Network


Latest external collaboration on country level. Dive into details by clicking on the dots.

Hotspot


Dive into the research topics where S. Ohkouchi is active.

Publication


Featured researches published by S. Ohkouchi.


Applied Physics Express | 2009

Investigation of the Spectral Triplet in Strongly Coupled Quantum Dot–Nanocavity System

Yasutomo Ota; Naoto Kumagai; S. Ohkouchi; Masayuki Shirane; Masahiro Nomura; Satomi Ishida; Satoshi Iwamoto; Shinichi Yorozu; Yasuhiko Arakawa

We experimentally investigated the excitation power dependence of a strongly coupled quantum dot (QD)–photonic crystal nanocavity system by photoluminescence measurements. At a low excitation power regime, we observed a vacuum Rabi doublet emission at the QD–cavity resonance condition. With increasing excitation power, in addition to the doublet, a third emission peak appeared. This observed spectral change is unexpected from conventional atomic cavity quantum electrodynamics. The observations can be attributed to featured pumping processes in the semiconductor QD–cavity system.


Japanese Journal of Applied Physics | 2013

Enhancement of Valence Band Mixing in Individual InAs/GaAs Quantum Dots by Rapid Thermal Annealing

Edmund Harbord; Yasutomo Ota; Y. Igarashi; Masayuki Shirane; Naoto Kumagai; S. Ohkouchi; Satoshi Iwamoto; Shinichi Yorozu; Yasuhiko Arakawa

We measure polarization resolved photoluminescence from excitonic complexes in tens of single InAs/GaAs quantum dots (QDs) over a wide range of energies in two samples: one as-grown, the other subjected to rapid thermal annealing (RTA). Using the linear polarization of the X+ emission as a probe of the valence band mixing (VBM), we find that RTA enhances QD VBM, attributed to the increase in QD height. We complement our measurements with 8-band kp calculations, which suggest the increase in height on annealing is responsible for this enhancement.


Journal of Physics: Conference Series | 2010

Neutralization of positively charged excitonic state in single InAs quantum dot by Si delta doping

Naoto Kumagai; S. Ohkouchi; Masayuki Shirane; Y. Igarashi; Masahiro Nomura; Y. Ota; Shinichi Yorozu; Satoshi Iwamoto; Yasuhiko Arakawa

Positively charged excitonic state in single InAs quantum dot (QD) has been neutralized by Si delta doping and the optical properties of the fabricated samples are characterized by micro-photoluminescence measurements (μ-PL) at low temperature. An InAs QD sample having dominant emissions from positively charged excitonic states is prepared for a reference. By optimizing Si delta doping conditions, positively charged QDs are neutralized successfully and distinctive emissions from neutral exciton and biexciton from single QDs are achieved. For excessive doping condition, μ-PL spectra show optical degradation of lowering of peak intensity and broadening of peak width as doping concentration increases.


Physical Review B | 2010

Spin dynamics of excited trion states in a single InAs quantum dot

Y. Igarashi; Masayuki Shirane; Y. Ota; Masahiro Nomura; Naoto Kumagai; S. Ohkouchi; Akihiro Kirihara; S. Ishida; Satoshi Iwamoto; Shinichi Yorozu; Yasuhiko Arakawa


Physica Status Solidi (c) | 2011

Effects of growth temperature of partial GaAs cap on InAs quantum dots in In-flush process for single dot spectroscopy

Naoto Kumagai; S. Ohkouchi; Masayuki Shirane; Y. Igarashi; Masahiro Nomura; Yasutomo Ota; Shinichi Yorozu; Satoshi Iwamoto; Yasuhiko Arakawa


Physica E-low-dimensional Systems & Nanostructures | 2010

Charged and neutral biexciton–exciton cascade in a single quantum dot within a photonic bandgap

Masayuki Shirane; Y. Igarashi; Yasutomo Ota; Masahiro Nomura; Naoto Kumagai; S. Ohkouchi; Akihiro Kirihara; S. Ishida; Satoshi Iwamoto; Shinichi Yorozu; Yasuhiko Arakawa


Journal of Crystal Growth | 2011

New method to isolate and distribute photoluminescence emissions from InAs quantum dots over a wide-wavelength range

S. Ohkouchi; Naoto Kumagai; Masayuki Shirane; Y. Igarashi; Masahiro Nomura; Yasutomo Ota; Shinichi Yorozu; Satoshi Iwamoto; Yasuhiko Arakawa


Journal of Crystal Growth | 2013

Shape evolution of low density InAs quantum dots in the partial capping process by using As2 source

S. Ohkouchi; Naoto Kumagai; Katsuyuki Watanabe; Satoshi Iwamoto; Yasuhiko Arakawa


Journal of Crystal Growth | 2013

Rim formation on non-elongated InAs quantum dots grown by partial cap and annealing process at low temperature

Naoto Kumagai; S. Ohkouchi; Katsuyuki Watanabe; Satoshi Iwamoto; Yasuhiko Arakawa


The Japan Society of Applied Physics | 2012

Spin pumping InAs/GaAs QDs: controlling linear and circular polarization

E. Harbord; Y. Ota; Masayuki Shirane; Y. Igarashi; Naoto Kumagai; S. Ohkouchi; Satoshi Iwamoto; S. Yorosu; Y. Arakawa

Collaboration


Dive into the S. Ohkouchi's collaboration.

Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar

Y. Ota

University of Tokyo

View shared research outputs
Top Co-Authors

Avatar
Researchain Logo
Decentralizing Knowledge