S. Münch

Time resolved microphotoluminescence studies of single InP nanowires grown by low pressure metal organic chemical vapor deposition

The authors report optical studies of InP nanowires (NWs) grown by metal organic chemical vapor deposition. By means of low temperature microphotoluminescence experiments, the authors determined the optical properties of as-grown NWs. The emission of individual NWs is characterized by small linewidths as low as 2.3meV. Blueshifts of the NW emission energy between 25 and 56meV with respect to bulk InP are related to radial carrier confinement in nanowires with diameters between 15 and 50nm. Time resolved investigations reveal a low surface recombination velocity of 6×102cm∕s and indicate thermally activated nonradiative surface recombination above approximately 20K.The authors report optical studies of InP nanowires (NWs) grown by metal organic chemical vapor deposition. By means of low temperature microphotoluminescence experiments, the authors determined the optical properties of as-grown NWs. The emission of individual NWs is characterized by small linewidths as low as 2.3meV. Blueshifts of the NW emission energy between 25 and 56meV with respect to bulk InP are related to radial carrier confinement in nanowires with diameters between 15 and 50nm. Time resolved investigations reveal a low surface recombination velocity of 6×102cm∕s and indicate thermally activated nonradiative surface recombination above approximately 20K.

Quantum dot micropillar lasers

Laser emission from a low number of InGaAs quantum dots embedded in optically and electrically pumped high-Q micropillar laser structures will be presented. The talk will focus on the demonstration of high-β low threshold lasing with threshold currents below 10µA and single quantum dot controlled gain modulation under optical excitation.

Quantum dot microlasers

Laser emission from a low number of InGaAs quantum dots embedded in optically and electrically pumped high-Q micropillar laser structures will be presented. The talk will focus on the demonstration of high-β low threshold lasing with threshold currents below 10µA and single quantum dot controlled gain modulation under optical excitation.

Time resolved micro-photoluminescence studies of as-grown and surface passivated InP-nanowires grown by low pressure MOVPE

We present optical studies of single InP nanowires. The nanowires show small emission linewidths as low as 2.3 meV and a low surface recombination velocity. HF passivation results in a strong increase of PL intensity.

Time-Resolved Luminescence of Epitaxial InP Nanowires on (111)Si

We observe a biexponential photoluminescence decay process of as-grown InP nanowires on a (111) silicon substrate. The decay characteristics can be explained through the effects of surface states.

Time-Resolved Spectroscopy of Epitaxial InP Nanowires

We report time-resolved photoluminescence measurements on epitaxial (111) InP nanowires up to 110 K. The observed decay times increase with longer emission wavelengths, indicating the importance of surface effects on narrow InP wires.