S. Acar

Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0.25Ga0.75N/GaN heterostructures

Hall effect measurements on undoped Al0.25Ga0.75N/GaN heterostructures grown by a metalorganic chemical vapour deposition (MOCVD) technique have been carried out as a function of temperature (20–350 K) and magnetic field (0–1.5 T). Magnetic field dependent Hall data were analysed using the quantitative mobility spectrum analysis (QMSA) technique. The mobility and density within the two-dimensional electron gas (2DEG) at the Al0.25Ga0.75N/GaN interface and within the underlying GaN layer were successfully separated by QMSA. Mobility analysis has been carried out using both the measured Hall data at a single field and the extracted data from QMSA. Analysis of the temperature-dependent mobility of 2DEG extracted from QMSA indicates that the interface roughness and alloy disorder scattering mechanisms are the dominant scattering mechanisms at low temperatures while at high temperatures only polar optical phonon scattering is the dominant mechanism. Al0.25Ga0.75N/GaN interface related parameters such as well width, deformation potential constant and correlation length were also accurately obtained from the fits of the simple analytical expressions of scattering mechanisms to the 2DEG mobility.

CO2 gas detection properties of a TIO2/Al2O3 heterostructure under UV light irradiation

Al/TiO2/p-Si and Al/TIO2/Al2O3/p-Si samples were prepared using the atomic layer deposition method (ALD) and their gas sensing properties were investigated. The electrical properties of the samples were studied using a two probe method in the temperature range 25–230 °C and at room temperature UV conditions. The TiO2/Al2O3 heterojunction sample exhibited an excellent gas sensing response to CO2 gas at room temperature and improved the effect of UV light irradiation. The results showed that heterostructures helped to improve the gas sensor properties, affected the sensing at room temperature and thus guided the design of photocatalysts. The TiO2/ Al2O3 heterojunction prepared using this method can be used as a material for semiconductor gas sensors detecting poisonous gases like CO2 at room temperature with high sensitivity and selectivity.

Electronic transport characterization of AlGaN∕GaN heterostructures using quantitative mobility spectrum analysis

Resistivity and Hall effect measurements in nominally undoped Al0.25Ga0.75N∕GaN heterostructures grown on sapphire substrate by metal-organic chemical vapor deposition are carried out as a function of temperature (20–350K) and magnetic field (0–1.5T). The measurement results are analyzed using the quantitative mobility spectrum analysis techniques. It is found that there is strong two-dimensional electron gas localization below 100K, while the thermally activated minority carriers with the activation energies of ∼58 and ∼218meV contribute to the electron transport at high temperatures.

Temperature-Dependent Barrier Characteristics of Inhomogeneous In/p-Si (100) Schottky Barrier Diodes

The current-voltage (I–V) characteristics of In/p-Si Schottky barrier diodes have been determined in the temperature range 100–300 K and have been interpreted based on the assumption of a Gaussian distribution of barrier heights due to barrier height inhomogeneities that prevail at the metal–semiconductor interface. The evaluation of the experimental I–V data reveals a decrease of zero-bias barrier height but an increase of ideality factor n with decreasing temperature. The inhomogeneities are considered to have Gaussian distribution with a mean zero-bias barrier height of 0.630 eV and standard deviation of 0.083 V at zero bias. Furthermore, the mean barrier height and the Richardson constant values were obtained to be 0.617 eV and 20.71 A K−2 cm−2, respectively, by means of the modified Richardson plot, ln (I0/T2)−(q2σs02/2k2T2) versus 1000/T.

Hydrogen discharges operating at atmospheric pressure in a semiconductor gas discharge system

Analyses of physical processes which initiate electrical breakdown and spatial stabilization of current and control it with a photosensitive cathode in a semiconductor gas discharge system (SGDS) are carried out in a wide pressure range up to atmospheric pressure p, interelectrode distance d and diameter D of the electrode areas of the semiconductor cathode. The study compares the breakdown and stability curves of the gas discharge in the planar SGDS where the discharge gap is filled with hydrogen and air in two cases. The impact of the ionizing component of the discharge plasma on the control of the stable operation of the planar SGDS is also investigated at atmospheric pressure. The loss of stability is primarily due to modification of the semiconductor-cathode properties on the interaction with low-energy hydrogen ions and the formation of a space charge of positive ions in the discharge gap which changes the discharge from Townsend to glow type. The experimental results show that the discharge current in H2 is more stable than in air. The breakdown voltages are measured for H2 and air with parallel-plane electrodes, for pressures between 28 and 760 Torr. The effective secondary electron emission (SEE) coefficient is then determined from the breakdown voltage results and compared with the experimental results. The influence of the SEE coefficient is stated in terms of the differences between the experimental breakdown law.

The effect of ultraviolet irradiation on the ultra-thin HfO2 based CO gas sensor

In this work, an effort has been made to fabricate ultrathin HfO2/Al2O3 sample by atomic layer deposition method for the fast detection of CO gas at room temperature. The effect of the operating temperature and the UV light on the gas sensing characteristics has been studied. We investigated the optimum operating temperature for the sample by sensing 25 ppm CO and CO2 gases from room temperature to 150 °C for 10 °C steps. The maximum response was obtained at 150 °C for both gases in the measurement temperature range. Also, the photoresponse measurements clearly show the effect of UV light on the sample. At room temperature, sensor showed superior response (14%) for 5 ppm CO gas. The response time of sensor is 6 s to 5 ppm CO gas concentration. The ultrathin HfO2 based sample shows acceptable gas sensitivity for 5 ppm CO gas at room temperature under UV light irradiation.

Novel multifunctional colloidal carbohydrate nanofiber electrolytes with excellent conductivity and responses to bone cancer cells.

This work presents a new approach to fabricating novel polymer nanofiber composites (NFCs) from water solution blends of PVA (hydrolyzed 89%)/ODA-MMT and Na-CMC/ODA-MMT nanocomposites as well as their folic acid (FA) incorporated modifications (NC-3-FA and NC-4-FA) through green electrospinning nanotechnology. The chemical and physical structures and surface morphology of the nanofiber composites were confirmed. Significant improvements in nanofiber morphology and size distribution of the NFC-3-FA and NFC-4-FA nanofibers with lower average means 110 and 113nm compared with those of NFC-1/NFC-2 nanofibers (270 and 323nm) were observed. The structural elements of polymer NFCs, particularly loaded partner NC-2, plays an important role in chemical and physical interfacial interactions, phase separation processing and enables the formation of nanofibers with unique morphology and excellent conductivity (NFC-3-FA 3.25×10(-9)S/cm and NFC-4-FA 8.33×10(-4)S/cm). This is attributed to the higher surface contact areas and multifunctional self-assembled supramacromolecular nanostructures of amorphous colloidal electrolytes. The anticancer activity of FA-containing nanofibers against osteocarcinoma cells were evaluated by cytotoxicity, apoptotic and necrotic analysis methods.

Fabrication and characterization of PVA/ODA-MMT-poly(MA-alt-1-octadecene)-g-graphene oxide e-spun nanofiber electrolytes and their response to bone cancer cells

This work presents a new approach to fabrication and characterization of novel polymer nanofiber electrolytes from intercalated PVA/ODA-MMT nanocomposite as a matrix polymer and encapsulated graphene oxide (GO) nanosheets with amphiphilic reactive copolymer as partner polymers using electrospinning method. The chemical and physical structures, surface morphology, thermal behaviors and electric conductivity of nanocomposites and nanofibers were investigated using analyses methods including FTIR, XRD, SEM, DSC-TGA and conductivity analysis. Significant improvements in nanofiber morphology and size distribution were observed when GO and reactive organoclay were incorporated as reinforcement fillers into various matrix/partner solution blends. The structural factors of matrix-partner polymer nanocomposite particles with higher zeta-potential play important roles in both chemical and physical interfacial interactions and phase separation processing and also lead to the formation of nanofibers with unique surface morphologies and good conductivities. The cytotoxic, necrotic and apoptotic effects of chosen nanofibers on osteocarcinoma cells were also investigated. These multifunctional, self-assembled, nanofibrous surfaces can serve as semi-conductive and bioactive platforms in various electrochemical and bio-engineering processes, as well as reactive matrices used for the immobilization of various biopolymer precursors.

Electron Transport in Ga-Rich InxGa1-xN Alloys

Resistivity and Hall effect measurements on n-type undoped Ga-rich InxGa1−xN (0.06≤x≤0.135) alloys grown by metal-organic vapour phase epitaxy (MOVPE) technique are carried out as a function of temperature (15–350 K). Within the experimental error, the electron concentration in InxGa1−xN alloys is independent of temperature while the resistivity decreases as the temperature increases. Therefore, InxGa1−xN (0.06≤x≤0.135) alloys are considered in the metallic phase near the Mott transition. It has been shown that the temperature-dependent metallic conductivity can be well explained by the Mott model that takes into account electron–electron interactions and weak localization effects.

Effect of Doping Materials on the Low-Level NO Gas Sensing Properties of ZnO Thin Films

In this study, undoped, Cu-doped, and Ni-doped ZnO thin films have been successfully prepared by successive ionic layer adsorption and reaction method. The structural, compositional, and morphological properties of the thin films are characterized by x-ray diffractometer, energy dispersive x-ray analysis (EDX), and scanning electron microscopy, respectively. Doping effects on the NO gas sensing properties of these thin films were investigated depending on gas concentration and operating temperature. Cu-doped ZnO thin film exhibited a higher gas response than undoped and Ni-doped ZnO thin film at the operating temperature range. The sensor with Cu-doped ZnO thin film gave faster responses and recovery speeds than other sensors, so that is significant for the convenient application of gas sensor. The response and recovery speeds could be associated with the effective electron transfer between the Cu-doped ZnO and the NO molecules.