S. Labat

Methodology for studying strain inhomogeneities in polycrystalline thin films during in situ thermal loading using coherent x-ray diffraction

Coherent x-ray diffraction is used to investigate the mechanical properties of a single grain within a polycrystalline thin film in situ during a thermal cycle. Both the experimental approach and finite element simulation are described. Coherent diffraction from a single grain has been monitored in situ at different temperatures. This experiment offers unique perspectives for the study of the mechanical properties of nano-objects.

Dislocation storage in single slip-oriented Cu micro-tensile samples: new insights via X-ray microdiffraction

Synchrotron X-ray microdiffraction was used to characterize the deformation structure of single crystalline Cu micro-tensile specimens which were oriented for single slip. The 3-µm thick samples were strained in situ in a scanning electron microscope (SEM). Electron microscopy observations revealed glide steps at the surface indicating single slip. While the slip steps at the surface must have formed by the predominant activation of the primary glide system, analysis of Laue peak streaking directions revealed that, even at low strains, dislocations had been activated and stored on an unpredicted slip system. Furthermore, the µLaue scans showed that multiple slip takes over at a later state of deformation.

Inversion Domain Boundaries in GaN Wires Revealed by Coherent Bragg Imaging

Interfaces between polarity domains in nitride semiconductors, the so-called Inversion Domain Boundaries (IDB), have been widely described, both theoretically and experimentally, as perfect interfaces (without dislocations and vacancies). Although ideal planar IDBs are well documented, the understanding of their configurations and interactions inside crystals relies on perfect-interface assumptions. Here, we report on the microscopic configuration of IDBs inside n-doped gallium nitride wires revealed by coherent X-ray Bragg imaging. Complex IDB configurations are evidenced with 6 nm resolution and the absolute polarity of each domain is unambiguously identified. Picoscale displacements along and across the wire are directly extracted from several Bragg reflections using phase retrieval algorithms, revealing rigid relative displacements of the domains and the absence of microscopic strain away from the IDBs. More generally, this method offers an accurate inner view of the displacements and strain of interacting defects inside small crystals that may alter optoelectronic properties of semiconductor devices.

Copper crystals on the (11\bf{\bar{2}}0) sapphire plane: orientation relationships, triple line ridges and interface shape equilibrium

The orientation relationships (ORs) of copper crystals on a documentclass[12pt]{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} begin{document}

Combined coherent x-ray micro-diffraction and local mechanical loading on copper nanocrystals

(11bar{2}0)

Reactor for nano-focused x-ray diffraction and imaging under catalytic in situ conditions

end{document} sapphire substrate equilibrated at 1253 K are presented. They barely depend on the procedures used in sample preparation, i.e. dewetting of a copper film in the liquid state or in the solid state. The most frequent OR found is Cu(111) || Al2O3documentclass[12pt]{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} begin{document}

Interfacial structure in Ñ111Ö Au:Ni multilayers investigated by anomalous x-ray diffraction

(11bar{2}0)