S. P. Patil

Effect of bismuth oxide thick film overlay on microstrip patch antenna

Purpose – The purpose of this paper is to report the effect of bismuth oxide thick films of various thicknesses on the X band (8‐12 GHz) response of Ag thick film microstrip rectangular patch antenna.Design/methodology/approach – The effect of bismuth oxide thick film overlay of different thickness on Ag thick film microstrip rectangular patch antenna was investigated in the X band (8‐12 GHz). The change in the resonance frequency, amplitude, band width, quality factor, and input impedance of the antenna were studied. Using the resonance frequency the permittivity and conductivity of bismuth oxide thick film was measured.Findings – Thickness of Bi2O3 thick film overlay dependent changes in the patch antenna characteristics is obtained. The resonance frequency shifts to higher frequency end due to overlay. The input impedance decreases due to the overlay. The dielectric constant of bismuth oxide thick film calculated from shift in resonance frequency shows thickness dependent values.Originality/value – The...

Microwave studies of thermally oxidized vacuum evaporated bismuth thin films on alumina

The bismuth thin films of various thicknesses (100nm-550nm) were deposited on alumina substrate by vacuum evaporation technique. These films were thermally oxidized in air at three different temperatures (125°C, 150°C, and 175°C). The films were characterized by XRD and SEM. X-ray diffraction studies shows dominant -Bi2O3 crystal structure. Surface morphology shows granular shaped particles of Bi2O3 on alumina substrate. Microwave properties were studied in the X band (8-12 GHz) using waveguide setup. The Bismuth oxide thin film showed higher microwave transmittance in the 10 to 10.8GHz range and lower reflectance. The dielectric constant and impedance at 12 GHz was measured using waveguide slotted section. The microwave dielectric constant of these Bi2O3 thin films varied from 17 to 46 at 12 GHz and was dependent on thickness and oxidation temperature

Properties of magnesium oxide and magnesium oxide‐bismuth oxide mixed thick film

Purpose – The purpose of this paper is to study properties of magnesium oxide and mixed magnesium oxide‐bismuth oxide thick films for application in tuned devices.Design/methodology/approach – The effect of magnesium oxide and mixed magnesium oxide‐bismuth oxide thick films overlay of different thickness on Ag thick film microstrip rectangular patch antenna was investigated in the X band (8‐12 GHz). Using Ag thick film microstrip rectangular patch antenna the thick and mixed thick films was characterized by microwave properties such as resonance frequency, amplitude, bandwidth, quality factor and input impedance. Using the resonance frequency the permittivity of magnesium oxide and mixed magnesium oxide‐bismuth oxide thick films was measured.Findings – Cubic structure of single magnesium oxide and monoclinic structure of bismuth oxide was present in mixed thick film. Also the morphology of single thick films was maintained in mixed thick film of magnesium oxide‐bismuth oxide. Due to overlay magnesium oxid...

Perturbation of Ag thick film microstrip ring resonator due to superstrate Ni0.6Co0.4AgyMn2−yO4 ceramics

The Ag concentration dependent microwave dielectric properties of Ni0.6Co0.4AgyMn2−yO4 (0.1≤y≤0.5) ceramic in bulk and thick film form were investigated in the 13GHz to 18GHz range by using perturbation of electromagnetically coupled Ag thick film microstrip ring resonator due to superstrate. The Ag thick film microstrip ring resonator has been used to predict microwave dielectric constant of superstrate material. The composition dependent ring resonator changes its response like resonance frequency (higher transmission) which is used to predict the dielectric constant of superstrate material. The overlaid decreases the resonance frequency with rising peak output and it shows the composition dependent variations in microwave dielectric constant and it increases with increase in Ag content. The values of the bandwidth of Ag thick film ring resonator increases with Ag content and Q (quality factor) value of ring resonator decreases.

Ku band properties of Bi 2 O 3 thin film: Effect of oxidation temperature

This paper reports, the Ku band microwave permittivity, absorption and impedance of the bismuth oxide thin films deposited on alumina. Frequency dependant and oxidation temperature dependant effects are observed. The impedance is inductive in nature.