S. Chandramohan

Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern

The future of solid-state lighting relies on how the performance parameters will be improved further for developing high-brightness light-emitting diodes. Eventually, heat removal is becoming a crucial issue because the requirement of high brightness necessitates high-operating current densities that would trigger more joule heating. Here we demonstrate that the embedded graphene oxide in a gallium nitride light-emitting diode alleviates the self-heating issues by virtue of its heat-spreading ability and reducing the thermal boundary resistance. The fabrication process involves the generation of scalable graphene oxide microscale patterns on a sapphire substrate, followed by its thermal reduction and epitaxial lateral overgrowth of gallium nitride in a metal-organic chemical vapour deposition system under one-step process. The device with embedded graphene oxide outperforms its conventional counterpart by emitting bright light with relatively low-junction temperature and thermal resistance. This facile strategy may enable integration of large-scale graphene into practical devices for effective heat removal.

Work-function-tuned multilayer graphene as current spreading electrode in blue light-emitting diodes

This letter reports on the implementation of multilayer graphene (MLG) as a current spreading electrode in GaN-based blue light-emitting diodes. We demonstrate two facile strategies to maneuver the electrical coupling between p-GaN layer and MLG. Using a work-function-tuned MLG and a thin gold (Au) metal interlayer, the current spreading and thus the device forward voltage are considerably improved. We attribute these improvements to the diminution in work function difference between p-GaN and MLG, the decrease of specific contact resistance, and the enhancement in the conductivity of MLG film as a result of doping. In addition, rapid thermal annealing at elevated temperature is found to provide additional pathway for enhanced carrier injection.

Implantation-assisted Co-doped CdS thin films: Structural, optical, and vibrational properties

This paper reports on structural, optical, vibrational, and morphological properties of cobalt-doped CdS thin films, prepared by 90 keV Co+ implantation at room temperature. In this work, we have used cobalt concentration in the range of 0.34–10.8 at. %. Cobalt doping does not lead to the formation of any secondary phase, either in the form of metallic clusters or impurity complexes. However, with increasing cobalt concentration a decrease in the optical band gap, from 2.39 to 2.26 eV, is observed. This reduction is addressed on the basis of band tailing due to the creation of localized energy states in association with Urbach energy calculations. In addition, implantation gives rise to grain growth and increase in the surface roughness. Size and shape fluctuations of individual CdS grains, at higher fluences, give rise to inhomogeneity in strain. The results are discussed in the light of ion-matter interaction in the keV regime.

Structural and optical properties of Mn-doped CdS thin films prepared by ion implantation

We report on structural and optical properties of Mn-doped CdS thin films prepared by 190 keV Mn-ion implantation at different temperatures. Mn-ion implantation in the fluence range of 1×1013–1×1016 ions cm−2 does not lead to the formation of any secondary phase. However, it induces structural disorder, causing a decrease in the optical band gap. This is addressed on the basis of band tailing due to creation of localized energy states and Urbach energy calculations. Mn-doped samples exhibit a new band in their photoluminescence spectra at 2.22 eV, which originates from the d-d (T41→A61) transition of tetrahedrally coordinated Mn2+ ions.

Impact of Interlayer Processing Conditions on the Performance of GaN Light-Emitting Diode with Specific NiOx/Graphene Electrode

This paper reports on the evaluation of the impact of introducing interlayers and postmetallization annealing on the graphene/p-GaN ohmic contact formation and performance of associated devices. Current-voltage characteristics of the graphene/p-GaN contacts with ultrathin Au, Ni, and NiO(x) interlayers were studied using transmission line model with circular contact geometry. Direct graphene/p-GaN interface was identified to be highly rectifying and postmetallization annealing improved the contact characteristics as a result of improved adhesion between the graphene and the p-GaN. Ohmic contact formation was realized when interlayer is introduced between the graphene and p-GaN followed by postmetallization annealing. Temperature-dependent I-V measurements revealed that the current transport was modified from thermionic field emission for the direct graphene/p-GaN contact to tunneling for the graphene/metal/p-GaN contacts. The tunneling mechanism results from the interfacial reactions that occur between the metal and p-GaN during the postmetallization annealing. InGaN/GaN light-emitting diodes with NiO(x)/graphene current spreading electrode offered a forward voltage of 3.16 V comparable to that of its Ni/Au counterpart, but ended up with relatively low light output power. X-ray photoelectron spectroscopy provided evidence for the occurrence of phase transformation in the graphene-encased NiO(x) during the postmetallization annealing. The observed low light output is therefore correlated to the phase change induced transmittance loss in the NiO(x)/graphene electrode. These findings provide new insights into the behavior of different interlayers under processing conditions that will be useful for the future development of opto-electronic devices with graphene-based electrodes.

Improving the graphene electrode performance in ultra-violet light emitting diode using silver nanowire networks

This paper reports a systematic study on the characteristics of silver nanowires (AgNWs) coated graphene and its application as a transparent current spreading electrode in ultra-violet light emitting diodes (UV-LEDs). The optimized values of optical transmittance and sheet resistance of AgNWs covered graphene were 87.7% at 375 nm and 50 ± 5 Ω/sq, respectively. Upon applying the AgNWs on graphene electrode, the UV-LED exhibited uniform bright light emission with a reduction in the forward voltage and about four-fold increase in the electroluminescence intensity. We attribute the observed performance improvements to a reduction in the sheet and contact resistances.

Performance evaluation of GaN light-emitting diodes using transferred graphene as current spreading layer

This study elucidates the correlation among conductivity of graphene and interface aspects in GaN light-emitting diodes (LEDs). Using a multilayer graphene of low sheet resistance, it is demonstrated that graphene alone can make ohmic contact with p-GaN without necessitating additional interlayer. Large-area blue LED with relatively low contact resistance in the order of 10−2 ohm-cm2 and improved forward voltage of 3.2 ± 0.1 V was realized irrespective of the use of the interlayer. The results from parallel evaluation experiments performed by varying the layer numbers of graphene with ultrathin NiOx interlayer revealed that the poor lateral conductivity of monolayer or few layer graphene can be well compensated by the interlayer. A combination of three layer graphene and NiOx offered device with enhanced electro-optical performance. But the Schottky barrier associated with the inadequate adhesion of transferred graphene dominates all the benefits and becomes a major bottleneck preventing the formation of ...

Enhanced air-cavity effect of periodically oriented embedded air protrusions for high-efficiency InGaN/GaN light-emitting diodes

We report on the development of periodically oriented embedded air protrusion (EAP) structures at the GaN-sapphire interface in InGaN/GaN LEDs. A specific SiO(2) mask pattern and a simple wet etching process were utilized for the fabrication of EAP structures. A strong coupling between closely proximate air cavities and the multiple quantum wells promoted spontaneous emission due to the high-index contrast at the GaN-air interface. As a result, the light output power of the EAP LED was 2.2 times higher than that of a conventional LED at an injection current of 20 mA.

The role of graphene formed on silver nanowire transparent conductive electrode in ultra-violet light emitting diodes

This paper reports a highly reliable transparent conductive electrode (TCE) that integrates silver nanowires (AgNWs) and high-quality graphene as a protecting layer. Graphene with minimized defects and large graphene domains has been successfully obtained through a facile two-step growth approach. Ultraviolet light emitting diodes (UV-LEDs) were fabricated with AgNWs or hybrid electrodes where AgNWs were combined with two-step grown graphene (A-2GE) or conventional one-step grown graphene (A-1GE). The device performance and reliability of the UV-LEDs with three different electrodes were compared. The A-2GE offered high figure of merit owing to the excellent UV transmittance and reduced sheet resistance. As a consequence, the UV-LEDs made with A-2GE demonstrated reduced forward voltage, enhanced electroluminescence (EL) intensity, and alleviated efficiency droop. The effects of joule heating and UV light illumination on the electrode stability were also studied. The present findings prove superior performance of the A-2GE under high current injection and continuous operation of UV LED, compared to other electrodes. From our observation, the A-2GE would be a reliable TCE for high power UV-LEDs.

Tailored CVD graphene coating as a transparent and flexible gas barrier.

The chemical vapor deposition (CVD) method to obtain tailored graphene as a transparent and flexible gas barrier has been developed. By separating nucleation step from growth, we could reduce early graphene nucleation density and thus induce better stitching between domain boundaries in the second growth step. Furthermore, two step growth in conjunction with electrochemical polishing of Cu foils achieved large graphene domains and improved graphene quality with minimized defects. The performance of resulting graphene as a gas barrier was superior to the graphene obtained by one-step growth on polished or unpolished Cu foils. The CVD graphene reported here could open up the possibility for exploring graphene-based gas barrier due to the minimized density of defect area.