S. Delice

Thermoluminescence in gallium sulfide crystals: an unusual heating rate dependence

Trap centres in gallium sulfide single crystals have been investigated by thermoluminescence measurements in the temperature range of 10–230 K. A curve-fitting method was utilized to evaluate the activation energies (52, 200 and 304 meV) of the revealed three trap centres. The heating rate dependence and trap distribution of the peaks have been studied using experimental techniques based on various heating rates and various illumination temperatures, respectively. An anomalous heating rate dependence of the high-temperature peak was found by carrying out TL measurements with various heating rates between 0.2 and 1.0 K/s. This behaviour was explained on the basis of a semi-localized transition model. Whereas normal heating rate dependence was established for low-temperature peak, that is, the TL intensity of the glow curve decreases and the peak maximum temperature shifts to higher values with increasing the heating rate. Moreover, a quasi-continuous trap distribution with the increase of activation energies from 52 to 90 meV, from 200 to 268 meV and from 304 to 469 meV for the observed three different traps was established employing the various illumination temperatures method.

Thermoluminescence properties of Tl2Ga2S3Se layered single crystals

The trap center(s) in Tl2Ga2S3Se single crystals has been investigated from thermoluminescence (TL) measurements in the temperature range of 10–300 K. Curve fitting, initial rise, and peak shape methods were applied to observed TL glow curve to evaluate the activation energy, capture cross section, and attempt-to-escape frequency of the trap center. One trapping center has been revealed with activation energy of 16 meV. Moreover, the characteristics of trap distribution have been studied using an experimental technique based on different illumination temperature. An increase of activation energy from 16 to 58 meV was revealed for the applied illumination temperature range of 10–25 K.

Optical properties of TlGaxIn1-xSe2-layered mixed crystals (0.5 ≤ x ≤ 1) by spectroscopic ellipsometry, transmission, and reflection measurements

The layered semiconducting TlGaxIn1-xSe2-mixed crystals (0.5 ≤ x ≤ 1) were studied for the first time by spectroscopic ellipsometry measurements in the 1.2–6.2 eV spectral range at room temperature. The spectral dependence of the components of the complex dielectric function, refractive index, and extinction coefficient were revealed using an optical model. The interband transition energies in the studied samples were found from the analysis of the second-energy derivative spectra of the complex dielectric function. The effect of the isomorphic cation substitution (indium for gallium) on critical point energies in TlGaxIn1-xSe2 crystals was established. Moreover, the absorption edge of TlGaxIn1-xSe2 crystals have been studied through the transmission and reflection measurements in the wavelength range of 500–1100 nm. The analysis of absorption data revealed the presence of both optical indirect and direct transitions. It was found that the energy band gaps decrease with the increase of indium content in the studied crystals.

Thermoluminescence study on TlGaSSe layered single crystals

The defect centers in TlGaSSe single crystals have been investigated by performing thermoluminescence (TL) measurements with various heating rates between 0.5 K/s and 1.0 K/s in the temperature range of 10–180 K. The TL spectra, with peak maximum temperatures at 39 K and 131 K, revealed the existences of two defect levels. Curve fitting, initial rise and peak shape methods were used to determine the activation energies of two defect centers. The experimental results also showed that the trapping process was dominated by second-order kinetics for the trap related with low temperature peak while the general order (mixed order) kinetics was dominant for the trap donated to high temperature peak. Furthermore, heating rate dependences and traps distributions were studied for two defect centers separately. Thermal quenching effect dominates the behavior of these defects as the heating rate is increased. Also, quasi-continuous distributions were established with the increase of the activation energies from 16 meV to 27 meV and from 97 meV to 146 meV for the traps associated with the peaks observed at low and high temperatures, respectively.

Low-temperature thermoluminescence study of GaSe:Mn layered single crystals

Abstract Mangan doped GaSe single crystals have been studied by thermoluminescence measurements performed with various heating rates between 0.4 and 1.0 K/s in the temperature range of 10−300 K. Thermoluminescence spectra exhibited four distinguishable peaks having maximum temperatures at 47, 102, 139 and 191 K revealing the existence of trapping levels in the crystals. Curve fitting and initial rise methods were applied to observed peaks to determine the activation energies of four trapping levels. Capture cross-sections of each level were also evaluated using the obtained energy values. Moreover, heating rate dependencies of the obtained peaks were investigated. It was shown that increase in the heating rate resulted in the decrease in thermoluminescence intensity and shift of the peak maximum temperatures to higher values. Discrete, single trap behaviour was established for acceptor level related with the peak at 191 K by analysing the sequentially obtained peaks with different stopping temperatures between 15 and 65 K.

Thermoluminescence characteristics of Tl4GaIn3S8layered single crystals

The properties of trapping centres in – as grown – Tl4GaIn3S8 layered single crystals were investigated in the temperature range of 10–300 K using thermoluminescence (TL) measurements. TL curve was analysed to characterize the defects responsible for the observed peaks. Thermal activation energies of the trapping centres were determined using various methods: curve fitting, initial rise and peak shape methods. The results indicated that the peak observed in the low-temperature region composed of many overlapped peaks corresponding to distributed trapping centres in the crystal structure. The apparent thermal energies of the distributed traps were observed to be shifted from ~12 to ~125 meV by increasing the illumination temperature from 10 to 36 K. The analysis revealed that the first-order kinetics (slow retrapping) obeys for deeper level located at 292 meV.