S. S. Dhesi

Electrical switching of an antiferromagnet

Manipulating a stubborn magnet Spintronics is an alternative to conventional electronics, based on using the electrons spin rather than its charge. Spintronic devices, such as magnetic memory, have traditionally used ferromagnetic materials to encode the 1s and 0s of the binary code. A weakness of this approach—that strong magnetic fields can erase the encoded information—could be avoided by using antiferromagnets instead of ferromagnets. But manipulating the magnetic ordering of antiferromagnets is tricky. Now, Wadley et al. have found a way (see the Perspective by Marrows). Running currents along specific directions in the thin films of the antiferromagnetic compound CuMnAs reoriented the magnetic domains in the material. Science, this issue p. 587; see also p. 558 Transport and optical measurements are used to demonstrate the switching of domains in the antiferromagnetic compound CuMnAs. [Also see Perspective by Marrows] Antiferromagnets are hard to control by external magnetic fields because of the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization. However, relativistic quantum mechanics allows for generating current-induced internal fields whose sign alternates with the periodicity of the antiferromagnetic lattice. Using these fields, which couple strongly to the antiferromagnetic order, we demonstrate room-temperature electrical switching between stable configurations in antiferromagnetic CuMnAs thin-film devices by applied current with magnitudes of order 106 ampere per square centimeter. Electrical writing is combined in our solid-state memory with electrical readout and the stored magnetic state is insensitive to and produces no external magnetic field perturbations, which illustrates the unique merits of antiferromagnets for spintronics.

Imaging Current-Induced Switching of Antiferromagnetic Domains in CuMnAs

The magnetic order in antiferromagnetic materials is hard to control with external magnetic fields. Using x-ray magnetic linear dichroism microscopy, we show that staggered effective fields generated by electrical current can induce modification of the antiferromagnetic domain structure in microdevices fabricated from a tetragonal CuMnAs thin film. A clear correlation between the average domain orientation and the anisotropy of the electrical resistance is demonstrated, with both showing reproducible switching in response to orthogonally applied current pulses. However, the behavior is inhomogeneous at the submicron level, highlighting the complex nature of the switching process in multidomain antiferromagnetic films.

Optical determination of the Néel vector in a CuMnAs thin-film antiferromagnet

Recent breakthroughs in electrical detection and manipulation of antiferromagnets have opened a new avenue in the research of non-volatile spintronic devices.1-10 Antiparallel spin sublattices in antiferromagnets, producing zero dipolar fields, lead to the insensitivity to magnetic field perturbations, multi-level stability, ultrafast spin dynamics and other favorable characteristics which may find utility in fields ranging from magnetic memories to optical signal processing. However, the absence of a net magnetic moment and the ultra-short magnetization dynamics timescales make antiferromagnets notoriously difficult to study by common magnetometers or magnetic resonance techniques. In this paper we demonstrate the experimental determination of the Neel vector in a thin film of antiferromagnetic CuMnAs9,10 which is the prominent material used in the first realization of antiferromagnetic memory chips.10 We employ a femtosecond pump-probe magneto-optical experiment based on magnetic linear dichroism. This table-top optical method is considerably more accessible than the traditionally employed large scale facility techniques like neutron diffraction11 and Xray magnetic dichroism measurements.12-14 This optical technique allows an unambiguous direct determination of the Neel vector orientation in thin antiferromagnetic films utilized in devices directly from measured data without fitting to a theoretical model.

Exchange Bias in Fe@Cr Core-Shell Nanoparticles

We have used X-ray magnetic circular dichroism and magnetometry to study isolated Fe@Cr core-shell nanoparticles with an Fe core diameter of 2.7 nm (850 atoms) and a Cr shell thickness varying between 1 and 2 monolayers. The addition of Cr shells significantly reduces the spin moment but does not change the orbital moment. At least two Cr atomic layers are required to stabilize a ferromagnetic/antiferromagnetic interface and generate the associated exchange bias and increase in coercivity.

Antiferromagnetic structure in tetragonal CuMnAs thin films

Tetragonal CuMnAs is an antiferromagnetic material with favourable properties for applications in spintronics. Using a combination of neutron diffraction and x-ray magnetic linear dichroism, we determine the spin axis and magnetic structure in tetragonal CuMnAs, and reveal the presence of an interfacial uniaxial magnetic anisotropy. From the temperature-dependence of the neutron diffraction intensities, the Néel temperature is shown to be (480 ± 5) K. Ab initio calculations indicate a weak anisotropy in the (ab) plane for bulk crystals, with a large anisotropy energy barrier between in-plane and perpendicular-to-plane directions.

Induced magnetic moment of Eu3+ ions in GaN

Magnetic semiconductors with coupled magnetic and electronic properties are of high technological and fundamental importance. Rare-earth elements can be used to introduce magnetic moments associated with the uncompensated spin of 4f-electrons into the semiconductor hosts. The luminescence produced by rare-earth doped semiconductors also attracts considerable interest due to the possibility of electrical excitation of characteristic sharp emission lines from intra 4f-shell transitions. Recently, electroluminescence of Eu-doped GaN in current-injection mode was demonstrated in p-n junction diode structures grown by organometallic vapour phase epitaxy. Unlike most other trivalent rare-earth ions, Eu3+ ions possess no magnetic moment in the ground state. Here we report the detection of an induced magnetic moment of Eu3+ ions in GaN which is associated with the 7F2 final state of 5D0→7F2 optical transitions emitting at 622 nm. The prospect of controlling magnetic moments electrically or optically will lead to the development of novel magneto-optic devices.

Electrical control of magnetic reversal processes in magnetostrictive structures

We demonstrate the interplay between strain-induced, shape-induced, and magnetocrystalline anisotropy energies in a micron scale magnetostrictive device coupled to a piezoelectric transducer. Varying the voltage on the transducer tunes the shape of the magnetic hysteresis loops and the magnetic reversal processes, which involve a single 180° or 90° domain wall, or proceed via the formation of a regular flux closure domain pattern. The flux closure domains can be suppressed or enhanced in the absence of an external magnetic field by sweeping the applied voltage. The functionalities we demonstrate may find applications in magnetic schemes for information storage and logical processing.

Magnetic imaging by x-ray holography using extended references.

We demonstrate magnetic lensless imaging by Fourier transform holography using extended references. A narrow slit milled through an opaque gold mask is used as a holographic reference and magnetic contrast is obtained by x-ray magnetic circular dichroism. We present images of magnetic domains in a Co/Pt multilayer thin film with perpendicular magnetic anisotropy. This technique holds advantages over standard Fourier transform holography, where small holes are used to define the reference beam. An increased intensity through the extended reference reduces the counting time to record the farfield diffraction pattern. Additionally it was found that manufacturing narrow slits is less technologically demanding than the same procedure for holes. We achieve a spatial resolution of ∼30 nm, which was found to be limited by the sample period of the chosen experimental setup.

Strain dependent defect mediated ferromagnetism in Mn-doped and undoped ZnO thin films

The structural and magnetic properties of pulsed laser deposited zinc oxide thin films have been investigated. Room temperature ferromagnetism is present in undoped as well as Mn-doped films. The saturation magnetization of the thin films reveals a dependence on both the composition and the out of plane lattice parameter. X-ray magnetic circular dichroism down to 2 K reveals a purely paramagnetic contribution from the Mn in Mn:ZnO films. We conclude that the observed ferromagnetism arises entirely from intrinsic defects in the ZnO which can be varied by manipulation of the lattice parameter.

RASOR: An advanced instrument for soft x-ray reflectivity and diffraction

We report the design and construction of a novel soft x-ray diffractometer installed at Diamond Light Source. The beamline endstation RASOR is constructed for general users and designed primarily for the study of single crystal diffraction and thin film reflectivity. The instrument is comprised of a limited three circle (theta, 2theta, and chi) diffractometer with an additional removable rotation (phi) stage. It is equipped with a liquid helium cryostat, and post-scatter polarization analysis. Motorized motions are provided for the precise positioning of the sample onto the diffractometer center of rotation, and for positioning the center of rotation onto the x-ray beam. The functions of the instrument have been tested at Diamond Light Source, and initial test measurements are provided, demonstrating the potential of the instrument.