S. Calnan

Influence of Chemical Composition and Structure in Silicon Dielectric Materials on Passivation of Thin Crystalline Silicon on Glass

In this study, various silicon dielectric films, namely, a-SiOx:H, a-SiNx:H, and a-SiOxNy:H, grown by plasma enhanced chemical vapor deposition (PECVD) were evaluated for use as interlayers (ILs) between crystalline silicon and glass. Chemical bonding analysis using Fourier transform infrared spectroscopy showed that high values of oxidant gases (CO2 and/or N2), added to SiH4 during PECVD, reduced the Si-H and N-H bond density in the silicon dielectrics. Various three layer stacks combining the silicon dielectric materials were designed to minimize optical losses between silicon and glass in rear side contacted heterojunction pn test cells. The PECVD grown silicon dielectrics retained their functionality despite being subjected to harsh subsequent processing such as crystallization of the silicon at 1414 °C or above. High values of short circuit current density (Jsc; without additional hydrogen passivation) required a high density of Si-H bonds and for the nitrogen containing films, additionally, a high N-H bond density. Concurrently high values of both Jsc and open circuit voltage Voc were only observed when [Si-H] was equal to or exceeded [N-H]. Generally, Voc correlated with a high density of [Si-H] bonds in the silicon dielectric; otherwise, additional hydrogen passivation using an active plasma process was required. The highest Voc ∼ 560 mV, for a silicon acceptor concentration of about 10(16) cm(-3), was observed for stacks where an a-SiOxNy:H film was adjacent to the silicon. Regardless of the cell absorber thickness, field effect passivation of the buried silicon surface by the silicon dielectric was mandatory for efficient collection of carriers generated from short wavelength light (in the vicinity of the glass-Si interface). However, additional hydrogen passivation was obligatory for an increased diffusion length of the photogenerated carriers and thus Jsc in solar cells with thicker absorbers.

Zinc oxide films grown by galvanic deposition from 99% metals basis zinc nitrate electrolyte

The use of relatively low purity zinc nitrate for electrochemical deposition of compact ZnO films is attractive for large scale production because of the cost saving potential. ZnO films were grown on SnO2:F and magnetron sputtered ZnO:Al templates using a three electrode potentiostatic system in galvanic mode. The electrolyte consisted of a 0.1 M zinc nitrate solution (either 99.998% or 99% purity) and 1 mM aluminium nitrate for extrinsic doping, when required. Moderate deposition rates of up to 0.9 nm s−1 were achieved on ZnO:Al templates with lower rates of up to 0.5 nm s−1 on SnO2:F templates. Observation of SEM images of the films revealed a wall-like morphology whose lateral thickness (parallel to the substrate) reduced as aluminium was added to the system either in the electrolyte or from the substrate. However, pre-deposition activation of the template by applying a negative voltage (approximately −2 V) allowed the growth of compact films even for the low purity electrolyte. The optical band gap energy of intrinsically doped films was lower than that of the Al doped films. The composite electrical conductivity of all the films studied, as inferred from sheet resistance and Hall effect measurements of the ZnO/template stacks was much less than that of the uncoated templates. A strong E2 (high) mode at around 437 cm−1 was visible in the Raman spectra for most films confirming the formation of ZnO. However, both the Raman modes and XRD reflections associated with wurtzite ZnO diminished for the Al doped films indicating a high level of mainly oxygen related defects. Based on these data, further studies are underway to improve the doping efficiency of aluminium, the crystalline structure and thus the conductivity of such films.

Light Scattering and Current Enhancement for Microcrystalline Silicon Thin-Film Solar Cells on Aluminium-Induced Texture Glass Superstrates with Double Texture

Microcrystalline silicon (μc-Si:H) thin-film solar cells are processed on glass superstrates having both micro- and nanoscale surface textures. The microscale texture is realised at the glass surface, using the aluminium-induced texturing (AIT) method, which is an industrially feasible process enabling a wide range of surface feature sizes (i.e., 700 nm–3 μm) of the textured glass. The nanoscale texture is made by conventional acid etching of the sputter-deposited transparent conductive oxide (TCO). The influence of the resulting “double texture” on the optical scattering is investigated by means of atomic force microscopy (AFM) (studying the surface topology), haze measurements (studying scattering into air), and short-circuit current enhancement measurements (studying scattering into silicon). A predicted enhanced optical scattering efficiency is experimentally proven by a short-circuit current enhancement of up to 1.6 mA/cm2 (7.7% relative increase) compared to solar cells fabricated on a standard superstrate, that is, planar glass covered with nanotextured TCO. Enhancing the autocorrelation length (or feature size) of the AIT superstrates might have the large potential to improve the μc-Si:H thin-film solar cell efficiency, by reducing the shunting probability of the device while maintaining a high optical scattering performance.

3D optical modeling of thin-film a-Si/μc-Si tandem solar cells with random textured interfaces using FEM

We present a FEM based simulator for 3D rigorous optical modeling of a-Si/μc-Si tandem thin-film solar cells with randomly textured layer interfaces. Our focus lies on a detailed analysis of the numerical error.