S. S. Mikhrin

The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers

Temperature invariant output slope efficiency and threshold current (T0=∞) in the temperature range of 5–75 °C have been measured for 1.3 μm p-doped self-organized quantum dot lasers. Similar undoped quantum dot lasers exhibit T0=69K in the same temperature range. A self-consistent model has been employed to calculate the various radiative and nonradiative current components in p-doped and undoped lasers and to analyze the measured data. It is observed that Auger recombination in the dots plays an important role in determining the threshold current of the p-doped lasers.

High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers

We report on GaAs-based broad area (100 µm) 1.3 µm quantum dot (QD) lasers with high CW output power (5 W) and wall-plug efficiency (56%). The reliability of the devices has been demonstrated beyond 3000 h of CW operation at 0.9 W and 40 °C heat sink temperature with 2% degradation in performance. P-doped QD lasers with a temperature-insensitive threshold current (T0 > 650 K) and differential efficiency (T1 = infinity) up to 80 °C have been realized.

Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate

Continuous-wave operation near 1.3 /spl mu/m or a diode laser based on self-organized quantum dots (QDs) on a GaAs substrate is demonstrated. Multiple stacking of InAs QD planes covered by thin InGaAs layers allows us to prevent gain saturation and achieve long-wavelength lasing with low threshold current density (90-105 A/cm/sup 2/) and high output power (2.7 W) at 17/spl deg/C heatsink temperature. It is thus confirmed that QD lasers of this kind are potential candidates to substitute InP-based lasers in optical fiber systems.

Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates

An InAs quantum dot (QD) array covered by a thin InGaAs layer was used as the active region of diode lasers grown by molecular beam epitaxy on GaAs substrates. The wavelength of the ground-state transition in such heterostructures is in the 1.3 μm range. In the laser based on the single layer of QDs, lasing proceeds via the excited states due to insufficient gain of the ground level. Stacking of three QD planes prevents gain saturation and results in a low threshold (85 A/cm2 in broad-area 1.9-mm-long stripe) long-wavelength (1.25 μm) lasing at room temperature via the QD ground state with relatively high differential efficiency (>50%).

Quantum dot laser with 75 nm broad spectrum of emission

We report on a quantum dot laser having an emission spectrum as broad as 74.9 nm at 25 degrees C in the 1.2-1.28 wavelength interval with a total pulsed output power of 750 mW in single lateral mode regime and the average spectral power density of >10 mW/nm. A significant overlap and approximate equalization of the ground-state and the excited-state emission bands in the lasers spectrum is achieved by means of intentional inhomogeneous broadening of the quantum dot energy levels.

Single-mode submonolayer quantum-dot vertical-cavity surface-emitting lasers with high modulation bandwidth

Single-mode vertical-cavity surface-emitting lasers based on dense arrays of stacked submonolayer grown InGaAs quantum dots, emitting near 980nm, demonstrate a modulation bandwidth of 10.5GHz. A low threshold current of 170μA, high differential efficiency of 0.53W∕A, and high modulation current efficiency factor of 14GHz∕mA are realized from a 1μm oxide aperture single-mode device with a side mode suppression ratio of >40dB and peak output power of >1mW. The lasers are also suitable for high temperature operation.

Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation

Experimental and theoretical study was made of injection lasers based on InAs/GaAs quantum dots (QDs) formed by the activated alloy phase separation and emitting at about 1.3 /spl mu/m. Electroluminescence and gain spectra were investigated. The maximum modal gain is measured experimentally using two different techniques. Threshold current densities as low as 22 A cm/sup -2/ per QD sheet were achieved. A step-like switch from ground- to excited-state transition lasing was observed with an increasing cavity loss. The characteristic temperatures for a sample with four cleaved sides and a 2-mm long stripe device at 300 K were 140 and 83 K, respectively. Single lateral-mode continuous-wave (CW) operation with the maximum output power of 210 mW was realized. Threshold characteristics of a laser were simulated taking into account radiative recombination in QDs, the wetting layer, and the optical confinement layer. The dependence of the threshold current density on the cavity length was shown to be extremely sensitive to the QD-array parameters determining the maximum gain for ground- and excited-state transitions and to the waveguide design. Our analysis reveals that nonradiative recombination channels may play an important role in the laser operation.

High performance narrow stripe quantum-dot lasers with etched waveguide

1.3 µm range narrow stripe (8 µm) quantum-dot (QD) lasers processed in deep-mesa geometry, etched through the waveguide, demonstrate high external differential efficiency (50%) and a low threshold current density (<130 A cm−2) superior to the shallow mesa devices. This opens a new way for cost-efficient fabrication of distributed feedback and photonic crystal QD devices.

20 Gb/s 85

980 nm vertical-cavity surface-emitting lasers based on submonolayer growth of quantum dots show clearly open eyes and operate error free with bit error rates better than 10 at 25 and 85degC for 20 Gb/s without current adjustment. The peak differential efficiency only reduces from 0.71 to 0.61 W/A between 25 and 85degC; the maximum output power at 25degC is above 10 mW.

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High-channel-count WDM will eventually be used for short reach optical interconnects since it maximizes link bandwidth and efficiency. An impediment to adoption is the fact that each WDM wavelength currently requires its own DFB laser. The alternative is a single, multi-wavelength laser, but noise, size and/or expense make existing options impractical. In contrast, a new low-noise, diode comb laser based on InAs/GaAs quantum dots provides a practical and timely alternative, albeit in the O-band. Samples are being evaluated in short reach WDM development systems. Tests show this type of Fabry-Perot laser permits >10 Gb/s error-free modulation of 10 to over 50 separate channels, as well as potential for 1.25 Gb/s direct modulation. The paper describes comb laser requirements, noise measurements for external and direct modulation, O-band issues, transmitter photonic circuitry and components, future CMP applications, and optical couplers that may help drive down packaging costs to below a dollar.