S. H. Chih

ZnSe/ZnSeTe Superlattice Nanotips

The authors report the growth of ZnSe/ZnSeTe superlattice nanotips on oxidized Si(100) substrate. It was found the nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from the ZnSe/ZnSeTe superlattice nanotips were much larger than that observed from the homogeneous ZnSeTe nanotips. Furthermore, it was found that activation energies for the ZnSe/ZnSeTe superlattice nanotips with well widths of 16, 20, and 24 nm were 76, 46, and 19 meV, respectively.

Growth and Photoelectric Properties of Twinned ZnSe Te Nanotips

The authors report the growth of high density ZnSe0 .9 Te 0 .1 nanotips by molecular beam epitaxy and the fab- rication of ZnSeTe nanotip photodetector. It was found that the as-grown ZnSe0 .9 Te 0 .1 nanotips were twinned with alternative multidomains and mixture of cubic zinc-blende/hexagonal wurtzite phases. With 5-V applied bias, it was found that photocurrent to dark current contrast ratio of the fabricated photodetector was larger than 700.

ZnCdSe nanowires grown by molecular beam epitaxy

The authors report the growth of high density ternary Zn1−xCdxSe (x=0.1,0.3) nanowires on an oxidized Si(100) substrate by molecular beam epitaxy and the fabrication of ZnCdSe nanowire photodetectors. It was found that the as-grown ZnCdSe nanowires exhibited mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that the average diameters for the Zn0.9Cd0.1Se and Zn0.7Cd0.3Se nanowires were 36.0 and 70.6 nm, respectively, while the average lengths of Zn0.9Cd0.1Se and Zn0.7Cd0.3Se nanowires were both around 1 μm. Furthermore, it was found that the turn-on and turn-off time constants of the fabricated photodetectors were both less than 3 s.

Growth of ZnSe[sub 1−x]Te[sub x] Nanotips and the Fabrication of ZnSe[sub 1−x]Te[sub x] Nanotip-Based Photodetector

We reported the growth of high density ternary ZnSeTe nanotips on oxidized Si(100) substrate and the fabrication of the ZnSeTe nanotip-based photodetector. The as-grown ZnSeTe nanotips exhibited a mixture of cubic zinc blende and hexagonal wurtzite structures. The average length of the ZnSeTe nanotips was 0.9 μm. With 5% Te incorporation, the 20 K photoluminescence peak redshifted by 27 nm. Furthermore, a photocurrent to dark current contrast ratio was larger than 40 for the fabricated photodetector.

ZnSe/ZnCdSeTe Superlattice Nanotips

The authors report the growth of quaternary ZnCdSeTe nanotips and ZnSe/ZnCdSeTe superlattice nanotips on oxidized Si(1 0 0) substrate. It was found that the nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from the ZnSe/ZnCdSeTe superlattice nanotips were much larger than that observed from the homogeneous ZnCdSeTe nanotips. Furthermore, it was found that activation energies for the ZnSe/ZnCdSeTe superlattice nanotips with well widths of 12, 16, 20, and 24 nm were 189, 205, 292, and 240 meV, respectively.

Growth and photoelectric properties of twinned ZnSe1

The authors report the growth of high density ZnSe0 .9 Te 0 .1 nanotips by molecular beam epitaxy and the fab- rication of ZnSeTe nanotip photodetector. It was found that the as-grown ZnSe0 .9 Te 0 .1 nanotips were twinned with alternative multidomains and mixture of cubic zinc-blende/hexagonal wurtzite phases. With 5-V applied bias, it was found that photocurrent to dark current contrast ratio of the fabricated photodetector was larger than 700.

Growth and Photoelectric Properties of Twinned ZnSe

The authors report the growth of high density ZnSe0 .9 Te 0 .1 nanotips by molecular beam epitaxy and the fab- rication of ZnSeTe nanotip photodetector. It was found that the as-grown ZnSe0 .9 Te 0 .1 nanotips were twinned with alternative multidomains and mixture of cubic zinc-blende/hexagonal wurtzite phases. With 5-V applied bias, it was found that photocurrent to dark current contrast ratio of the fabricated photodetector was larger than 700.

_{\bm {1-x}}

We reported the growth of high density ternary ZnSeTe nanotips on oxidized Si(100) substrate and the fabrication of the ZnSeTe nanotip-based photodetector. The as-grown ZnSeTe nanotips exhibited a mixture of cubic zinc blende and hexagonal wurtzite structures. The average length of the ZnSeTe nanotips was 0.9 μm. With 5% Te incorporation, the 20 K photoluminescence peak redshifted by 27 nm. Furthermore, a photocurrent to dark current contrast ratio was larger than 40 for the fabricated photodetector.

Te

We reported the growth of high density ternary ZnSeTe nanotips on oxidized Si(100) substrate and the fabrication of the ZnSeTe nanotip-based photodetector. The as-grown ZnSeTe nanotips exhibited a mixture of cubic zinc blende and hexagonal wurtzite structures. The average length of the ZnSeTe nanotips was 0.9 μm. With 5% Te incorporation, the 20 K photoluminescence peak redshifted by 27 nm. Furthermore, a photocurrent to dark current contrast ratio was larger than 40 for the fabricated photodetector.