhao; Hongrui Yu; Xuan Fang; Dan Fang; Junzi Li; Tingchao He; Rui Chen; Xiaohua Wang
All-inorganic perovskite quantum dots (QDs) have been considered as outstanding candidates for high-performance optoelectronic device applications. However, the chemical and optical stabilities restrict their device applications. In this paper, hydrophobic zeolites were proposed to modify CsPbBr3 QDs to prevent water influence while achieving good dispersion. These hybrid luminescent materials possess high internal quantum efficiency (IQE, ∼81%@3.52 W cm-2) and low dissociation levels that give rise to improved optical stability in terms of temperature and time. More interesting, it is found that this nanocomposite is able to maintain its optical limiting performance under intensive laser illumination. This paper discusses the linear and nonlinear optical characteristics of CsPbBr3 QDs, which would be of great importance for both fundamental physics investigation and practical multiphoton applications.
Journal of Materials Science: Materials in Electronics | 2018
Yanbin Wang; Xuan Fang; Ruxue Li; Yongfeng Li; Bin Yao; Dengkui Wang; Jilong Tang; Dan Fang; Xinwei Wang; Xiaohua Wang; Zhipeng Wei
With the unique properties and superior performance, ZnO/ZnS core shell nanostructures have been applied in many photoelectric devices. Varied growth methods can synthesize ZnO/ZnS core shell samples, which exhibit different crystal and optical properties, and have the positive or negative effect on performance of related devices. To investigate the growth and properties, ZnO/ZnS core shell nanowires were grown through surface sulfurization. X-ray diffraction and scanning electron microscopy measurements indicated surface sulfurization degree can affect crystal quality. In addition, photoluminescence results exhibited that ZnO/ZnS heterojunction emission properties were dependent on shell layers quality. By increasing the amount of surface powder, it would improve shell layers’ crystal quality. And with optimal surface sulfurization degree, the vacancies and interstitial atoms defects can be restrained, which may improve photo-generated carriers separation efficiency.
Materials Research Express | 2016
Ruxue Li; Zhipeng Wei; Xue Liu; Yongfeng Li; Xuan Fang; Jilong Tang; Dan Fang; Xian Gao; Dengkui Wang; Yongqin Hao; Bin Yao; Xiaohui Ma; Xiaohua Wang
The valence band offset (ΔE V) of a MgO/GaSb heterostructure was determined using x-ray photoelectron spectroscopy measurements. A ΔE V value of 2.84 ± 0.10 eV was calculated by using Ga 3d3/2 and Mg 2p1/2 binding energies as references. Taking the empirical band gaps of 7.83 eV and 0.73 eV for MgO and GaSb thin films into consideration, respectively, we obtained the type-I band alignment of a MgO/GaSb heterostructure with a conduction band offset (ΔE c) of 4.26 ± 0.10 eV, suggesting a nested interface band alignment.
Nanoscale Research Letters | 2016
Ruxue Li; Xiaohua Wang; Xinwei Wang; Haoran Zhang; Jingxin Pan; Jilong Tang; Dan Fang; Xiaohui Ma; Yongfeng Li; Bin Yao; Jie Fan; Zhipeng Wei
ACS Applied Nano Materials | 2018
Ruxue Li; Zhipeng Wei; Xuan Fang; Yanbin Wang; Yongfeng Li; Dengkui Wang; Jilong Tang; Dan Fang; Xueying Chu; Bin Yao; Rui Chen; Xiaohua Wang
international conference on optoelectronics and microelectronics | 2015
Ruxue Li; Dan Fang; Li Xu; Jilong Tang; Ting Li; Fei Wang; Xueying Chu; Jinhua Li; Xiaohua Wang
international conference on optoelectronics and microelectronics | 2015
Yanli Wu; Dan Fang; Li Xu; Xiaohui Ma; Jilong Tang; Xian Gao; Ruxue Li; Shouzhu Niu; Xiaohua Wang
The 3rd International Conference on Machinery, Materials Science and Energy Engineering (ICMMSEE 2015) | 2015
Ruxue Li; Dan Fang; Jilong Tang; Xuan Fang; Xiaohua Wang; Zhipeng Wei; Shuangpeng Wang; Fang Fang
The 3rd International Conference on Machinery, Materials Science and Energy Engineering (ICMMSEE 2015) | 2015
Shouzhu Niu; Dan Fang; Ruxue Li; Jilong Tang; Xuan Fang; Zhipeng Wei; Fang Fang