S. S. Gorbatov

Spatial oscillations of the electric field and the charge density in a silicon p-i-n diode

The distributions of the electrical field and the charge density in a p-i-n diode under forward bias were calculated numerically and studied experimentally with the use of a near-field microwave microscope. The crucial importance of including the dependence of the carrier diffusion coefficient on the electric field into the description of processes taking place in p-i-n diodes was demonstrated. The numerical results agree qualitatively with the experimental ones.

Magnetic frequency tuning of the microwave Gunn diode oscillator

It has been found experimentally that the oscillation frequency of a Gunn diode placed in the low-dimensional resonance system “metal pin-closely set short-circuiter” can be effectively controlled by magnetic field applied in the normal direction with respect to the waveguide wide wall.

A Near-Field Microwave Microscope for Determining Anisotropic Properties of Dielectric Materials

A near-field microwave microscope based on the “inductive diaphragm-capacitive diaphragm” resonance system for contactless local determination of anisotropic properties of dielectric materials is presented. It is shown that the dielectric properties of microwave ceramic materials used as substrates for microwave circuits can be measured in directions parallel and normal to the working surface.

Oscillation of spatial distribution of electric field and carrier density in p-i-n semiconductor structure

A numerical calculation of the distribution of the electric field and the carrier concentration in the p-i-n diode under forward bias, as well as experimental studies of these characteristics using near-field microwave microscope have been made. The principle importance of taking into account the dependence of diffusion coefficient of the charge carriers on the electric field in the description of the processes occurring in the p-i-n diodes has been shown. The numerical results are in qualitative agreement with experiment.

Measurement of the mobility and concentration of charge carriers in a Gunn gallium-arsenide diode using a near-field microwave microscope

The results of local contactless measurement of the dependence of conductivity in a Gunn diode on the external electrical bias are presented. The technique of local determination of the charge-carrier concentration and mobility in a commercially produced chip Gunn diode for various values of the supply voltage is proposed.

Investigation of the charge carrier concentration and electric field distribution in gallium arsenide Gunn diode

Numerical calculation of the stationary distribution of electric field and charge carrier concentration in Gunn diode has been performed for the one-dimensional case. In addition, experimental investigations of the specified characteristics were also carried out by using a near-field microwave microscope. Taking into account the dependence of the majority carrier diffusion coefficient on the electric field intensity was shown to be of crucial importance in describing the processes occurring in Gunn diodes. The numerical results were in good agreement with the results of conducted experiment.

A high-Q low-dimensional resonator with electrically tunable frequency

A low-dimensional high-Q resonator has been proposed and its frequency-response characteristics have been investigated. The specified resonator features the frequency-response characteristics that are electrically tunable by using a semiconductor diode with variable capacitance.

Frequency Characteristics of Lowdimensional Wave Propagation System of "Capacity Diaphragm— Short-Circuiting Piston" Type

Using variation method, we developed an algorithm for calculation a resistance matrix of diaphragm — near located short-circuiting piston system. System frequency dependencies on dimensions, position of diaphragm aperture and a distance between diaphragm and piston were calculated. Obtained experimental results has good correspondence with theoretical ones.

Resonances in the "post with gap—adjacent piston" waveguide system

The electrodynamic system composed of a metal post with a gap and a short-circuiting piston located nearby is investigated theoretically and experimentally. It is shown that such a system can be used successfully in designing small-size microwave devices, whose characteristics are controlled by magnetic field.

A rectangular resonator with its characteristics controlled by magnetic field

The paper shows that in microwave systems made of nonmagnetic materials, in which the conditions for resonance are established, we can observe a strong dependence of their electrodynamic characteristics on the applied magnetic field. The dependence arises from the Hall component of the microwave current flowing in the internal semiconductor insertions and in metal walls of the resonator.