S. N. Grigorov

Quantum size effects in PbSe quantum wells

In PbSe epitaxial thin films grown by thermal evaporation on KCl(001) substrates and covered with an EuS protective layer, oscillatory dependences of the galvanomagnetic and thermoelectric properties (electrical conductivity σ, the Hall coefficient RH, charge carrier mobility μ, and the Seebeck coefficient S) on the PbSe layer thickness d (3<d<200 nm) were observed at room temperature. Oscillations of the transport properties are associated with quantum size effects due to electron confinement in the PbSe quantum wells.

Quantum-size effects in n-type bismuth thin films

Oscillatory thickness dependences of the electrical conductivity, Hall coefficient, charge carrier mobility, and Seebeck coefficient were obtained at room temperature for n-type thin Bi films (d=3–300 nm) fabricated by the thermal evaporation of a bismuth crystal in a vacuum and deposition on mica substrates at 380 K. We attribute this oscillatory behavior to quantum-size effects, which are observable when the electron mean-free path and Fermi wave length exceed the film thickness d.

Oscillatory behaviour of the transport properties in PbTe quantum wells

Oscillatory behaviour was detected in the dependences of the transport properties (electrical conductivity, Hall coefficient, charge carrier mobility, Seebeck coefficient and thermoelectric power factor) on the PbTe layer thickness d (d = 2–200 nm) in (001) KCl/PbTe/EuS quantum well (QW) structures at room temperature. The non-monotonic character of these dependences is attributed to quantum size effects, which manifest themselves in PbTe QWs at sufficiently small values of d. The positions of the extrema in the thickness dependences of the transport properties shift with changing electron concentration in PbTe QWs.

Influence of oxidation on the transport properties of IV–VI-thin films

Abstract The effect of oxidation at room temperature on the thickness dependences of transport properties of IV–VI (PbS, PbSe, PbTe) thin films was studied. The effect of charge carrier concentration on the character of these dependences in n-PbTe thin films was detected. The regularities in the behavior of IV–VI thin films exposed to air were established. The experimental results are interpreted within the framework of models taking into consideration the presence of compensating acceptor states created by oxygen on the film surface.