S. E. Stoltz

Core level and valence band studies of layered Ti3SiC2 by high resolution photoelectron spectroscopy

The ternary compund Ti3SiC2 is a prominent representative of a new class of layered ceramics whose extraordinary physical properties has attracted much attention in recent years. Ti3SiC2 is electrically and thermally highly conductive, elastically rigid, lightweight, and maintains its strength to high temperatures. It is furthermore damage tolerant and oxidation resistant. We have studied fractured surfaces of coarse-grained Ti3SiC2 by means of photoelectron spectroscopy at the MAX-lab synchrotron radiation facility in Lund, Sweden. High-resolution C 1s, Si 2p, Ti 2p, Ti 3s and Ti 3p core-level spectra are reported and interpreted in terms of crystallographic and electronic structure. Valence band spectra confirm the validity of recent band calculations.

Rb intercalation of 1 T − TaSe 2 studied by photoelectron spectroscopy

The electronic structure of the layered compound

Photoelectron microscopy study of the intercalation process in the Cs/4Hb?TaS2 system

1T\ensuremath{-}{\mathrm{TaSe}}_{2},

金属の相互置換による不整合層化合物(PbS) 1.13 TaS 2 の安定化

before and after deposition of Rb, was studied by angle-resolved photoelectron spectroscopy. Core level spectra verified that the deposited Rb intercalated, with only small amounts remaining on the surface. Valence band spectra revealed major changes in the electronic structure, but good agreement with calculations was found for the bands of Se

Stabilization of the Misfit Layer Compound (PbS)1.13TaS2 by Metal Cross Substitution

4p

Investigation of surface structure related features in the multiple-scattering simulations of photoelectron diffraction of 3C-SiC(001)-c(4 x 2)

character. In contrast, the Ta

Rb deposition on TiSe2 and TiTe2 at 100 K and at room temperature studied by photoelectron spectroscopy

5d

Atomic origin of the scanning tunneling microscopy images of charge-density-waves on 1T-TaSe2

bands were modified by the presence of a strong charge density wave, which was significantly affected by the Rb intercalation. The intercalation also caused a metal to semiconductor transition, although possibly not completely. The observed changes can be attributed to charge transfer, weakened coupling between the layers and reduced hybridization between Se

X-ray photoelectron diffraction investigation of the cleavage plane in IT-transition metal dichalcogenides

4p

Surface resonance on the (6 root 3 x 6 root 3)-R30 degrees-reconstructed 5 ML Au on (root 3 x root 3)-R30 degrees-4H-SiC(0001)

and Ta