S.C. Chaurasia

Dry ashing of organic rich matrices with palladium for the determination of arsenic using inductively coupled plasma-mass spectrometry

A dry ashing procedure is developed for the determination of As in organic rich matrices such as wheat flour, lichen and tobacco leaves. The volatility of As during dry ashing is avoided by the addition of palladium nitrate [Pd(NO(3))(2)]. The recovery of both As(III) and As(V) is found to be near quantitative. The residue after dry ashing is dissolved in nitric acid (HNO(3)) and analysed by inductively coupled plasma-mass spectrometry (ICP-MS). The process blank and limit of detection (LOD) are 11 and 6.6 ng g(-1), respectively. The procedure is applied for the determination of As in certified reference materials namely wheat flour NIST SRM 1567a (National Institute of Standards and Technology Standard Reference Material), lichen BCR CRM 482 (Institute for Reference Materials, European Commission) and Virginia tobacco leaves CTA-VTL-2 (Poland Academy of Sciences). The results obtained by the present procedure are in good agreement with the certified values and also determined after complete dissolution of samples using closed microwave digestion.

Procedure for determination of trace ions in boric acid by matrix volatilization–ion chromatography

A method for determination of anions and cations in boric acid is proposed by matrix volatilization. The boric acid matrix was eliminated as trimethyl borate ester in a vapour phase matrix elimination (VPME) system using a mixture of glycerol-methanol. In this VPME system, in situ reagent purification, sample decomposition and digest evaporation were achieved in a single step. Trace anions were separated on anion-exchange column (IonPac AS17) by an isocratic elution with 15 mM sodium hydroxide and the cations on a cation-exchange column (IonPac CS12) by 20 mM hydrochloric acid as eluents. Method detection limits (3sigma) for most ions ranged from 0.3 to 8 ng/g (ppb). Recovery experiments combined with comparison of data obtained by other methods were employed to verify the accuracy of the proposed method. Application of the method to determine trace levels of anions like acetate, oxalate, sulfate, phosphate and cations such as lithium, sodium, potassium, magnesium and calcium in two highly pure grades of boric acid using ion chromatography is demonstrated.

Determination of trace phosphorus in zirconium-niobium alloy and Zircaloy by UV-vis spectrophotometry.

A spectrophotometric method has been developed for the determination of traces of phosphorus in zirconium based alloys (Zr-2.5Nb and Zircaloy). It is achieved by selective fluoride complexation controlled by boric acid. The samples were dissolved in HF and fluoro-complexes of the matrices were formed by maintaining the concentration of HF while the excess HF was controlled by boric acid. After the formation of phosphomolybdate, extracted into n-butyl acetate, ion-associated with crystal violet and the absorbance was measured at 582 nm. The results obtained by this procedure were in close agreement with the certified reference material (CRM) values and further these values were compared with the values determined by Glow Discharge-Quadrupole Mass Spectrometry (GD-QMS). The potential interferences like fluoride, silicon, arsenic(V), niobium, titanium, tantalum, etc., were tolerable to large level. LOD (3 s) was found to be 0.055 mg kg(-1) with a precision (R.S.D.) of 2-3% and molar absorptivity was 2.7x10(5) L mol(-1) cm(-1).

Determination of indium in high purity antimony by electrothermal atomic absorption spectrometry (ETAAS) using boric acid as a modifier.

The use of boric acid as a modifier for the determination of trace amount of indium in high purity antimony by electrothermal atomic absorption is described. It was found that the negative influence of the hydrofluoric acid, used for the digestion could not be eliminated by using stabilized temperature platform furnace (STPF) alone. Due to the high dissociation energy (D(0)=506kJmol(-1)) of indium fluoride, it is difficult to dissociate in the gas phase and hence is lost. In presence of HF (used for the dissolution of antimony), the universal Pd-Mg modifier does not work satisfactorily. Additionally, rising corrosion and reduced tube lifetime were observed when the acid digested (HF-HNO(3)) antimony solution was injected in to the platform. Improvement in platform life and elimination of interferences were achieved by the addition of boric acid as a chemical modifier together with ruthenium coating of the platform. Corrosive changes of the transversely heated graphite atomizer (THGA) platform surface were examined by scanning electron microscopy. The standard addition method was applied. A characteristic mass of 36pg was obtained. The detection limit of the proposed method is around 0.04mugg(-1). The developed method was applied to the determination of indium in real samples. The data obtained by this method were in good agreement with those obtained by ICP-MS.

Determination of trace impurities in chromium matrices after separation from Cr(III) using the oxalate form of anion exchanger

A method has been developed for the separation and determination of a set of 11 impurities from chromium matrices using oxalate form of Amberlite IRA 93. Due to slower kinetics of formation of the anionic complex, Cr(III) passed in the effluent while impurities forming strong complexes rapidly are retained on the exchanger. The adsorption of impurities of interest is found to be uniform in pH range 2-6. The adsorbed impurities are eluted with 2 mol l(-1) HNO(3) and determined by inductively coupled plasma-optical emission spectrometer (ICP-OES). The percentage recoveries of Al, Bi, Cd, Co, Cu, Fe, Mn, Ni, Pb, Ga and Zn are in the range 88-101% and separation of matrix is >99.9%. The method has been applied for the analysis of two samples namely CrCl(3).6H(2)O and Cr. The R.S.D. of the method is 5-6% at >10 microg g(-1) level and approximately 15% at <1 microg g(-1) level. The process blank values are in the range sub-microg g(-1) and detection limits are in ng g(-1) range.