S. Kawabuchi

High emission current double-gated field emitter arrays

Recently, various types of the field emitter arrays (FEAs) with focusing gate were investigated to realize the focusing electron beam. However, it is difficult to realize the high emission current density at the focusing operation. So we investigated to realize the high emission current density at the focusing operation.

Fabrication of field emitter array using focused ion and electron beam induced reaction

A 30 keV dual beam system with focused ion and electron beams has been used to develop a fast fabrication process of field emitter arrays (FEAs). The gate opening was fabricated by reactive focused ion beam etching. Pt cathode tips were deposited through gate opening using electron beam induced chemical reaction. Pt tips fabricated in the over-etched Si FEA showed field emission. A prototype of a nanometer-sized FEA was fabricated using a dual beam technique with FIB etching and electron beam induced deposition.

Laser cleaning of field emitter arrays for enhanced electron emission

The effect of laser irradiation on the electron emission efficiency of field emitter arrays has been investigated as a function of wavelength using different harmonics of a diode-pumped Nd:YLF laser. While irradiation in the infrared or visible range did not induce any observable change in the emission behavior, ultraviolet laser irradiation, even at a lower fluence compared to infrared or visible, resulted in a significant increase of the emission efficiency, revealing that the photodecomposition of organic contaminants is the main mechanism for cleaning. During laser irradiation, the emission current increases gradually, approaching a saturation level as the surface is cleaned.

Electron emission from gated silicide field emitter arrays

Silicidation of the top surface of Si tips with a Nb gate structure has been carried out to improve the emission behavior of Si field emitter arrays (FEAs). A Pt layer with a thickness of 5–10 nm was deposited through the gate opening and annealed at 850 °C. The electron emission was enhanced by a factor of 10 and the average emission per tip was 3.5 μA for a 10×10 FEA. Fowler–Nordheim plots indicated the decrease in work function after silicidation.

Effect of laser irradiation on electron emission from Si field emitter arrays

Ultraviolet (UV) laser lights were irradiated on Si field emitter arrays before and during electron emission to investigate the surface cleaning effect of laser light irradiation. UV light irradiation for 2–10 min before electron emission in a vacuum resulted in enhanced electron emission by 50%, which gradually decreased after further aging. Laser light irradiation during electron emission could induce enhanced electron emission by a factor of 2.4 due to photoinduced carrier generation and surface cleaning, and higher electron emission by a factor of 2 than the initial emission was observed even after laser light irradiation and prolonged aging for 20 h.

Effect of gas ambient on improvement in emission behavior of Si field emitter arrays

Gas ambient emission has been applied in various gas species such as air, H2, 0,, and Ar at Torr to gated Si field emitter arrays (FEAs) to improve the emission behavior. The electron emission from the FEAs was enhanced by a factor of up to 10 during or after gas ambient emission with H,, O,, and Ar, while the improvement was not observed by a process with air. Fowler-Nordheim plots indicated a drastic change in slope only for H , processes, in which hydrogen atoms would adsorb to Si tip surfaces. An emission pattem with a four-fold symmetry was observed for a single-tip emitter after hydrogen ambient emission, indicating the tip sui

Thin film multilayer substrate, manufacturing method thereof, and liquid crystal display having thin film multilayer substrate

ace crystallinity after gas ambient emission.