S. Jena

Optical properties and laser damage threshold of HfO 2 –SiO 2 mixed composite thin films

HfO(2)-SiO(2) mixed composite thin films have been deposited on fused silica substrate by co-evaporation of HfO(2) and SiO(2) through the reactive electron-beam evaporation technique. The composition-dependent refractive index and the absorption coefficient have been analyzed using different effective medium approximation (EMA) models in order to evaluate the suitability of these models for such mixed composite thin films. The discrepancies between experimentally determined and EMA-computed values are explained through microstructural and morphological evolutions observed in these mixed composite films. Finally, the dependence of the laser damage threshold as a function of silica content has been investigated, and the improved laser-induced damage threshold for films having more than 80% silica content has been explained through the defect-assisted multiphoton ionization process.

Effects of neutron irradiation on optical and chemical properties of CR-39: Potential application in neutron dosimetry.

Effects of high-dose neutron irradiation on chemical and optical properties of CR-39 were studied using FTIR (Fourier Transform Infrared) and UV-vis (Ultraviolet-Visible) spectroscopy. The primary goal was to find a correlation between the neutron dose and the corresponding changes in the optical and chemical properties of CR-39 resulted from the neutron irradiation. The neutrons were produced by bombarding a thick Be target with 22-MeV protons. In the FTIR spectra, prominent absorbance peaks were observed at 1735cm(-1) (C=O stretching), 1230cm(-1)(C-O-C stretching), and 783cm(-1)(=C-H bending), the intensities of which decreased with increasing neutron dose. The optical absorbance in the visible range increased linearly with the neutron dose. Empirical relations were established to estimate neutron doses from these optical properties. This technique is particularly useful in measuring high doses, where track analysis with an optical microscope is difficult because of track overlapping.

Photo-induced optical bleaching in Ge12Sb25S63 amorphous chalcogenide thin films: effect of 532 nm laser illumination

The photo-induced effects of Ge12Sb25S63 films illuminated with 532 nm laser light are investigated from transmission spectra measured by FTIR spectroscopy. The material exhibits photo-bleaching (PB) when exposed to band gap light for a prolonged time in a vacuum. The PB is ascribed to structural changes inside the film as well as surface photooxidation. The amorphous nature of thin films was detected by x-ray diffraction. The chemical composition of the deposited thin films was examined by energy dispersive x-ray analysis (EDAX). The refractive indices of the films were obtained from the transmission spectra based on an inverse synthesis method and the optical band gaps were derived from optical absorption spectra using the Tauc plot. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple-DiDomenico model. It was found that the mechanism of the optical absorption follows the rule of the allowed non-direct transition. Raman and x-ray photoelectron spectra (XPS) were measured and decomposed into several peaks that correspond to the different structural units which support the optical changes.

Annealing effects on microstructure and laser-induced damage threshold of HfO 2 /SiO 2 multilayer mirrors.

HfO2/SiO2 periodic multilayer high reflection mirrors have been prepared by a reactive electron-beam evaporation technique. The deposited mirrors were annealed in the temperature range from 300°C to 500°C. The effects of annealing on optical, microstructural, and laser-induced damage characteristics of the mirrors have been investigated. The high reflection band of the mirror shifts toward a shorter wavelength with increasing annealing temperature. As-deposited and annealed mirrors show polycrystalline structure with a monoclinic phase of HfO2. Crystalinity and grain size increase upon annealing. The laser-induced damage threshold (LIDT) has been assessed using a 532 nm pulsed laser at a pulse width of 7 ns. The LIDT value of the multilayer mirror increases from 44.1  J/cm2 to 77.6  J/cm2 with annealing up to 400°C. The improvement of LIDT with annealing is explained through oxygen vacancy defects as well as grain-size-dependent thermal conductivity. Finally, the observed laser damage morphology, such as circular scalds and ablated multilayer stacks with terrace structure, are analyzed.

Oblique angle deposition of HfO2 thin films: quantitative assessment of indentation modulus and micro structural properties

Oblique angle deposition of oxides is used routinely for fabricating inhomogeneous thin films with proven correlation between refractive index and the angle of deposition. Inhomogeneous layers play a key role in the development of rugate interference devices for photo-physical applications. Such obliquely deposited thin films show high porosity which is a critical issue related to their density, mechanical and environmental stability. Hence, it is important to investigate elastic properties of such film in addition to optical properties. Using atomic force acoustic microscopy, we report indentation modulus of HfO2 thin films deposited at angles 80, 68, 57, 40 and 0 degree with normal to substrate plane on Si (100) substrate. Such films were measured to have indentation modulus of 42 GPa for extreme obliquely deposited film and indentation modulus increases with decrease in angle to become highest with a value of 221 GPa for normally deposited films. We also report microstructural properties and density of films measured by FESEM and grazing angle x-ray reflectometer, respectively. Both indentation modulus and density depict a nonlinearly decreasing behavior with angle of deposition. Variation of density is again confirmed from FESEM cross-sectional morphology.

Optical properties of electron beam evaporated ZrO2:10 %SiO2 thin films: dependence on structure

ZrO2:10%SiO2 thinfilms have been deposited on fused silica substrate by reactive electron beam co-evaporation technique at different oxygen partial pressure. The structural analysis shows tetragonal phase with residual tensile stress in the films. The intensity of the tetragonal t(110) phase are found increasing with increasing oxygen pressure. The optical band gap is found increasing from 5.06 eV to 5.28 eV because of increasing crystalinity of monoclinic phase, while the film grain size remains almost constant with increase of oxygen pressure, concludes that the crystallite or grain size has no effect on the optical properties of the films. The dispersion of the refractive index is discussed in terms of single oscillator Wimple-DiDomenico model. The dispersion energy parameter better known as structural order parameter are found increasing with the intensity of t(110) phase. It is observed that films having higher value of order parameter show lower surface roughness which concludes that the local microstructure ordering can predominantly influence the grain morphology which in turn can lead to better surface for higher value of order parameter.

Achieving omnidirectional photonic band gap in sputter deposited TiO2/SiO2 one dimensional photonic crystal

The multilayer structure of TiO2/SiO2 (11 layers) as one dimensional photonic crystal (1D PC) has been designed and then fabricated by using asymmetric bipolar pulse DC magnetron sputtering technique for omnidirectional photonic band gap. The experimentally measured photonic band gap (PBG) in the visible region is well matched with the theoretically calculated band structure (ω vs. k) diagram. The experimentally measured omnidirectional reflection band of 44 nm over the incident angle range of 0°-70° is found almost matching within the theoretically calculated band.

Influence of thermal annealing on optical and structural properties change in Bi-doped Ge30Se70 thin films

ABSTRACT The effect of annealing on the structural and optical properties of thermally evaporated Ge30Se70 and Ge30Se60Bi10 thin films is reported in this paper. The prepared films were thermally annealed at 250°C to optimize the optical properties which can be used for the optical device fabrication. X-ray diffraction study revealed no structural transformation whereas the surface morphology changed as observed from scanning electron microscopy. The optical properties of the deposited and annealed films have been investigated by using a UV–VIS–NIR spectrophotometer in the wavelength range of 400–1100 nm. The optical band gap of the Ge30Se70 annealed film is found to be increased while the energy gap of the Bi-doped annealed Ge30Se60Bi10 thin film decreased which is explained by the chemical disorderness, defect states and density of localized states in the mobility gap. The Tauc parameter and Urbach energy which measure the degree of disorder changed with the annealing process. The transmittivity increases and the absorption power decreases in the Ge30Se70 annealed film, whereas the reverse effect is noticed for the annealed Ge30Se60Bi10 thin film. The irreversible nature of this change can be useful for optical recording purposes.

Laser induced optical bleaching in Ge12Sb25S63 chalcogenide thin film

Photo induced effects of Ge12Sb25S63 films illuminated with 532 nm laser light is investigated from transmission spectra measured by FTIR spectroscopy. The material exhibit photo bleaching (PB) when exposed to band gap laser for a prolonged time in vacuum. The PB is ascribed to structural changes inside the film as well as surface photo oxidation. The amorphous nature of thin films was detected by X-ray diffraction. The chemical composition of the deposited thin films was examined by Energy Dispersive X-ray Analysis (EDAX). The refractive indices of the films were obtained from the transmission spectra based on inverse synthesis method, and the optical band gaps were derived from optical absorption spectra using the Tauc plot. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple–DiDomenico model. It was found that, the mechanism of the optical absorption follows the rule of the allowed non-direct transition. Raman spectra analysis also supports the optical changes.