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Featured researches published by S.A. Barve.


Journal of Physics: Conference Series | 2008

Microwave electron cyclotron resonance plasma metal organic chemical vapour deposition of Y2O3 coatings

S.A. Barve; Nitin S. Nandurkar; N Chand; S B Singh; N. Mithal; Jagannath; Bhalchandra M. Bhanage; Dinkar S. Patil; L.M. Gantayet

Y2O3 thin films were deposited on Si (111) and s.s. substrates by microwave electron cyclotron resonance (ECR) plasma metal organic chemical vapour deposition (MOCVD) using a Y(thd)3 (thd = 2,2,6,6,-tetramethyl-3,5-heptanedionate) precursor at a substrate temperature of 450 C. The deposited coatings were characterized by x-ray photoelectron spectroscopy (XPS). From the observed binding energies of the photoelectrons Y 3d5/2, Y 3d3/2 and O 1s, deposition of Y2O3 coating on the substrates is confirmed. Along with Y2O3 some carbon deposition is also seen. Oxygen plasma annealing of the deposited coatings with increase in the substrate temperature shows reduction in the carbon content in the coating. Details regarding deposition experiments, effects of oxygen plasma annealing and characterization of coatings are discussed in this paper.


Applied Surface Science | 2011

RF-PACVD of water repellent and protective HMDSO coatings on bell metal surfaces: Correlation between discharge parameters and film properties

Arup Jyoti Choudhury; S.A. Barve; Joyanti Chutia; Arup R. Pal; R. Kishore; Jagannath; M. Pande; D.S. Patil


Vacuum | 2010

Studies of radiofrequency plasma deposition of hexamethyldisiloxane films and their thermal stability and corrosion resistance behavior

Arup Jyoti Choudhury; Joyanti Chutia; H. Kakati; S.A. Barve; Arup R. Pal; Neelotpal Sen Sarma; Devasish Chowdhury; D.S. Patil


Thin Solid Films | 2011

Effects of precursor evaporation temperature on the properties of the yttrium oxide thin films deposited by microwave electron cyclotron resonance plasma assisted metal organic chemical vapor deposition

S.A. Barve; Jagannath; N. Mithal; M.N. Deo; A. Biswas; R. Mishra; Ramaswamy Kishore; Bhalchandra M. Bhanage; L.M. Gantayet; Dinkar S. Patil


Applied Surface Science | 2010

Effect of argon ion activity on the properties of Y2O3 thin films deposited by low pressure PACVD

S.A. Barve; Jagannath; M.N. Deo; R. Kishore; A. Biswas; L.M. Gantayet; D.S. Patil


Progress in Organic Coatings | 2011

Studies of physical and chemical properties of styrene-based plasma polymer films deposited by radiofrequency Ar/styrene glow discharge

Arup Jyoti Choudhury; Joyanti Chutia; S.A. Barve; H. Kakati; Arup R. Pal; Jagannath; N. Mithal; R. Kishore; M. Pandey; D.S. Patil


Tribology International | 2015

Scratch resistance and tribological properties of SiOx incorporated diamond-like carbon films deposited by r.f. plasma assisted chemical vapor deposition

N. Kumar; S.A. Barve; S.S. Chopade; R. Kar; N. Chand; S. Dash; A. K. Tyagi; Dinkar S. Patil


Plasma Processes and Polymers | 2011

Microwave ECR Plasma Assisted MOCVD of Y2O3 Thin Films Using Y(tod)3 Precursor and Their Characterization

S.A. Barve; Mukul Deo; Rajib Kar; Nimisha Sreenivasan; Ramaswamy Kishore; Arup Biswas; Bhalchandra M. Bhanage; Mohan Rao; Lalit Mohan Gantayet; Dinkar S. Patil


Thin Solid Films | 2011

Effect of impinging ion energy on the substrates during deposition of SiOx films by radiofrequency plasma enhanced chemical vapor deposition process

Arup Jyoti Choudhury; S.A. Barve; Joyanti Chutia; H. Kakati; Arup R. Pal; Jagannath; N. Mithal; R. Kishore; M. Pandey; D.S. Patil


Vacuum | 2010

Diagnostics of microwave ECR generated plasma: Effect of contaminated reference electrode

R. Kar; S.A. Barve; S.B. Singh; D.N. Barve; N. Chand; D.S. Patil

Collaboration


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D.S. Patil

Indian Institute of Technology Bombay

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Dinkar S. Patil

Bhabha Atomic Research Centre

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Bhalchandra M. Bhanage

Institute of Chemical Technology

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N. Chand

Bhabha Atomic Research Centre

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R. Kar

Bhabha Atomic Research Centre

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S.S. Chopade

Bhabha Atomic Research Centre

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A. Biswas

Bhabha Atomic Research Centre

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Devasish Chowdhury

Indian Institute of Technology Guwahati

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G.M. Rao

Indian Institute of Science

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