S. Bhuyan

Capacitive, resistive and conducting characteristics of bismuth ferrite and lead magnesium niobate based relaxor electronic system

The ferroelectric relaxor based BFO–PMN [bismuth ferrite (BiFeO3; BFO) and lead magnesium niobate (PbMg1/3Nb2/3O3; PMN)] binary electronic system has been synthesized making use of the solid state chemical reaction technique. The capacitive, resistive and conducting characteristics of the prepared solid solutions [((PbxBi1−x)(Mg0.33xNb0.66xFe1−x)O3) with x = 0.1, 0.2, 0.3 and 0.4] have been studied along with their structural and morphological characteristics. It has been revealed that the dielectric behaviour of BFO–PMN is modified with the addition of PMN content. The nature of phase has also been changed from a general ferroelectric towards a typical relaxor. The comprehensive experimental impedance analysis substantiates the contributions of grain boundary including the grains in the resistive and capacitive characteristics. The prepared compounds illustrate non-Debye type of dielectric relaxation behaviour. The studied material may pave the way for formulation of electronic components.

Dielectric dispersion and impedance spectroscopy of yttrium doped BiFeO3-PbTiO3 electronic system

The dielectric dispersion and impedance spectroscopy of multiferroic bismuth ferrite (BFO; BiFeO3) and lead titanate (PT; PbTiO3) electro ceramics have been altered by doping chemically with Yttrium (Y3+). The distinctive structural study including morphology as well as electrical properties of Y3+ doped BFO-PT solid composite [(Pb0.9Bi.05Y0.05) (Fe0.1Ti0.9)O3] depicts several interesting results on structure-properties correlation. The development of single phase compound with tetragonal crystal coordination is predicted from X-ray diffraction (XRD). The micrograph substantiates the development of dense grains. The chemical content and composition of the prepared solid solution is determined using the energy dispersive X-ray (EDX) technique. The impedance spectroscopy shows the evidence of grain as well as grain boundary effects leading to the subsistence of negative temperature coefficient of resistance (NTCR) in this processed material. At lower temperature region, the ac conductivity of this compound rises with the frequency. The processed electronic compound illustrates non-Debye type electrical relaxation behaviour. The preliminary study of the prepared electronic material may provide some useful information for devise of electronic components as well as gadget.

Dielectric and impedance characteristics of Bi(Zn2/3Nb1/3)O3 electronic material

The capacitive, resistive and conducting characteristics of Bi(Zn2/3Nb1/3)O3 electronic material have been investigated experimentally. Detailed studies of frequency–temperature dependence of electrical parameters using impedance spectroscopy technique provide the experimental evidence of contributions of grain as well as grain boundary in the resistive and capacitive characteristics of the synthesized material. Temperature and frequency dependent ac conductivity of the compound provides the nature and conduction mechanism of the material studied. The compound illustrates its non-Debye type of dielectric relaxation behaviour. The preliminary study of the electronic material may provide some useful information for formulation of electronic components as well as gadget.

Temperature and frequency dependent dielectric and impedance characteristics of double perovskite Bi 2 MnCoO 6 electronic material

The temperature and field dependent capacitive as well as conducting characteristics of double perovskite electronic material (Bi2MnCoO6) have been investigated using dielectric and impedance spectroscopy techniques. The electronic material has been formulated by applying a high temperature solid state reaction based ceramic processing route. The formation of the desired sample material is confirmed with a monoclinic crystal system using room temperature X-ray diffraction analysis. The uniform grain distribution is predicted from the micrograph, and the stoichiometric chemical content of the solid solution is determined from energy dispersive X-ray technique. The acquaintance between micro structural study and frequency–temperature dependent electrical properties of the compound has revealed negative temperature coefficient of resistance behaviour. The prepared compound unveils non-Debye type relaxation. The studied compound presents important dielectric properties which substantiate the material propensity for formulation of electronic devices.

Excitation performance of fabricated PMN–BFO relaxor through electric field

The lead magnesium niobate (PMN; PbMg1/3Nb2/3O3) and bismuth ferrite (BFO; BiFeO3) electronic compound has been fabricated and its excitation through electric field has been experimentally investigated. The unveiled excellent material properties like frequency independent and temperature dependent high dielectric constant and low dielectric loss substantiate the relaxor behavior of the processed material. A parallel plate capacitor structure is designed in order to reveal the material’s excitation through the generated internal electric field which has also been affirmed. The experimental results exhibit the dependence of excitation intensity on the material properties, driving frequency, relative position and generated electric field strength. The intensity of excitation attains its peak when the driving frequency is synchronized with the mechanical resonant frequency of the fabricated relaxor dielectric component.