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Applied Physics Letters | 2004

Low-glancing-angle x-ray diffraction study on the relationship between crystallinity and properties of C60 field effect transistor

Hirotaka Ohashi; Katsumi Tanigaki; Ryotaro Kumashiro; Syuji Sugihara; Shinya Hiroshiba; Shigeru Kimura; Kenichi Kato; Masaki Takata

The structures of C60 thin films grown on Si, SiO2, and Al2O3 are studied by a low-glancing-angle x-ray diffraction method and the properties of C60 field effect transistors (FETs) are understood on a basis of this technique. Analyses using the two-dimensional Ewald circle and the Laue function give the detailed interpretation of the diffraction peaks together with information of the preferred orientation and the grain size of polycrystalline thin films. The grain size varies from 100 to 500 A upon the optimal conditions of the thin film growth and the preferred orientation of the C60 〈111〉 crystal axis with random on a substrate surface is obtained. It is clearly shown that these variations in quality of the C60 thin films exert unexpectedly little influence on the FET characteristics.


Journal of Physics: Conference Series | 2009

Fullerene Nano Materials (Symposium of IUMRS-ICA2008)

Kun'ichi Miyazawa; Daisuke Fujita; Takatsugu Wakahara; Tokushi Kizuka; Kiyoto Matsuishi; Y. Ochiai; Masaru Tachibana; Hironori Ogata; Tadahiko Mashino; Ryotaro Kumashiro; Hidetoshi Oikawa

This volume contains peer-reviewed invited and contributed papers that were presented in Symposium N Fullerene Nano Materials at the IUMRS International Conference in Asia 2008 (IUMRS-ICA 2008), which was held on 9–13 December 2008, at Nagoya Congress Center, Nagoya, Japan. Over twenty years have passed since the discovery of C60 in 1985. The discovery of superconductivity of C60 in 1991 suggested infinite possibilities for fullerenes. On the other hand, a new field of nanocarbon has been developed recently, based on novel functions of the low-dimensional fullerene nanomaterials that include fullerene nanowhiskers, fullerene nanotubes, fullerene nanosheets, chemically modified fullerenes, endohedral fullerenes, thin films of fullerenes and so forth. Electrical, electrochemical, optical, thermal, mechanical and various other properties of fullerene nanomaterials have been investigated and their novel and anomalous nature has been reported. Biological properties of fullerene nanomaterials also have been investigated both in medical applications and toxicity aspects. The recent research developments of fullerene nanomaterials cover a variety of categories owing to their functional diversity. This symposium aimed to review the progress in the state-of-the-art technology based on fullerenes and to offer the forum for active interdisciplinary discussions. 24 oral papers containing 8 invited papers and 22 poster papers were presented at the two-day symposium. Topics on the social acceptance of nanomaterials including fullerene were presented on the first day of the symposium. Biological impacts of nanomaterials and the importance of standardization of nanomaterials characterization were also shown. On the second day, the synthesis, properties, functions and applications of various fullerene nanomaterials were shown in both the oral and poster presentations. We are grateful to all invited speakers and many participants for valuable contributions and active discussions. This symposium was partly supported by the Coordination Program of Science and Technology Projects Developing Nanotechnologies and Engaging the Public conducted by the Council for Science and Technology Policy (CSTP) and funded by Special Coordination Funds for Promoting Science and Technology. Organizing committee of Symposium N (IUMRS-ICA 2008) Chair Kunichi Miyazawa (National Institute for Materials Science, Japan) Vice Chairs Daisuke Fujita (National Institute for Materials Science, Japan) Takatsugu Wakahara (National Institute for Materials Science, Japan) Tokushi Kizuka (Tsukuba University, Japan) Kiyoto Matsuishi (Tsukuba University, Japan) Yuichi Ochiai (Chiba University, Japan) Masaru Tachibana (Yokohama City University, Japan) Hironori Ogata (Hosei University, Japan) Tadahiko Mashino (Keio University, Japan) Ryotaro Kumashiro (Tohoku University, Japan) Hidetoshi Oikawa (Tohoku University, Japan)


Chemical Physics Letters | 2003

N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit

T. Kanbara; K. Shibata; S. Fujiki; Yoshihiro Kubozono; Setsuo Kashino; Tsuneo Urisu; M. Sakai; Akihiko Fujiwara; Ryotaro Kumashiro; Katsumi Tanigaki


Archive | 2006

Metal-including fullerene conductive material and its manufacturing method

Takeshi Akasaka; Ryotaro Kumashiro; Masaru Maeda; Katsumi Tanigaki; Takahiro Tsuchiya; Koji Wakahara; 優 前田; 敬広 土屋; 良太郎 熊代; 孝次 若原; 勝巳 谷垣; 健 赤阪


日本物理学会講演概要集 | 2011

22aTG-2 Enhancement of ambipolar transport behavior of organic field effect transistors by electron trap elimination

Thangavel Kanagasekaran; Susumu Ikeda; Ryotaro Kumashiro; Hidekazu Shimotani; Katsumi Tanigaki


日本物理学会講演概要集 | 2010

22pGS-2 Ambipolar injection of carriers and its application to light emission in organic field effect transistors

Yan Wang; Ryotaro Kumashiro; Susumu Ikeda; Yuguang Ma; Katsumi Tanigaki


日本物理学会講演概要集 | 2010

23pRL-15 Understanding of influence on Au-electrode surface modification by thiol SAMs in organic thin-film transistors

Yan Wang; Susumu Ikeda; Yunye Liang; Hiroshi Mizuseki; Yoshiyuki Kawazoe; Ryotaro Kumashiro; Katsumi Tanigaki


日本物理学会講演概要集 | 2009

28pYG-9 Structure study of Layered SrAl_2Ge_2 Alloy

Jun Tang; Jing Ju; Zhaofei Li; Ryotaro Kumashiro; Kazumi Sato; Masanori Watahiki; Katsumi Tanigaki


Journal of Physics: Conference Series | 2009

PREFACE: Fullerene Nano Materials (Symposium of IUMRS-ICA2008)

Kun'ichi Miyazawa; Daisuke Fujita; Takatsugu Wakahara; Tokushi Kizuka; Kiyoto Matsuishi; Y. Ochiai; Masaru Tachibana; Hironori Ogata; Tadahiko Mashino; Ryotaro Kumashiro; Hidetoshi Oikawa


日本物理学会講演概要集 | 2008

24aTG-5 Pressure effect on Structure of Ba_ Ge_ and Ba_ Si_ Clathrate

Zhaofei Li; Takeshi Rachi; Ryotaro Kumashiro; Shoji Yamanaka; Hiroshi Fukuoka; Yasuo Ohishi; Katsumi Tanigaki

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Daisuke Fujita

National Institute for Materials Science

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Masaru Tachibana

National Institute for Materials Science

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