S. Oh
University of Illinois at Urbana–Champaign
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Publication
Featured researches published by S. Oh.
Physical Review B | 2003
K. D. Osborn; D. J. Van Harlingen; Vivek Aji; Nigel Goldenfeld; S. Oh; James N. Eckstein
We report on a systematic investigation of the critical fluctuations in the complex conductivity of epitaxially grown Bi 2 Sr 2 CaCu 2 O 8 + δ films for T≤T c using a two-coil inductive technique at zero applied field. We observe the static three-dimensional (3D) XY critical exponent in the superfluid density near T c . Linear scaling analysis close to the critical temperature yields a dynamic critical exponent of z2.0 for small drive currents, but nonlinear effects are seen to be important. At T c , a nonlinear scaling analysis also yields a 3D dynamic exponent of z=2.0′0.1.
Physical Review Letters | 2002
Shashank Misra; S. Oh; D. J. Hornbaker; T. DiLuccio; James N. Eckstein; Ali Yazdani
We have used a scanning tunneling microscope to demonstrate that a single CuO2 plane can form a stable and atomically ordered layer at the surface of Bi(2)Sr(2)CaCu(2)O(8+delta). In contrast to previous studies on high-T(c) surfaces, the CuO2-terminated surface exhibits a strongly suppressed tunneling conductance at low voltages. We consider a number of different explanations for this phenomena and propose that it may be caused by how the orbital symmetry of the CuO2 planes electronic states affects the tunneling process.
Physical Review Letters | 2002
Shashank Misra; S. Oh; D. J. Hornbaker; T. DiLuccio; James N. Eckstein; Ali Yazdani
We have used a scanning tunneling microscope to demonstrate that a single CuO2 plane can form a stable and atomically ordered layer at the surface of Bi(2)Sr(2)CaCu(2)O(8+delta). In contrast to previous studies on high-T(c) surfaces, the CuO2-terminated surface exhibits a strongly suppressed tunneling conductance at low voltages. We consider a number of different explanations for this phenomena and propose that it may be caused by how the orbital symmetry of the CuO2 planes electronic states affects the tunneling process.
Physical Review Letters | 2002
S. Misra; S. Oh; D. J. Hornbaker; T. DiLuccio; James N. Eckstein; Ali Yazdani
We have used a scanning tunneling microscope to demonstrate that a single CuO2 plane can form a stable and atomically ordered layer at the surface of Bi(2)Sr(2)CaCu(2)O(8+delta). In contrast to previous studies on high-T(c) surfaces, the CuO2-terminated surface exhibits a strongly suppressed tunneling conductance at low voltages. We consider a number of different explanations for this phenomena and propose that it may be caused by how the orbital symmetry of the CuO2 planes electronic states affects the tunneling process.
Physical Review Letters | 2002
Shashank Misra; S. Oh; D. J. Hornbaker; T. DiLuccio; James N. Eckstein; Ali Yazdani
We have used a scanning tunneling microscope to demonstrate that a single CuO2 plane can form a stable and atomically ordered layer at the surface of Bi(2)Sr(2)CaCu(2)O(8+delta). In contrast to previous studies on high-T(c) surfaces, the CuO2-terminated surface exhibits a strongly suppressed tunneling conductance at low voltages. We consider a number of different explanations for this phenomena and propose that it may be caused by how the orbital symmetry of the CuO2 planes electronic states affects the tunneling process.
Physical Review B | 2005
L. Rotkina; S. Oh; James N. Eckstein; Slava V. Rotkin
Physical Review Letters | 2002
S. Oh; Seong Jin Koh; Kentaro Kyuno; Gert Ehrlich
Physical Review B | 2002
Shashank Misra; S. Oh; D. J. Hornbaker; T. DiLuccio; James N. Eckstein; Ali Yazdani
Physical Review B | 2002
S. Oh; Kentaro Kyuno; Seong Jin Koh; Gert Ehrlich
Physical Review B | 2003
S. Oh; Kentaro Kyuno; S. C. Wang; Gert Ehrlich