S. Bilge Ocak

The effective potential of squeezed spin states

Abstract Coherent spin states are considered through the spin operator representation in differential equation, which give quantum mechanical potentials. Squeezed spin states are defined through a canonical transformation. The defined concept of squeezed spin states has been applied to a spin system describing a magnetic system with S =1. The effective Schrodinger equation is obtained and the squeezed potential has been constructed for the model Hamiltonian. It is found that squeezing acts as a symmetry breaking process

Investigation of diode parameters using I–V and C–V characteristics of Al/maleic anhydride (MA)/p-Si structure

Al/maleic anhydride (MA)/p-Si metal–polymer–semiconductor (MPS) structures were prepared on p-Si substrate by spin coating. Device parameters of Al/MA/p-Si structure have been determined by means of capacitance–voltage (C–V) and conductance–voltage (G–V) measurements between 700 kHz and 1⋅5 MHz and current–voltage (I–V) measurements at 300 K. The parameters of diode such as the ideality factor, series resistance, barrier height (BH) and flat band barrier height were calculated from the forward bias I–V characteristics. The investigation of interface states that density and series resistance from C–V and G–V characteristics in Al/MA/p-Si device has been reported. The frequency dependence of the capacitance could be attributed to trapping states. Several important device parameters such as the BH ϕb, fermi energy (EF), diffusion voltage (VD), donor carrier concentration (ND) and space charge layer width (WD) for the device have been obtained between 700 kHz and 1⋅5 MHz. The I–V, C–V-f and G–V-f characteristics confirm that the parameters like the BH, interface state density (Dit) and series resistance (Rs) of the diode are strongly dependent on the electrical parameters in the MPS structures.

The Generalized PT-Symmetric Sinh-Gordon Potential Solvable within Quantum Hamilton–Jacobi Formalism

Abstract The generalized Sinh-Gordon potential is solved within quantum Hamiltonian Jacobi approach in the framework of PT symmetry. The quasi exact solutions of energy eigenvalues and eigenfunctions of the generalized Sinh-Gordon potential are found for n=0,1 states.

An investigation of the electrical properties of PbO based MOS-type different Schottky barrier diodes on a structure

The electrical properties PbO based MOS (metal-oxide semiconductor)-type different Schottky barrier diodes on an Al/PbO/p-Si structure have been investigated and done a comparisonin this study. Al/PbO/p-Si structures were fabricated and their current-voltage (I-V) characteristics were measured at room temperature and in the dark. We tried to obtain information about the structure by comparing the electrical properties of the seven diodes on the Al/PbO/p-Si structure. The electrical characteristic parameters such as saturation current, ideality factor, barrier height and series resistance of the seven Al/PbO/p-Si Schottky barrier diodes were investigated from the forward bias I-V characteristics by using thermionic emission theory. The experimental values of ideality factors for seven diodes have changed from 1.09 to 2.95. The series resistances seven diodes have changed from 1.18 kΩ to 3.20 kΩ by using dV/dln(I)-I characteristics. The barrier heights for seven diodes have changed from 0.64 eV to 0.74eV. The series resistances for seven diodes have changed from 1.41 kΩ to 3.38 kΩ.The electrical properties PbO based MOS (metal-oxide semiconductor)-type different Schottky barrier diodes on an Al/PbO/p-Si structure have been investigated and done a comparisonin this study. Al/PbO/p-Si structures were fabricated and their current-voltage (I-V) characteristics were measured at room temperature and in the dark. We tried to obtain information about the structure by comparing the electrical properties of the seven diodes on the Al/PbO/p-Si structure. The electrical characteristic parameters such as saturation current, ideality factor, barrier height and series resistance of the seven Al/PbO/p-Si Schottky barrier diodes were investigated from the forward bias I-V characteristics by using thermionic emission theory. The experimental values of ideality factors for seven diodes have changed from 1.09 to 2.95. The series resistances seven diodes have changed from 1.18 kΩ to 3.20 kΩ by using dV/dln(I)-I characteristics. The barrier heights for seven diodes have changed from 0.64 eV to 0.74eV. T...