S. Budak

Superlattice Multinanolayered Thin Films of SiO2/SiO2 + Ge for Thermoelectric Device Applications

Thermoelectric generators convert heat to electricity. Effective thermoelectric materials and devices have a low thermal conductivity and a high electrical conductivity. The performance of thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT = S2σT/K, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature, and K is the thermal conductivity. We have prepared 100 alternating layers of SiO2/SiO2+ Ge superlattice thin films using ion beam–assisted deposition for the thermoelectric generator device application. The 5 MeV Si ion bombardments were performed using the Center for Irradiation Materials’ Pelletron ion beam accelerator to form quantum dots and/or quantum clusters in the multinanolayer superlattice thin films to decrease the cross-plane thermal conductivity and increase the cross-plane Seebeck coefficient and cross-plane electrical conductivity. The thermoelectric and transport properties have been characterized for SiO2/SiO2+ Ge superlattice thin films.

Thermoelectric properties of SiO2/SiO2+CoSb multi-nanolayered thin films modified by MeV Si ions

We have fabricated the thermoelectric generator devices from 100 alternating layers of SiO2/SiO2+CoSb superlattice thin films using the ion beam–assisted deposition. Rutherford backscattering spectrometry was used for quantitative elemental analysis of Si, Co, and Sb in the multilayer films. The thin films were then modified by 5-MeV Si ion bombardments using the Alabama A&M University Pelletron ion beam accelerator. Quantum dots and/or clusters were produced in the nanolayered superlattice films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient, and the cross-plane electrical conductivity. We have characterized the thermoelectric generator devices before and after Si ion bombardments using the thermoelectric, optical, and surface characterization techniques. The optical absorption amplitude decreased when the first fluence of 1 × 1012 ions/cm2 was introduced from the value of 2.8 to about 1.9 at 200 nm. The figure of merit reached the maximum value of about 0.005 at the fluence of 1 × 1013 ions/cm2.

Characterization of gold nanodots arrangements in SiO2/SiO2+Au nanostructured metamaterials

Effective thermoelectric materials have a low thermal conductivity and a high electrical conductivity. For this study, we have prepared a thermoelectric generator device of SiO2/SiO2+Au multi-nano-layered thin film systems using ion beam-assisted deposition followed by 5 MeV Si ion bombardment. The ion bombardment causes the Au atoms to nucleate into metallic nanoclusters. However, as the kinetic energy of the Si ions decreases with the depth of the sample, so does the electronic stopping power responsible for the Au nucleation. This produces variations in the size and spacing of the nanoclusters. Here, we are investigating the effects of the size and arrangement variations within the device on the electrical and thermal transports within the system. We characterized the thin film system, using I–V characterization, conductance measurement, quasi-static capacitance, X-ray photoelectron spectroscopy, and photoluminescence spectroscopy.

Modification of Surface Morphology of UHMWPE for Biomedical Implants

Ultra High Molecular Weight Polyethylene (UHMWPE) samples were implanted with metal and metal-gas hybrid ions (Ag, Ag+N, C+H, C+H+Ar, Ti+O ) by using improved MEVVA Ion implantation technique [1,2] . An extraction voltage of 30 kV and influence of 1017 ions/cm2 were attempted in this experiment . to change their surface morphologies in order to understand the effect of ion implantation on the surface properties of UHMWPEs. Characterizations of the implanted samples with RBS , ATR - FTIR, spectra were compared with the un-implanted ones . Implanted and unimplanted samples were also thermally characterized by TGA and DSC. It was generally observed that C–H bond concentration seemed to be decreasing with ion implantation and the results indicated that the chain structure of UHMWPE were changed and crosslink density and polymer crystallinity were increased compared to unimplanted ones resulting in increased hardness. It was also observed that nano size cracks (approx.10nm) were significantly disappeared after Ag implantation, which also has an improved antibacterial effect . Contact angle measurements showed that wettability of samples increased with ion implantation. Results showed that metal and metal+gas hybrid ion implantation could be an effective way to improve the surface properties of UHMWPE to be used in hip and knee prosthesis.

MeV Si Ions Bombardment Effects on the Thermoelectric Properties of Si/Si+Ge Multi-Layer Superlttice Nanolayered Films

Effective thermoelectric materials have a low thermal conductivity and a high electrical conductivity. The performance of the thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT = S2σT/K, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature and K is the thermal conductivity. ZT can be increased by increasing S, increasing σ or decreasing K. MeV ion bombardment caused defects and disorder in the film and the grain boundaries of these nano-scale clusters increase phonon scattering and increase the chance of an inelastic interaction and phonon annihilation. We have prepared 100 alternating layers of Si/Si+Ge nanolayered superlattice films using the ion beam assisted deposition (IBAD). The 5 MeV Si ions bombardments have been performed using the AAMU Pelletron ion beam accelerator to make quantum clusters in the nanolayered superlattice films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity. We have characterized the thermoelectric thin films before and after Si ion bombardments as we measured the cross-plane Seebeck coefficient, the cross-plane electrical conductivity, and the cross-plane thermal conductivity for different fluences

Thermoelectric Generators of Sequentially Deposited Si/Si+Ge Nano-layered Superlattices

Effective thermoelectric materials have a low thermal conductivity and a high electrical conductivity. The performance of the thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT = S2sσ/ KTC, σ is the electrical conductivity T/KTC, where S is the Seebeck coefficient, T is the absolute temperature and KTC is the thermal conductivity. In this study we have prepared the thermoelectric generator device of Si/Si+Ge multi-layer superlattice films using the ion beam assisted deposition (IBAD). To determine the stoichiometry of the elements of Si and Ge in the grown multilayer films and the thickness of the grown multi-layer films Rutherford Backscattering Spectrometry (RBS) and RUMP simulation software package were used. The 5 MeV Si ion bombardments were performed to make quantum clusters in the multi-layer superlattice thin films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity. Keywords: Ion bombardment, thermoelectric properties, multi-nanolayers, Figure of merit.

Thermal Behaviour of W+C Ion Implanted Ultra High Molecular Weight Polyethylene (UHMWPE)

The aim of this work was to examine thermal behavior of the surface modified Ultra High Molecular Weight Poly Ethylene (UHMWPE ) in order to understand the effect of ion implantation on the properties of this polymer which is widely used especially for biomedical applications. UHMWPE samples were Tungsten and Carbon (W+C) hybrid ion implanted by using Metal Vapour Vacuum Arc (MEVVA) ion implantation technique with a fluence of 10 17 ions/cm2 and extraction voltage of 30 kV. Untreated and surface‐treated samples were investigated by Rutherford Back Scattering (RBS) Analysis, Attenuated Total Reflectance Fourier Transform Infrared (ATR‐FTIR) Spectrometry, Thermo Gravimetric Analysis (TGA) and Differential Scanning Calorimetry (DSC). This study has shown that ion implantation represents a powerful tool on modifying thermal properties of UHMWPE surfaces. This combination of properties can make implanted UHMWPE a preferred material for biomedical applications.

Structural and Thermal Characterization of Ti+O Ion Implanted UltraHigh Molecular Weight Polyethylene (UHMWPE)

In this work, Metal‐Gas Hybrid Ion Implantation technique was used as a tool for the surface modification of Ultra High Molecular Weight Polyethylene (UHMWPE). Samples were Ti+O ion implanted by using Metal‐Vapour Vacuum Arc (MEVVA) ion implanter to a fluence of 5×1016 ion/cm2 for each species and extraction voltage of 30 kV. Untreated and surface treated samples were investigated by Rutherford Back Scattering (RBS) Spectrometry, Attenuated Total Reflectance—Fourier Transform Infrared (ATR‐FTIR) Spectroscopy, Thermo Gravimetric Analysis (TGA) and Differential Scanning Calorimetry (DSC). Results indicate that Ti+O ion implantation can be applied on UHMWPE surfaces successfully. ATR‐FTIR spectra indicate that the C‐H concentration on the surface decreased after Ti+O implantation. Thermal characterization with TGA and DSC shows that polymeric decomposition temperature is shifted after ion implantation.

MeV Si Ions Bombardment Effects on SiO2/SiO2-ZrNiSn Nano-layered Thermoelectric Generator

We have deposited 50 nano-layers of 710 nm of SiO2/SiO2+ZrNiSn with a periodic structure consisting of alternating layers where each layer is about 14 nm thick. The purpose of this research is to generate nanolayers of nanostructures of ZrNiSn with SiO2 as host and as buffer layer using a combination of co-deposition and MeV ion bombardment taking advantage of the energy deposited in the MeV ions track to nucleate nanostructures. The performance of the thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT = S2σT/ĸ, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature and ĸ is the thermal conductivity. ZT can be increased by increasing S, increasing σ, or decreasing ĸ. The electrical and thermal properties of the layered structures were studied before and after bombardment by 5 MeV Si ions at seven different fluences ranging from 1014 to 1015 ions/cm2 in order to form nanostructures in layers of SiO2 containing few percent of ZrNiSn. Rutherford Backscattering Spectrometry (RBS) was used to monitor elemental analysis of the film.

Thermoelectric Properties of YbBiPt and YBiPt Thin Films

Monolayer thin films of YbBiPt and YBiPt have been produced with 560 nm and 394 nm thick respectively in house and their thermoelectric properties were measured before and after MeV ion bombardment. The energy of the ions were selected such that the bombarding Si ions stop in the silicon substrate and deposit only electronic energy by ionization in the deposited thin film. The bombardment by 5.0 MeV Si ions at various fluences changed the homogeneity as well as reducing the internal stress in the films thus affecting the thermal, electrical and Seebeck coefficient of thin films. The stoichiometry of the thin films was determined using Rutherford Backscattering Spectrometry, the thickness has been measured using interferometry and the electrical conductivity was measured using Van der Pauw method. Thermal conductivity of the thin films was measured using an in-house built 3ω thermal conductivity measurement system. Using the measured Seebeck coefficient, thermal conductivity and electrical conductivity we calculated the figure of merit (ZT). We will report our findings of change in the measured figure of merit as a function of bombardment fluence.