Ryan Need

Interface-Driven Ferromagnetism within the Quantum Wells of a Rare Earth Titanate Superlattice

Here we present polarized neutron reflectometry measurements exploring thin film heterostructures composed of a strongly correlated Mott state, GdTiO_{3}, embedded with SrTiO_{3} quantum wells. Our results reveal that the net ferromagnetism inherent to the Mott GdTiO_{3} matrix propagates into the nominally nonmagnetic SrTiO_{3} quantum wells and tracks the magnetic order parameter of the host Mott insulating matrix. Beyond a well thickness of 5 SrO layers, the magnetic moment within the wells is dramatically suppressed, suggesting that quenched well magnetism comprises the likely origin of quantum critical magnetotransport in this thin film architecture. Our data demonstrate that the interplay between proximate exchange fields and polarity-induced carrier densities can stabilize extended magnetic states within SrTiO_{3} quantum wells.

Octahedral tilt independent magnetism in confined GdTiO3 films

Low temperature polarized neutron reflectometry measurements are presented, exploring the evolution of ferrimagnetism in thin GdTiO3 films embedded within a SrTiO3 matrix. In GdTiO3 films thinner than ∼4 nm, the TiO6 octahedral tilts endemic to GdTiO3 coherently relax toward the undistorted, cubic phase of SrTiO3. Our measurements indicate that the ferrimagnetic state within the GdTiO3 layers survives as these TiO6 octahedral tilts are suppressed. Furthermore, our data suggest that layers of suppressed magnetization (i.e., magnetic dead layers) develop within the GdTiO3 layer at each GdTiO3/SrTiO3 interface and explain the apparent magnetization suppression observed in thin GdTiO3 films when using volume-averaged techniques. Our data show that the low temperature magnetic moment inherent to the core GdTiO3 layers is only weakly impacted as the octahedral tilt angles are suppressed by more than 50% and the t2g bandwidth is dramatically renormalized.Low temperature polarized neutron reflectometry measurements are presented, exploring the evolution of ferrimagnetism in thin GdTiO3 films embedded within a SrTiO3 matrix. In GdTiO3 films thinner than ∼4 nm, the TiO6 octahedral tilts endemic to GdTiO3 coherently relax toward the undistorted, cubic phase of SrTiO3. Our measurements indicate that the ferrimagnetic state within the GdTiO3 layers survives as these TiO6 octahedral tilts are suppressed. Furthermore, our data suggest that layers of suppressed magnetization (i.e., magnetic dead layers) develop within the GdTiO3 layer at each GdTiO3/SrTiO3 interface and explain the apparent magnetization suppression observed in thin GdTiO3 films when using volume-averaged techniques. Our data show that the low temperature magnetic moment inherent to the core GdTiO3 layers is only weakly impacted as the octahedral tilt angles are suppressed by more than 50% and the t2g bandwidth is dramatically renormalized.

Revealing Optical Transitions and Carrier Recombination Dynamics within the Bulk Band Structure of Bi2Se3

Bismuth selenide (Bi2Se3) is a prototypical 3D topological insulator whose Dirac surface states have been extensively studied theoretically and experimentally. Surprisingly little, however, is known about the energetics and dynamics of electrons and holes within the bulk band structure of the semiconductor. We use mid-infrared femtosecond transient reflectance measurements on a single nanoflake to study the ultrafast thermalization and recombination dynamics of photoexcited electrons and holes within the extended bulk band structure over a wide energy range (0.3 to 1.2 eV). Theoretical modeling of the reflectivity spectral line shapes at 10 K demonstrates that the electrons and holes are photoexcited within a dense and cold electron gas with a Fermi level positioned well above the bottom of the lowest conduction band. Direct optical transitions from the first and the second spin-orbit split valence bands to the Fermi level above the lowest conduction band minimum are identified. The photoexcited carriers thermalize rapidly to the lattice temperature within a couple of picoseconds due to optical phonon emission and scattering with the cold electron gas. The minority carrier holes recombine with the dense electron gas within 150 ps at 10 K and 50 ps at 300 K. Such knowledge of interaction of electrons and holes within the bulk band structure provides a foundation for understanding how such states interact dynamically with the topologically protected Dirac surface states.