S. Maricot

All-optical tunability of InGaAsP/InP microdisk resonator by infrared light irradiation

We report the optical characterization of an InP structure constituted by waveguides coupled to microcavity disk resonators. The lateral waveguide confinement is obtained by deep reactive ion etching through the guiding layer. We demonstrate the possibility of tuning optically the resonance wavelength into the illuminating disk resonator. We obtained a blueshift of 3 nm by laser irradiation at 980 nm corresponding to a photoinduced change in the effective refractive index of 6 x 10(-3). The InP structure behaves as a tunable optical demultiplexer.

Substrate Mode-Integrated SPR Sensor

We present the design, implementation and characterisation of an integrated surface plasmon resonance (SPR) biosensor chip involving diffractive optical coupling elements avoiding the need of prism coupling. The integrated sensor chip uses the angular interrogation principle and includes two diffraction gratings and the SPR sensing zone. The theoretical design is presented as well as the fabrication process. Experimental results (response of a reference water droplet and phosphate-buffered saline/water kinetic) are presented and compared with those obtained with the classical Kretschmann prism coupling setup. We believe that this prism-free architecture is perfectly suitable for low-cost and reproducible SPR biochemical sensor chips since the sensing zone can be functionalised as any other one.

Integrated prism-free coupled surface plasmon resonance biochemical sensor

We present the design, implementation and characterization of an integrated surface plasmon resonance biosensor chip involving diffractive optical coupling elements avoiding the need of prism coupling. The integrated sensor chip uses the angular interrogation principle and includes two diffraction gratings and the SPR sensing zone. The theoretical design is presented as well as the fabrication procedure. Experimental results, using reference index fluids, are compared to theoretical predictions and prism coupling experimental results. We believe that this architecture is perfectly suitable for low cost and reproducible SPR biochemical sensor chips since the sensing zone can be functionalized as any other one.

Wide electrical tunability of a GaInAsP/InP microdisk resonator

We report on the characterization of an InP/InGaAsP-material-based microdisk resonator optical filter. The originality here is constituted by the use of a localized control electrode that is used for the tuning of the resonance wavelength of the filter via the injection of a driving current. Tuning of the resonance wavelength close to 8 nm has been experimentally achieved for a drive current of 80 mA.

Optical switch using InP optical wire technology

We report on a new type of optical switch based on submicron structures and present the results obtained on the first nanophotonics based optical switch. First, we present results obtained on passive components that are required in an optical switch or switching matrix: straight waveguides, bend waveguides and Y junctions. Measured propagation loss are lower than 1dB/mm for waveguides wider than 1&mgr;m. Excess bending loss is 1dB for curvature radius as small as 30&mgr;m. Loss due to branching angle in a Y junction is 2dB for angle as wide as 20°. Optical switch design is based on two dissymmetric DOS like active junctions; theoretical crosstalk is 28dB, 14dB for each junction. We present the technological process to realize this active component. Finally, we report on the first characterization of a single Y junction a crosstalk of 11dB.

InP photodetectors for millimeter wave applications based on edge- coupled heterojunction phototransistors

In this paper, we present first experimental results obtained on two 1 and three terminal edge-coupled InP/InGaAs heterojunction phototransistors showing that these devices seem very promising for microwave and millimeter wave applications.

Ultracompact optical filter based on a stub resonator in GaInAsP/InP optical wire technology

We report on the fabrication and characterization of a very compact filtering structure based on a resonant stub fabricated using optical wire technology in the InP material line. The stub length is close to 1.6 microm and has been designed to get a resonance wavelength close to 1550 nm. The characterization showed a resonance frequency at 1520 nm with a 12 dB resonance peak.

III-V monolithic resonant photoreceiver on silicon substrate for long-wavelength operation

The first demonstration of fabrication of a monolithic photoreceiver using selective growth and lattice mismatch heteroepitaxies is presented. The photoreceiver includes a GaInAs/GaAs M.S.M. photodetector, a GaAs MESFET and a serial inductor which achieves a resonant effect. A dielectric mask was used to selectively grow the GaInAs/GaAs heteroepitaxies on the GaAs epilayers which, themselves, have been grown on a silicon substrate. In comparison with a PIN photodiode loaded with a 50 Omega resistor, approximately 10 dB gain has been obtained at 7 GHz.