Ryota Sekiguchi

Oscillations up to 1.40 THz from Resonant-Tunneling-Diode-Based Oscillators with Integrated Patch Antennas

Oscillations from 1.02 to 1.40 THz were observed at room temperature from resonant-tunneling-diode (RTD)-based oscillators with integrated patch antennas by improving the mesa structure and tuning the length of the antenna and the feed point location of the RTD. A two-step post structure realized a reduction of series resistance of the RTD, and the oscillation frequency significantly increased with the feed point closer to the center of patch antenna at around 1 THz. Experimental results agreed well with the analysis.

Subterahertz oscillations from triple-barrier resonant tunneling diodes with integrated patch antennas

We report on subterahertz oscillations of resonant tunneling diode oscillators with an integrated patch antenna. The device consists of an InGaAs/InAlAs triple-barrier resonant tunneling diode and a patch antenna on an InP substrate. Current-voltage characteristics indicate a peak current density of 280 kA/cm2, with a peak-valley ratio of about 3 at room temperature. An oscillation frequency of 517 GHz was observed at room temperature through Fourier transformed infrared spectroscopy. The results agree with electromagnetic analysis.